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Molecular Beam Epitaxy

Author Yoshiji Horikoshi , Hajime Asahi
Release Date: 2019/04/01
ISBN: 9781119355014
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Book Description

Covers both the fundamentals and the state-of-the-art technology used for MBE

Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications.

Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more.

  • Includes chapters on the fundamentals of MBE
  • Covers new challenging researches in MBE and new technologies 
  • Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners
  • Part of the Materials for Electronic and Optoelectronic Applications series

Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.

Table of Contents

  1. Cover
  2. List of Contributors
  3. Series Preface
    1. Wiley Series in Materials for Electronic and Optoelectronic Applications
  4. Preface
  5. Part I: Fundamentals of MBE
    1. 1 History of MBE
      1. 1.1 Introduction
      2. 1.2 The MBE Process
      3. 1.3 Controlled n and p Doping
      4. 1.4 Modified Growth Procedures
      5. 1.5 Gas‐Source MBE
      6. 1.6 Low‐Dimensional Structures
      7. 1.7 III–V Nitrides, Phosphides, Antimonides and Bismides and Other Materials
      8. 1.8 Early MBE‐Grown Devices
      9. 1.9 Summary
      10. Acknowledgments
      11. References
    2. 2 General Description of MBE
      1. 2.1 Introduction
      2. 2.2 High‐Vacuum Chamber System
      3. 2.3 Atomic and Molecular Beam Sources
      4. 2.4 Measurement of MBE Growth Parameters
      5. 2.5 Surface Characterization Tools for MBE Growth
      6. 2.6 Summary
      7. Acknowledgments
      8. References
    3. 3 Migration‐Enhanced Epitaxy and its Application
      1. 3.1 Introduction
      2. 3.2 Toward Atomically Flat Surfaces in MBE
      3. 3.3 Principle of MEE
      4. 3.4 Growth of GaAs by MEE
      5. 3.5 Incommensurate Deposition and Migration of Ga Atoms
      6. 3.6 Application of MEE Deposition Sequence to Surface Research
      7. 3.7 Application of MEE to Selective Area Epitaxy
      8. 3.8 Summary
      9. Acknowledgments
      10. References
    4. 4 Nanostructure Formation Process of MBE
      1. 4.1 Introduction
      2. 4.2 Growth of Quantum Wells
      3. 4.3 Growth of Quantum Wires and Nanowires
      4. 4.4 Growth of Quantum Dots
      5. 4.5 Conclusion
      6. References
    5. 5 Ammonia Molecular Beam Epitaxy of III‐Nitrides
      1. 5.1 Introduction
      2. 5.2 III‐Nitride Fundamentals
      3. 5.3 Ammonia Molecular Beam Epitaxy
      4. 5.4 Ternary Nitride Alloys and Doping
      5. 5.5 Conclusions
      6. References
    6. 6 Mechanism of Selective Area Growth by MBE
      1. 6.1 Background
      2. 6.2 Growth Parameters for Ti Mask SAG
      3. 6.3 Initial Growth of Nanocolumns
      4. 6.4 Nitrogen Flow Rate Dependence of SAG
      5. 6.5 Diffusion Length of Ga Adatoms
      6. 6.6 Fine Control of Nanocolumn Arrays by SAG
      7. 6.7 Controlled Columnar Crystals from Micrometer to Nanometer Size
      8. 6.8 Nanotemplate SAG of AlGaN Nanocolumns
      9. 6.9 Conclusions and Outlook
      10. References
  6. Part II: MBE Technology for Electronic Devices Application
    1. 7 MBE of III‐Nitride Semiconductors for Electronic Devices
      1. 7.1 Introduction
      2. 7.2 MBE Growth Techniques
      3. 7.3 AlGaN/GaN High Electron Mobility Transistors on SiC Substrate
      4. 7.4 AlGaN/GaN High Electron Mobility Transistors on Si Substrate
      5. 7.5 HEMTs with Thin Barrier Layers for High‐Frequency Applications
      6. 7.6 Vertical Devices
      7. References
    2. 8 Molecular Beam Epitaxy for Steep Switching Tunnel FETs
      1. 8.1 Introduction
      2. 8.2 TFET Working Principle
      3. 8.3 III–V Heterostructure for TFETs
      4. 8.4 MBE for Beyond CMOS Technologies
      5. 8.5 Doping
      6. 8.6 Tunneling Interface Engineering
      7. 8.7 MBE for III–V TFET Integration
      8. 8.8 Conclusions and Perspectives
      9. Acknowledgments
      10. References
  7. Part III: MBE for Optoelectronic Devices
    1. 9 Applications of III–V Semiconductor Quantum Dots in Optoelectronic Devices
      1. 9.1 Introduction: Self‐assembled Quantum Dots
      2. 9.2 Lasers Based on InAs Quantum Dots Grown on GaAs Substrates
      3. 9.3 InAs QD Optical Device Operating at Telecom Band (1.55 µm)
      4. 9.4 Recent Progress in QD Lasers
      5. 9.5 Summary
      6. References
    2. 10 Applications of III–V Semiconductors for Mid‐infrared Lasers
      1. 10.1 Introduction
      2. 10.2 GaSb‐Based Lasers
      3. 10.3 InP‐Based Lasers
      4. 10.4 InAs‐Based Lasers
      5. 10.5 Conclusion
      6. References
    3. 11 Molecular Beam Epitaxial Growth of Terahertz Quantum Cascade Lasers
      1. 11.1 Introduction
      2. 11.2 Epitaxial Challenges
      3. References
    4. 12 MBE of III‐Nitride Heterostructures for Optoelectronic Devices
      1. 12.1 Introduction
      2. 12.2 Low‐Temperature Growth of Nitrides by PAMBE
      3. 12.3 Applications of PAMBE in Growth of Nitride Laser Diodes
      4. 12.4 New Concepts of LDs with Tunnel Junctions
      5. 12.5 Summary
      6. Acknowledgments
      7. References
    5. 13 III‐Nitride Quantum Dots for Optoelectronic Devices
      1. 13.1 Introduction
      2. 13.2 Molecular Beam Epitaxy of InGaN/GaN Self‐organized Quantum Dots
      3. 13.3 Quantum Dot Wavelength Converter White Light‐Emitting Diode
      4. 13.4 Quantum Dot Lasers
      5. 13.5 Summary and Future Prospects
      6. References
    6. 14 Molecular‐Beam Epitaxy of Antimonides for Optoelectronic Devices
      1. 14.1 Introduction
      2. 14.2 Epitaxy of Antimonides: A Brief Historical Survey
      3. 14.3 Molecular‐Beam Epitaxy of Antimonide
      4. 14.4 Outlook
      5. Acknowledgments
      6. References
    7. 15 III–V Semiconductors for Infrared Detectors
      1. 15.1 Introduction
      2. 15.2 InAsSb XBn Detectors
      3. 15.3 T2SL XBp Detectors
      4. 15.4 Conclusion
      5. Acknowledgments
      6. References
    8. 16 MBE of III–V Semiconductors for Solar Cells
      1. 16.1 Introduction
      2. 16.2 InGaP Solar Cells
      3. 16.3 InGaAsP Solar Cells Lattice‐Matched to GaAs
      4. 16.4 InGaAsP Solar Cells Lattice‐Matched to InP
      5. 16.5 Growth of Tunnel Junctions for Multi‐Junction Solar Cells
      6. 16.6 Summary
      7. References
  8. Part IV: Magnetic Semiconductors and Spintronics Devices
    1. 17 III–V‐Based Magnetic Semiconductors and Spintronics Devices
      1. 17.1 Introduction
      2. 17.2 Hole‐Mediated Ferromagnetism
      3. 17.3 Molecular Beam Epitaxy and Materials Characterization
      4. 17.4 Studies in View of Spintronics Applications
      5. 17.5 Conclusions and Prospects
      6. Acknowledgments
      7. References
    2. 18 III‐Nitride Dilute Magnetic Semiconductors
      1. 18.1 Introduction
      2. 18.2 Transition‐Metal‐Doped GaN
      3. 18.3 Rare‐Earth‐Doped III‐Nitrides
      4. 18.4 Device Applications
      5. 18.5 Summary
      6. References
    3. 19 MBE Growth, Magnetic and Magneto‐optical Properties of II–VI DMSs
      1. 19.1 II–VI DMSs Doped with Mn
      2. 19.2 II–VI DMSs Doped with Cr and Fe
      3. 19.3 ZnO‐Based DMSs
      4. References
    4. 20 Ferromagnet/Semiconductor Heterostructures and Nanostructures Grown by Molecular Beam Epitaxy
      1. 20.1 Introduction
      2. 20.2 MnAs on GaAs(001) and Si(001) Substrates
      3. 20.3 GaAs:MnAs Granular Materials: Magnetoresistive Effects and Related Devices
      4. 20.4 Summary
      5. Acknowledgments
      6. References
    5. 21 MBE Growth of Ge‐Based Diluted Magnetic Semiconductors
      1. 21.1 Introduction
      2. 21.2 MBE Growth of MnxGe1−x Thin Film and Nanostructures
      3. 21.3 Magnetic Properties of MnxGe1−x Thin Films and Nanostructures
      4. 21.4 Electric‐Field‐Controlled Ferromagnetism and Magnetoresistance
      5. 21.5 Conclusion
      6. Acknowledgments
      7. References
  9. Part V: Challenge of MBE to New Materials and New Researches
    1. 22 Molecular Beam Epitaxial Growth of Topological Insulators
      1. 22.1 Introduction
      2. 22.2 MBE Growth of Bi2Se3 Family Three‐Dimensional Topological Insulators Family Three‐Dimensional Topological Insulators
      3. 22.3 Defects in MBE‐Grown Bi2Se3 Family TI Films
      4. 22.4 Band Structure Engineering in Ternary Bi2Se3 Family TIs
      5. 22.5 Magnetically Doped Bi2Se3 Family TIs
      6. 22.6 MBE Growth of 2D TI Materials
      7. 22.7 Summary
      8. Reference
    2. 23 Applications of Bismuth‐Containing III–V Semiconductors in Devices
      1. 23.1 Introduction
      2. 23.2 Growth of GaAsBi
      3. 23.3 Properties of GaAsBi
      4. 23.4 Applications of GaAsBi
      5. 23.5 Applications of Other Bi‐Containing Semiconductors
      6. 23.6 Summary
      7. References
    3. 24 MBE Growth of Graphene
      1. 24.1 Introduction
      2. 24.2 MBE of Graphene on Metals
      3. 24.3 MBE of Graphene on Semiconductors
      4. 24.4 MBE of Graphene on Oxides and Other Dielectrics
      5. 24.5 Conclusions
      6. Acknowledgments
      7. References
    4. 25 MBE Growth and Device Applications of Ga2O3
      1. 25.1 Introduction
      2. 25.2 Physical Properties of Ga2O3
      3. 25.3 Ga2O3 Electronic Device Applications
      4. 25.4 Melt‐Grown Bulk Single Crystals
      5. 25.5 Ga2O3 MBE Growth
      6. 25.6 Transistor Applications
      7. 25.7 Summary
      8. References
    5. 26 Molecular Beam Epitaxy for Oxide Electronics
      1. 26.1 Introduction
      2. 26.2 Structure–Property Relationship in Perovskite Oxides
      3. 26.3 Oxide Molecular Beam Epitaxy
      4. 26.4 Recent Developments in Oxide MBE
      5. 26.5 Outlook
      6. 26.6 Summary
      7. Acknowledgments
      8. References
    6. 27 In‐situ STM Study of MBE Growth Process
      1. 27.1 Introduction
      2. 27.2 The Advantages of In‐situ STM Observation for Understanding Growth Mechanisms
      3. 27.3 In‐situ STM Observation of InAs Growth on GaAs(001) by STMBE System
      4. 27.4 In‐situ STM Observation of Various Growths and Treatments on GaAs Surfaces by STMBE System
      5. 27.5 Conclusion
      6. References
    7. 28 Heterovalent Semiconductor Structures and their Device Applications
      1. 28.1 Introduction
      2. 28.2 MBE Growth of Heterovalent Structures
      3. 28.3 ZnTe and GaSb/ZnTe Heterovalent Distributed Bragg Reflector Structures Grown on GaSb
      4. 28.4 CdTe/MgCdTe Structure and Heterovalent Devices Grown on InSb Substrates
      5. 28.5 Single‐Crystal CdTe/MgxCd1−xTe Solar Cells
      6. 28.6 CdTe/InSb Two‐Color Photodetectors
      7. Acknowledgments
      8. References
  10. Index
  11. End User License Agreement
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