200 Computer Architecture and Organization
7.2.1 Read Only Memory (ROM)
The non-volatile type memory devices are generally categorized by the method in which it may be
implemented to erase these devices. As they must retain the information within them even if the power
is switched off, a special programming procedure is necessary to write data in these memories and also
a special wiping procedure to erase the data within it. Common types of read-only memories are ROM,
PROM, EPROM, EEPROM and FLASH.
ROM is the type where erasing is not possible at all. They are factory fabricated, which means the
program that they have to retain, forms the basic structure of their silicon wafer. This makes these ROM
very cheap. However, once they are fabricated, no change is possible, and generally to be produced in
bulk, some extra time is needed for fabrication. Generally, they are ideal for a nished and well-tested
product – ready for mass production.
PROM or Programmable Read-Only Memory allows only one time programming (OTP) after which
the device holds the data forever, without giving any chance to erase it. However, they offer more ex-
ibility than the mask-programmable factory-prepared ROM and, hence, more expensive than ROMs.
EPROM or Erasable Programmable Read Only Memory allows erasure as well as reprogramming
facilities, suitable for any prototype development stage. They are more expensive than PROM and
are to be completely erased by exposing to UV radiation for more than 15 minutes. For this erasure, a
small transplant quartz window is provided at the top of its package, by which EPROMs may be easily
distinguished from other ICs.
EEPROM or Electrically Erasable Programmable Read Only Memory (also designated as E
2
PROM
in some cases) does not require UV exposure for erasure and may be electrically erased. The time
required to erase is in milliseconds, much less than EPROMs, making it more suitable for software
development and testing. As both programming and erasure are possible electrically, by generally using
5V DC, they are sometimes referred as a special variety of read/write memory.
FLASH is very much similar to EEPROM, with some marginal difference. EEPROM is byte-wise
erasable, whereas ash is not. Otherwise, they function in almost an identical way.
7.2.2 Read/Write Memory (RAM)
Memory devices described above are non-volatile type, i.e., even if the power is switched off, they
would retain their contents (data or information). This is not so for the following three types of memory
devices, which are used for read-write purpose. In this case, if the power is switched off, they are unable
to retain information within them.
DRAM or Dynamic RAM is the most widely adopted variety of read/write memory in computer sys-
tems. As only one transistor or a FET along with a small capacitor is enough to retain one bit of infor-
mation, a large number of storage cells may be accommodated within these memories. However, data
stored as electrical charge within its capacitors tend to drain out and as a method of preservation, these
cells must be refreshed periodically. Due to these demands of its inherent structure, DRAMs are com-
paratively slower devices. These DRAMs are used in the main memory of the majority of computer
systems. Refer Section 7.5.1 for more information about DRAM.
SRAM or Static RAM offers fastest speed for communication out of all these three read/write memory
types. However, they are more expensive as more number of transistors is necessary to retain each bit
M07_GHOS1557_01_SE_C07.indd 200M07_GHOS1557_01_SE_C07.indd 200 4/29/11 5:12 PM4/29/11 5:12 PM