~ refers the main‐entry of the corresponding sub‐entry

a

• AC resistance, see dynamic resistance
• AC (small‐signal) analysis 6, 143, 146–156
• AC Sweep analysis (in PSpice) 812–814
• active filter 502–511
  • first‐order ~ 485–495
  • second‐order ~ 495–502
  • ~ realization 576–585
• analog filter design 523–533
• angular wave number, see propagation constant
• a‐parameters, see parameters
• astable 492
• ATR 604
• attenuation constant 602
• attenuation ratio, see ATR
• available gain, see power gain

b

• bandpass filter, see BPF
• bandstop filter, see BSF
• bandwidth 535, 538, 540, 535
• base‐spreading resistance 142
• bias point analysis (in PSpice) 806
• binomial (multi‐section) QWT 633–634
• bipolar junction transistor, see BJT
• bistable multivibrator 482
• BJT (bipolar junction transistor) 105–302
  • ~ amplifier 169–209
    • multi‐stage (cascaded) ~ 199–209, 290–291
  • analysis of ~ circuits 143–156
  • ~ current mirror, see current mirror
  • design of ~ amplifier 232–242
  • Ebers‐Moll representation of ~ 106–109
  • ~ inverter/switch, see inverter
  • operation modes (regions) of ~ 109
  • parameters of ~ 109–110, 141
  • ~ used as a diode, see diode
• b‐parameters, see parameters
• BPF (bandpass filter) 505, 526, 537–541
• breakdown region 306–313
• breakdown voltage, see Zener breakdown voltage
• BSF (bandstop filter) 507–508, 541–545
  • twin‐T high Q ~ 507
• Butterworth filter 525, 527, 531

c

• Capture CIS Window 791
• cascade:
  • ~ current mirror, see current mirror
  • ~ form 526
  • ~ interconnection, see two‐port
• cascaded BJT amplifier 187–198
• cascaded FET amplifier 384–398
• cascode:
  • ~ (CE‐CB) amplifier 199–202, 297–298
  • ~ (CS‐CG) amplifier 392–398
• CB (common‐base) amplifier 111–113, 180–187
• CB (common‐base) configuration 111–113
• CC (common‐collector) amplifier 173–180, 240, 241
  • design of 238–243
• CD (common‐drain) amplifier 366–369, 407, 415, 417
  • design of ~ 405–409
  • ~ frequency response 418–419
• CE (common‐emitter) amplifier 169–173, 187
  • design of ~ 233, 294–295
• CE (common‐emitter) configuration 113–115
• center frequency 537, 540
• CG (common‐gate) amplifier 370–373, 421
  • ~ frequency response 421–424
• channel length modulation, see CLM
• channel modulation voltage 307
• characteristic impedance 601–602
• Chebyshev filter 529–531
• Chebyshev (multi‐section) QWT 633–634
• clamper 51–53, 92
• clipper 51–53
• CLM (channel length modulation)
  • ~ parameter 305, 313, 316
• closed‐loop gain 472, 474
• CMOS 350–355
  • ~ differential pair, see differential pair
  • ~ inverter, see inverter
  • ~ logic circuits 359–360
• color code 785
• combiner, see linear combiner
• common‐base amplifier, see CB amplifier
• common‐collector amplifier, see CC amplifier
• common‐drain amplifier, see CD amplifier
• common‐emitter amplifier, see CE amplifier
• common‐gate amplifier, see CG amplifier
• common‐source amplifier, see CS amplifier
• complementary:
  • ~ BJT 276
  • ~ MOSFET (CMOS) 350, 351
• complex exponential form (of Fourier series) 19
• complex number operations 773
• compliance voltage 331
• conduction constant 314, 317
• conduction parameter 305
• constant‐current region 306, 316
• conversion:
  • ~ among two‐port parameters, see two‐port
  • a‐to‐s parameter ~ 712
  • h‐to‐s parameter ~ 755
  • parallel‐to‐serial ~ 546
  • serial‐to‐parallel ~ 546
  • s‐to‐a parameter ~ 713
  • s‐to‐h parameter ~ 755
  • s‐to‐z parameter ~ 754
  • z‐to‐s parameter ~ 754
• CS (common‐source) amplifier 362–366, 373–380
  • design of ~ 398–406
  • ~ with FET load 374, 376–380
  • ~ frequency response 414–415
• current gain 175, 701
• current magnification ratio 540
• current mirror:
  • BJT ~ 156–160, 279–280
  • cascode ~ 434–437
  • double Wilson ~ 334–337
  • (MOS)FET ~ 328–337
• Cursor (in PSpice) 801–802
• curve fitting 71–72
• cutoff frequency 535
• cutoff (operation) mode 110
• cutoff region 306, 316–321
• CVD (constant voltage drop) model 49–50

d

• Darlington amplifier 199, 203–207
• DC (direct current):
  • ~ (large‐signal) analysis 7, 143–144
  • ~ path to ground 797
  • ~ resistance, see static resistance
  • ~ Sweep analysis (in PSpice) 807
• deadband characteristic 482
• depletion capacitance, see junction capacitance
• destabilization effect 482
• differential equation 777
• differential pair:
  • CMOS ~ 440–444
  • emitter‐coupled ~, see emitter‐coupled pair
  • source‐coupled ~, see source‐coupled pair
• differentiator 486–487
• diffusion capacitance 45, 142
• diode 43–46
  • analysis of ~ circuit 46–74
  • BJT used as a ~ 156
  • large‐signal ~ model 44
  • ~ law 43
  • leakage (reverse saturation) current 44
  • PSpice model for ~ 67
  • PWL model of ~ 44
  • Shockley ~ equation 68
  • small‐signal ~ model 44–46
  • small‐signal analysis of ~ circuit 67–74
• diode‐connected 156, 328
• distortion factor, see THD
• double‐stub impedance matching, see impedance matching
• DTL NAND 209–215
• dummy resistor 797
• dynamic resistance 5–6

e

• Early voltage 108, 307
• Ebers‐Moll representation of BJT, see BJT
• ECL (emitter‐coupled logic) 229–232, 282–286
• effective value 35
• elliptic filter 530–531
• emission coefficient 44, 45
• emitter follower, see CC amplifier
• emitter‐coupled:
  • ~ (differential) pair 165–168
  • ~ logic, see ECL
• externally equivalent 10

f

• fan‐in 162
• fan‐out 162, 212–213, 222, 225
• FET (field effect transistor) 303–360
  • ~ amplifier 360–399
    • design of ~ 399–411
    • ~ frequency response 409–424
    • multistage (cascaded) ~ 380–399
  • ~ current mirror, see current mirror
  • depletion n‐channel ~ 320
  • enhancement n‐channel ~ 320
  • ~ inverter, see inverter
  • junction ~, see JFET
  • operation modes of ~ 304–305, 316
• field effect transistor, see FET
• filter 523–545
  • bandpass ~, see BPF
  • bandstop ~, see BSF
  • highpass ~, see HPF
  • lowpass ~, see LPF
• 555‐timer, see timer
• forward‐active (operation) mode 110
• forward‐bias mode 45
• forward (incident) voltage/current 603
• Fourier analysis using PSpice 817–819
• Fourier series 18–35
  • circuit analysis using ~ 29–35
  • complex exponential form of ~ 19
  • magnitude‐and‐phase form of ~ 19
  • ~ representation 19–20
  • sine‐and‐phase form of ~ 19
  • trigonometric form of ~ 19
• frequency scaling 550
• frequency transformation 552–553
• full adder (PSpice simulation) 811
• full‐wave rectified cosine wave 25, 39–42
• full‐wave rectifier, see rectifier
• fundamental frequency 18
• fundamental period 18

g

• gain circle, see power gain circle
• geometry ratio 352
• g‐parameters, see parameters
• h
• half‐power frequency, see 3dB frequency
• half‐wave rectified cosine wave 26
• half‐wave rectifier, see rectifier
• harmonic 19
• highpass filter, see HPF
• Howland circuit 512
• h‐parameters, see parameters
• HPF (highpass filter) 502, 504, 505, 535–536
• hysteresis characteristic 482

i

• ideality factor 44, 45
• ideal transformer:
  • a‐parameters of ~ 681–682
  • s‐parameters of ~ 722
• imaginary short, see virtual short
• impedance matcher:
  • L‐type ~ 561–565
  • П(pi)‐type ~ 565–571
  • T‐type ~ 565–570
  • tapped‐C ~ 571–575
• impedance matching 601–676, 734, 740
  • double‐stub ~ 626–631, 667
  • single‐stub ~ 618–626
  • single‐stub series ~ 664–665
  • single‐stub shunt ~ 662–663
  • ~ using serial line 659–660
  • ~ withLC ladder 653–658
  • ~ with lumped elements 646–648
• impedance transformer 606
  • L‐type ~ 611–616, 646–648
  • N‐section ~ 632
  • П‐type ~ 650–658
  • T‐type ~ 648–650, 674
• incident voltage/current, see forward voltage/current
• incremental resistance 6, 142, 307
• initial transient bias point 825–829
• insertion loss (IL) 549, 559
• integrator 486
  • Miller ~ 486
  • RC ~, see Miller integrator
• inverse Laplace transform 761–765
• inverter
  • BJT ~/switch 161–165, 217–218, 259–265, 300–302
  • CMOS ~ 350–355, 426, 437–440
  • MOSFET ~ 338–346, 426, 468
  • NMOS ~ 338–350
• inverting OP Amp circuit, see OP Amp circuit

j

• JFET 304–313, 316
  • CS ~ amplifier 445–447, 457–458
  • n‐channel ~ 304, 305
  • p‐channel ~ 304, 305
• junction:
  • ~ capacitance 45
  • ~ FET, see JFET
  • ~ gradient coefficient 45
  • ~ potential 45

k

• k‐Δ test 731
• Kuroda’s identities 636, 638–639

l

• L‐type impedance matcher, see impedance matcher
• Laplace transform 761–765
  • ~ of electric circuits 765
  • ~ table 764
• large‐signal (DC):
  • ~ analysis 7
  • ~ model of BJT 115
  • ~ model of diode 45
• LC ladder 553–560, 746–747
  • П(pi)‐type ~ 557
  • T‐type ~ 557
• leakage (reverse saturation) current 44
• limit on output current of OP Amp 514–516
• limit on output voltage of OP Amp 514–516
• limiter 83, 84, 89–90
• linear combiner 477–479
• load line 1–42, 68, 69
  • AC ~ 150, 152, 234, 365
  • ~ analysis 1–10, 111, 308–309
  • DC ~ 150–151, 234, 308
• load (voltage) reflection coefficient 603
• loading effect 476, 477
• LPF (lowpass filter) 502–504, 526, 533–535, 553
• L‐type impedance matcher, see impedance matcher

m

• magnitude‐and‐phase form (of Fourier series) 19–20
• magnitude (unit) identifier (in PSpice) 795, 797
• magnitude scaling 549–550
• maximum gain 733–740
  • ~ design 733, 758–759
• maximum output voltage (of OP Amp) 468
• maximum power transfer 725
• maximum stable gain (MSG) 734
• MFB (multiple feedback) circuit 495–496, 504
• microstrip filter design 670–674
• midpoint voltage 339
• Miller
  • ~ (effective) capacitance 18
  • ~ effect 18
  • ~ multiplier 18
  • ~ theorem 18
• mirror ratio 329
• missing DC path to ground 797
• mono‐stable 494
• Monte Carlo analysis 822–825
• MOSFET (metal oxide semiconductor FET) 313–360
  • CS ~ amplifier 447–448
  • ~ current mirror, see current mirror
  • depletion ~ 313, 328, 347–350, 376–380
  • diode‐connected ~ 327, 432–434
  • enhancement ~ 313–317, 342–346, 373–376
  • ~ inverter, see inverter
  • n‐channel ~, see NMOS
  • p‐channel ~, see PMOS
  • ~ used as a resistor 327–328
• μ‐parameter test 731
• MSG, see maximum stable gain
• multi‐stage:
  • ~ BJT amplifier, see BJT)
  • ~ FET amplifier 380–398, 450–457

n

• NAND gate 209–229
  • DTL ~ 209–215
  • TTL ~ 215–228
• negative feedback 475
  • ~ path (of OP Amp) 469
  • stabilization effect of ~ 470
• negative resistance 513–514
• NMOS (n‐channel MOSFET) 314, 318
  • ~ inverter see inverter
  • ~ ROM 359
• Noise analysis (in PSpice) 825–829
• noise margin 162, 341
  • absolute ~ 162, 341
  • high ~ 162, 341
  • low ~ 162, 341
• nonlinear:
  • ~ equation 775–777
  • ~ RC circuit 37–38
  • ~ resistor circuit 1–10, 36–37
  • ~ RL circuit 7–10
  • ~ (saturation) region of OP Amp 469
• normalized impedance 604
• Norton equivalent 11–18
• notch frequency, see rejection frequency

o

• ohmic region 305, 309
• one‐shot method 13
• OP Amp (operational amplifier) 468–470
  • ~ circuit 467–522
  • closed‐loop gain of ~ circuit 472
  • ideal ~ 470
  • inverting ~ circuit 471–473
  • inverting positive‐feedback ~ circuit 480–481
  • KCL to the output node of ~ 475
  • maximum output voltage of ~ 468
  • ~ with negative feedback 471–479, 485–487
  • non‐inverting ~ circuit 473–475
  • non‐inverting positive‐feedback ~ circuit 481–485
  • open‐loop (voltage) gain of ~ 469
  • ~ with positive feedback 479–485, 487–495
  • practical analysis rule of ~ circuit 475
• open‐circuit voltage 12
• open‐collector output 227–228
• open‐loop (voltage) gain (of OP Amp) 468
• operating (bias) point 2–6, 8, 111, 114, 307
• operation mode (region)
  • ~ of BJT, see BJT
  • ~ of FET, see FET
• output resistance 307

p

• parallel form 526
• parallel interconnection, see two‐port
• parameters:
  • a‐~ 678–679, 681–684
    • circuit‐models with given ~ 699
  • b‐~ 678–679
    • circuit‐models with given ~ 699
  • g‐~ 679
    • circuit‐models with given ~ 699–700
  • h‐~ 679, 684–685
    • circuit‐models with given ~ 699–700
  • s‐~ 711
  • y‐, 680–681
    • circuit‐models with given ~ 699
  • z‐, 679–680
    • circuit‐models with given ~ 697–698
• PARAMETERS (in PSpice) 814
• Parametric Sweep analysis (in PSpice) 814–817
• passband 525, 538
  • ~ edge frequency 524, 525
  • ~ ripple 524, 525
• passive filter realization 553–555
• peak frequency 538, 539, 574, 575
• phase constant 602
• piece‐wise linear (VPWL/IPWL) waveform 795
• pinch‐down voltage, see pinch‐off voltage
• pinch‐off region 305
• pinch‐off voltage, see threshold voltage
• Place Part dialog box (in PSpice) 793, 794
• PMOS (p‐channel MOSFET) 313, 314
• port condition 692–697
• positive feedback 470, 480–492
  • destabilization effect of ~ 482
  • first‐order OP circuit with ~ 487–495
  • inverting ~ OP Amp circuit 480–481
  • non‐inverting ~ OP Amp circuit 481–485
• power flow 606
• power gain:
  • available ~ 726
  • ~ circle 726–728
  • operating ~ 725
  • transducer ~ 725
    • unilateral ~ 726
• precision rectifier, see rectifier
• propagation constant 602
• Property Editor spreadsheet (in PSpice) 81, 795, 828
• PSpice: 791–829
  • ~ model 822, 823
  • ~ part name 793–794
• pull‐down resistor 213
• pulse (VPULSE/IPULSE) waveform 796
• PWL, see piece‐wise linear waveform
  • ~ model of diode, see diode
  • ~ model of Zener diode, see Zener diode

q

• Q‐circle 611
• quality factor 42, 538, 543, 545–549
  • external ~ 548
  • filter ~ 548
  • loaded ~ 548
• quarter‐wave (λ/4) transformer, see QWT
• quiescent (bias) point 2, 3
• QWT 631–635, 667–670
  • binomial (multisection) ~ 633–634
  • Chebyshev (multisection) ~ 634–635

r

• RC integrator, see integrator
• reciprocity condition 106
• reciprocity of a two‐port network 687, 721–722
• rectangular (or square) wave 22–24
  • ~ generator 487–489
• rectified cosine wave 25–28
• rectifier 53–67
  • full‐wave ~ 39
  • full‐wave ~ with LC filter 59–61
  • half‐wave ~ 53, 94–98
  • half‐wave ~ with capacitor filter 53–57
  • peak ~ 53
  • precision ~ 62–67, 98–100
• reflected voltage/current 602
• reflection loss (RFL) 606
• rejection frequency 542
• resonance condition 541
• resonant frequency 538, 541
• restorer 92
• return loss (RL) 606
• reverse‐active (operation) mode 110
• reverse‐bias mode 44
• reverse collector current 107
• reverse emitter current 107
• reverse saturation (leakage) current 106
• RFL, see reflection coefficient
• Richard’s transformation 636
• RL, see return loss
• RLC circuit:
  • parallel ~ 539–541, 544–545
  • series ~ 537–539, 541–544
• rms (root‐mean‐square) 35

s

• Sallen‐Key circuit 496–502, 503–504, 506
• saturation current 44, 106, 305
• saturation operation mode, see saturation mode
• saturation output voltage (of OP Amp), see maximum output voltage
• saturation region 109, 306, 316
• saturation voltage, see maximum output voltage
• scattering parameters, see s‐parameters
• Schematic 792–797
• Schmitt trigger 482–485
• selectivity, see quality factor
• Sensitivity analysis (in PSpice) 819–821
• sharpness, see quality factor
• Shockely diode equation, see diode
• short‐circuit current 12
• Simulation Profile (in PSpice) 798–800
• Simulation Settings dialog box (in PSpice) 800
• sine‐and‐phase form (of Fourier series) 19
• single‐stub impedance matching, see impedance matching
• sinusoidal (VSIN/ISIN) waveform 795
• SKIPBP (in PSpice) 825–829
• small‐signal (AC):
  • ~ analysis 6
  • ~ analysis of diode circuits 67–74
  • ~ model of BJT 142–143
  • ~ model of diode, see diode
  • ~ model of FET 306
  • ~ resistance, see dynamic resistance
• Smith chart 608–616
• Smith V4.1 613
• source‐coupled pair 355–359
• source equivalence condition 11
• source follower, see CD (common‐drain) amplifier
• source transformation 10
• s‐parameters 709–723
  • effect of shifting reference planes on ~ 715–716
  • physical meaning of ~ 719
• spatial frequency, see propagation constant
• spectrum 20
• square wave, see rectangular wave
• stability 728–733
  • ~ circle 729, 731
  • ~ condition 730–732
  • conditional ~ 728
  • geometric input/output ~ factor 731
  • input ~ condition 728
  • output ~ condition 728
  • Rollett ~ factor 731
  • unconditional ~ 728
• stabilization:
  • ~ effect of negative feedback 470
  • ~ of a two‐port network 756–758
• stable:
  • conditionally ~ 728
  • potentially ~ 728
  • ~ region 732
  • unconditionally ~ 728
• standard values:
  • ~ of capacitors 786–789
  • ~ of inductors 790
  • ~ of resistors 785–789
  • ~ of Zener diode voltage 790
• standing wave ratio (SWR) 604–608
• static resistance 5
• stopband 525
  • ~ attenuation 524, 525
  • ~ edge frequency 524, 525
• storage time 45
• stub:
  • filter implementation using ~s 635–646
  • LPF using ~s 670–674
  • open(‐circuited) ~ 622
  • series‐connected single ~ 622–626
  • short(‐circuited) ~ 622
  • shunt‐connected single ~ 618–622
• superdiode 63
• switching threshold voltage, see threshold voltage
• SWR, see standing wave ratio
• symbolic computation 779–780
• symmetry:
  • even ~ 22
  • ~ for Fourier series 23
  • half‐wave ~ 22
  • odd ~ 22
  • ~ of a two‐port network 685, 721–722

t

• tapped‐C impedance matcher, see impedance matcher
• THD (total harmonic distortion) 32
• thermal voltage 44, 46
• Thevenin equivalent 11
• 3dB frequency 509, 595, 538
• threshold:
  • ~ (gate) voltage 305, 314
  • switching ~ voltage 339
  • ~ voltage 75, see pinch‐off voltage
• timer 553, 492–495
• total harmonic distortion, see THD
• totem‐pole output stage 222–227
• Trace (in PSpice) 800, 803, 804
• transconductance (gain) 142, 305
• transconductance coefficient 305
• transducer gain, see power gain
• transfer characteristic curve 474
• Transfer Function analysis (in PSpice) 819–821
• Transient analysis (in PSpice) 807–812
• transistor 106
• transition capacitance, see junction capacitance
• transition point 339
• transit time 45
• transit time capacitance, see diffusion capacitance
• transmission line 601–608
  • lossless ~ 605, 616
  • models for ~ 699
  • reactance effect of lossless ~ 616–617
  • s‐parameters of ~ 722
• triangular wave 22, 24
  • ~ generator 490–492
• trigonometric form (of Fourier series) 19
• triode region, see ohmic region
• tri‐state output 227–228
• TTL NAND 215–228
• T‐type impedance matcher, see impedance matcher
• T‐type LC ladder, see LC ladder
• twin‐T high Q BSF 507
• II‐type LC ladder, see LC ladder
• two‐port:
  • conversion among ~ parameters 685–689
  • interconnection of ~ networks 689–692
  • cascade ~ 692
  • parallel (shunt) ~ 690
  • parallel (shunt)‐series ~ 690
  • series ~ 690
  • series‐parallel(shunt) ~ 690
  • shunt ~, see parallel ~
  • ~ network 677–723
  • ~ network with source/load 700–709, 714–723
  • ~ parameters 677–709
  • ~ power gains 723–728
  • properties of ~ network 701
  • stabilization of ~ network 756–758

u

• UE 639
• unit element, see UE
• unit identifier in PSpice, 797
• unstable
  • potentially ~, see conditionally stable

v

• VAC (AC voltage source) (in PSpice) 795
• virtual ground 472
• virtual open 470
• virtual (imaginary) short 470
• voltage:
  • ~‐to‐current converter 512
  • ~ doubler 92
  • ~ follower 476–477
  • ~ magnification ratio 538
  • ~ quadrupler 94
  • ~ reflection coefficient 603, 610
  • ~ transfer characteristic (VTC) 162, 213, 215
• VPULSE (in PSpice) 796
• VPWL (in PSpice) 796
• VSIN (in PSpice) 796
• VTC, see voltage transfer characteristic

w

• waveform 796, 801–806
• wavelength toward generator (WTG) 610
• Wien bridge oscillator 518
• WTG, see wavelength toward generator

y

• y‐parameters, see parameters

z

• Zener:
  • ~ (breakdown) voltage 44, 75
  • ~ diode 75–84
  • ~ knee current 44, 75
  • ~ knee voltage 44, 76
  • ~ PWL model of ~ diode 75
  • ~ regulator 76–82, 101–104
  • ~ resistance 75
• zero:
  • ~ ‐bias drain current 305
  • ~ bias junction capacitance 45
  • ~ gate voltage drain current, see zero bias drain current
• z‐parameters, see parameters