Index
A
Abbe’s numbers, 88
absorbance, light propagation, 13–14
absorption
indirect allowed transition, 43
lattice vibration absorption intensities, 56
Nd:YAG lasers, 138
saturation, site-controlled quantum dots, 258–260
absorption coefficient
direct allowed transition, 26–27
direct forbidden transition, 28
excitons, direct transition, 40–41
excitons, indirect transition, 42
extinction coefficient, 83
free carrier absorption, 39
indirect allowed transition, 30–31, 42
indirect forbidden transition, 31, 43
lattice vibration absorption, 47–49
microcrystal, 127
one phonon selection rule/absorption coefficient, 48–49
third-order nonlinear optics, 121
absorption edges
direct forbidden transition, 28
interband transitions, 32
oxide silicate glass, 88
absorptions by electrons
additional absorptions, 43
direct allowed transition, 25–27
direct forbidden transition, 27–28
direct interband transitions, 24–28
free carrier absorption, 38–39
fundamentals, 20
indirect allowed transition, 42–43
indirect forbidden transition, 43
intraband transitions, 24, 35, 37–39
n-type semiconductors, 38
semiconductors, 32–33, 35, 37–38
transition probability and transition rate, 21–23
absorption spectrum
anisotropy, external disturbance, 104
interband transitions, 32
ionic crystals, 35
Nd:glass lasers, 153
one phonon selection rule/absorption coefficient, 49
acoustic branch and mode
factor group analysis, 54
free carrier absorption, 39
one phonon selection rule/absorption coefficient, 48
second-order Raman scattering, 71
adiabatic approximation, 46
AFM,
aggregation, classification by, 2
aging effect, optical glass surface, 79
air-bridge waveguides, 240–241
Airy, G.B., 200
alkaline metals, 32
amorphous silicate, 88
amplitude
light propagation, homogenous medium, 12–13
scattering probabilities, 64
transition probability, 63
transmittance, 82
analysis, slab/planar waveguides, 168–175
anharmonicity, 56
anisotropic crystals, 70
anisotropic materials
polarizers and polarizing beam splitters, 96, 99
annihilation probability, 55
antenna systems, 270, 282, 284
anti-resonant reflecting optical waveguide (ARROW), 168, 179–183
anti-Stokes scattering
light scattering theory, 61
quantum theory for light scattering, 64
antisymmetric mode, 173
Arago, D.F.J., 199
ARROW,
arsenic materials, 91
asymmetric operations, 52
atomic force microscope (AFM), 241, 257–258
atomic state, 62
auto-cloned structures, 237–240
B
band diagrams, 236
band edge absorption, 104
band gap and band gap energy
anisotropy, external disturbance, 100
direct allowed transition, 26
direct forbidden transition, 28
exciton absorption, 39
ionic crystals, 35
semiconductor lasers, 156, 158
semiconductor waveguides, 186–187
band mode, 57
band-to-band transition, 81
biaxial crystal, 16–17, 93, 95
biexponential behavior, 128
birefringence
Alexandrite lasers, 151
Nd:YAG lasers, 138
Nd:YLF lasers, 139
polarizers, 96
suppression, 134
Bloch function, 24
Bloch wave, 268
Bohr radius, 40
Boltzmann distribution, 135–136
Born-Oppenheimer approximation, 46
borosilicate glass, 89
Bose-Einstein statistic equation, 55
Boyle, R., 199
Bragg reflector, 161
Brillouin scattering
historical developments, 58
surface plasmonics, 269
Brillouin zone, 236
Bruggeman theory, 219
bulk mode changes, 57
bull’s eye, 270
C
calcite prisms, 96
Canada balsam, 96
CARS,
centro-symmetry, 70
ceramic lasers
fundamentals, 154
performance, 156
chalcogenide materials, 91
characteristics and characterizations
exchange symmetry, 112
materials, thin films, 221
photonic crystal materials, 241–243, 246
chemical vapor deposition (CVD), 189–190
chiral, organic third nonliner optics, 125
chirped optical pulses, 149
classifications
dimensional structures, 236
optical nonlinearity, site-controlled quantum dots, 258
cleavage surface, 91
cloaking, 282
CMOS,
coexistence, dipoles and free electrons, 19
coherent anti-Stokes Raman scattering (CARS), 120, 122
coherent length, 112
combination bands, 51
combinatorial scattering, 58
complex refractive index, 12, 81,
complimentary metal-oxide-semiconductor (CMOS), 267
conduction bands
direct allowed transition, 26
direct interband transitions, 24
indirect allowed transition, 29–30
indirect interband transition, 28
interband and intraband transitions, 24
metals, 31
semiconductor lasers, 156
semiconductors, 32
conjugate systems, 124
conservation of momentum
direct interband transitions, 25
indirect allowed transition, 30
multiphonon selection rule/absorption coefficient, 50
pumping and signal rays, 111
second-order Raman scattering, 70
Cotton-Mouton effect, 100
coupling strength, 127
creation probability, 55
critical angle, opaque material, 85
critical condition, population inversion, 136
Crown and Flint glasses, 86
crystal,
density of, 48
microclusters, third-order nonlinear optics, 126–130
structures and optical properties, 113–114
symmetry, light scattering, 66, 70
crystal geometry
glide plane, 6
screw axis, 6
crystal silicate, 88
cubic crystalline system
first-order Raman scattering and crystal symmetry, 66
fundamentals, 92
cubic symmetry, 48
cutoff frequency, 173
CVD,
cyclic axis, 2
Czochralski method
Alexandrite lasers, 149
alkali halide crystals, 90
Yb:YAG lasers, 146
D
damping
light propagation, homogenous medium, 12–13
nonlinear optics, materials, 108
one phonon selection rule/absorption coefficient, 49
da Vinci, Leonardo, 57
degenerated semiconductors, 20
degenerate four-wave mixing (DFWM)
fundamentals, 122
microcrystal, 127
third-order nonlinear optics, 120
deliquescence property, 91
delta functions
indirect allowed transition, 30
optical nonlinearity, 259
quantum theory for light scattering, 65
denominator
indirect allowed transition, 30
indirect interband transition, 29
light from double/multilayers, 214
density function, 31
density of crystal, 48
density of state
direct allowed transition, 26
direct forbidden transition, 27
transition probability and transition rate, 23
design, optical filters
Fourier transform method, 217–218
multilayer filter optimization, 216
needle method, 216
design, photonic crystal materials, 241–243, 246
development, lasers and laser materials, 134
DFG,
DFWM,
diagonal tensors, 92
Dich’s super-radiation, 118
dielectric constants
crystals, 92
dipole dispersion, 17
effective medium theories, 218–219
free carrier dispersion, 19
homogenous medium, 12
inhomogenous medium, 14
lattice vibration absorption intensities, 57
light dispersion, 17
materials for ultraviolet, visible, and infrared regions, 80–82
metal, 125
microcrystal, 128
optical properties of material, 81
dielectric function, 18
dielectric tensors, 92
difference band, 51
difference frequency generation (DFG), 110–112
difference of mass, 57
diffraction efficiency, 104
diode-pumped solid-state lasers (DPSSLs), 137
dionedioximes metal, 125
dip-coating technique, 188
dipole moments
factor group analysis, 54
first-order Raman scattering and crystal symmetry, 66
lattice vibration absorption, 44–47
light scattering theory, 59
microcrystal, 127
multiphonon selection rule/absorption coefficient, 49
organics, third nonliner optics, 124
oxide silicate glass, 88
dipole nano-antenna, 270
dipole oscillators, 61
dipoles and free electrons coexistence, 19
Dirac delta function, 170
direct allowed transition, 25–27
direct forbidden transition, 27–28
direct interband transitions
direct allowed transition, 25–27
direct forbidden transition, 27–28
dispersion
free carrier dispersion, 19
fundamentals, 81
oxide silicate glass, 86
photonic band gap, 267
spectrum, 81
Doppler effect, 58
double frequency, 70
double-hetero-structure nanocavity, 247–248
double layers, reflection of light, 213–214
DPSSL,
Drude theory, 39
dye lasers, 108
E
effective-index method, 178
effective medium theories, 218–219
eigenfunctions, eigenvalues, and eigenvectors
dipole moments, 45
excitons, direct transition, 40
lattice vibration absorption intensities, 56
one phonon selection rule/absorption coefficient, 47
transition probability and transition rate, 21
electrical metamaterials, 274
electric birefringence effect, 101
electric vector, 47
electron-beam lithography, 253
electronic polarization, 59
electron-phonon coupling strength, 127
electrons
additional absorptions, 43
direct allowed transition, 25–27
direct forbidden transition, 27–28
direct interband transitions, 24–28
free carrier absorption, 38–39
fundamentals, 20
inability to absorb light, 38
indirect allowed transition, 42–43
indirect forbidden transition, 43
intraband transitions, 24, 35, 37–39
n-type semiconductors, 38
semiconductors, 32–33, 35, 37–38
transition probability and transition rate, 21–23
electro-optical effect, 101, 108
electro-optic waveguides, 183–185
energy bands, 29
energy conservation condition, 48
energy density, 26
equilibrium position, 45
even mode, 173
even-power terms, 108
exchange symmetry, nonresonance, 112, 115–116
exciton absorption
additional absorptions, 43
direct allowed transition, 27
indirect allowed transition, 42–43
indirect forbidden transition, 43
external structure, thin film materials, 220–221
external vibration, factor group analysis, 54
extinction coefficient
absorption coefficient, 83
light propagation, homogenous medium, 12
materials for ultraviolet, visible, and infrared regions, 80–82
mechanical spring model, 81
F
fabrication techniques
chemical vapor deposition, 189–190
dip-coating technique, 188
spin-coating technique, 188
sputtering technique, 189
vacuum evaporation technique, 189
Fabry-Perot interferometer, 71, 203
Fabry-Perot resonator, 179
Faraday effects, 101
Faraday rotation, 100
far-infrared region,
light from single interface, 213
metals, 32
reflection spectra, 20
FDTD,
Fermi’s golden rule, 23
ferroelectricity, 102
fictitious index profile, 178
final state
dipole moments, 46
indirect allowed transition, 30
quantum theory for light scattering, 64–66
finite-different time-domain (FDTD), 242
first excited state, 54
first-order Brillouin scattering, 71
first-order dipole moment, 54
first-order electric dipole moment, 66
first-order perturbation
dipole moments, 44
quantum theory for light scattering, 63
transition probability and transition rate, 22
first-order polarization, 108–109
first-order Raman scattering, 66, 70
first-order Raman tensors, 60
first-order scattering, 61, 64
first-order susceptibility, 66
fluorescence
Nd:glass lasers, 152
Nd:YAG lasers, 138
three-level system, 136
Yb:YAG lasers, 148
fluoride and fluorine-phosphate glasses, 88
fluorides, 91
Fourier components, 280
Fourier transform method, 217–218
four-level system model, 136–137
four-wave mixing (FWM), 122
Frantz-Keldish effect, 104
free carrier absorption, 38–39
free carrier dispersion, 19
free electrons and dipoles coexistence, 19
Frenkel excitons, 123
frequency region, 23
Fresnel, A.J., 199
Fresnel coefficient and formulas
light from double/multilayers, 213
light from single interface, 208
optical filter design, 215
theory, thin film materials, 203–207
full-width-at-half-maximum (FWHM), 182
fundamental method, optical filter design, 215–216
fused silicate, 88
FWHM,
FWM,
G
garnet, Nd:YAG lasers, 137
Gaussian field distribution, 249
Gaussian profile, 192
giant oscillator effect, 128
glass lasers
fundamentals, 151
material properties, 152
glide plane, 6
graded index waveguides, 190–192
gradient index layer, 220
grating coupler and surface, 268
ground state, 54
group theory application, lattice vibration, 51–54
Grüeneisen constant, 56
H
H-aggregates, 118
halogenation, 187
Hamiltonian
dipole moments, 44
electrons in solids, absorptions by, 20
exciton absorption, 40
excitons, direct transition, 40
quantum theory for light scattering, 62
transition probability and transition rate, 21
harmonic bands, 55
Hermann-Maugin expression, 6
hexagonal crystalline system, 15, 92
higher-order polarization, 109
high-intensity mercury arc lamps, 58
historical developments, 57–58, 86, 199–200
Hooke, R., 199
I
identity, symmetry operations, 2
idler waves, 110
imaginary parts
dipole dispersion, 18
free carrier dispersion, 19
mechanical spring model, 81
impurities
free carrier absorption, 39
lattice vibration absorption, 57
optical waveguide fabrication, 188
index ellipsoid,
indirect allowed transition, 29–31, 42–43
indirect forbidden transition, 31, 43
indirect interband transitions, 28–31
induced circular dichroism, chiral, 125
induced dipole oscillators, 61
infrared absorption, 54
inhomogeneous medium, light propagation
fundamentals, 14
inhomogenous structures, 219
initial state, dipole moments, 46
inorganic materials, 123
integrated circuit technologies, 251–252
direct allowed transition, 25–27
direct forbidden transition, 27–28
fundamentals, 24
indirect allowed transition, 29–31
indirect forbidden transition, 31
internal structure, thin film materials, 220–221
internal vibration, factor group analysis, 54
intraband transitions
absorptions by electrons, 24, 35, 37–39
free carrier absorption, 38–39
n-type semiconductors, 38
inverse Fourier transform method, 217
inversion, symmetry operations, 2
ion-exchange technique, 190–192
ionic crystals
absorption by impurities, 57
infrared region, 82
multiphonon selection rule/absorption coefficient, 49
ionic model, 56
ion-implantation technique, 192
ion refractive index, 88
J
J-aggregates, 118
K
Kaiser window, 218
Kerr effect
anisotropy, external disturbance, 102
electro-optic materials, 183
self-divergence and self-focusing, 123
third-order nonlinear optics, 120
Kerr rotation angles, 100
Kretchmann method, 267
Kronecker delta function, 170,
L
Landau-Placzek equation, 72
Landau splitting, 71
large conjugate systems, 124
laser crystals
fundamentals, 137
Ti:Sapphire lasers, 145–146, 148–149
Yb:YAG lasers, 145
lasers,
nonlinear optics, materials, 108
Raman scattering, 58
laser written waveguides, 194
lattice vector summation, 24
lattice vibration
dipoles and free electrons coexistence, 20
free carrier absorption, 39
quantum theory for light scattering, 63
lattice vibration absorption
group theory application, 51–54
impurities, 57
Rayleigh’s theorem, 57
symmetry species and characters, 51–52
LED,
light, dispersion
coexistence, dipoles and free electrons, 19
dielectric constant, 17
free carrier dispersion, 19
polarization, 17
transverse wave dispersion, 17–18
light, propagation
fundamentals, 11
light-emitting diodes (LEDs), 156
linear polarization, 107
line spectrum, 39
liquid-phase expitaxy (LPE), 189–190
lithium niobate, electro-optic effects, 183–185
local mode, 57
longitudinal mode, 56
Lorentzian functions, 182
Lorentz model, 81
Lorenz-type resonance, 274
low group velocity design, 243, 246
low-pressure CVD (LPCVD), 189, 193
LPCVD,
LPE,
M
Mach-Zehnder-type interferometric waveguides, 272
magnetic circular dichroism, 100
magnetic Kerr effect, 100
magneto-optical effects, 99
material properties
glass lasers, 152
Nd:glass lasers, 152
Nd:YLF lasers, 139
Nd:YVO4 lasers, 142
semiconductor lasers, 156, 158–159
Ti:Sapphire lasers, 146
Yb:YAG lasers, 145
materials, nanophotonics
absorption saturation, 258–260
auto-cloned structure, 237–240
band diagram, 236
characterization, 241–243, 246
classification, dimensional structures, 236
classification, optical nonlinearity, 258
low group velocity design, 243, 246
metal-mask molecular beam epitaxy, 254–255, 257
nano-jet-probe method, 257–258
negative refractive index materials, 274–284
optical nonlinearity classification, 258
photonic crystal materials, 235–249
photonic integrated circuit technologies, 251–252
propagation loss, 241
properties, 236–237, 264, 266–269, 274–279
quantum dot materials, 250–264
site-controlled quantum dots, 253–264
surface plasmonic materials, 264, 266–273
third-order optical nonlinearity, 258–260
topology optimization design, 242–243
waveguide fabrication, 237, 240–243
materials, nonlinear optics
coherent anti-Stokes Raman scattering, 122
crystal microclusters, 126–130
difference frequency generation, 110–112
four-wave mixing, 122
organic microcrystals, 126–130
second harmonic generation, 110–112
second-order nonlinear optics, 118
self-focusing and self-divergence, 123
semiconductor clusters, 126–130
single crystals, 112, 115–116, 118
sum frequency generation, 110–112
third-order nonlinear optics, 120–130
materials, optical waveguides
chemical vapor deposition, 189–190
dip-coating technique, 188
electro-optic waveguides, 183–185
fabrication techniques, 187–190
graded index waveguides, 190–192
ion-exchange technique, 190–192
ion-implantation technique, 192
laser written waveguides, 194
multilayer optical waveguides, 178–183
polymer waveguides, 187, 190–192
power carried by guided mode, 175–176
semiconductor waveguides, 186–187
silica on silicon waveguides, 193
silicon-on-insulator waveguides, 194
silicon oxynitride waveguides, 193
silicon waveguide technology, 193–194
slab/planar waveguides, 168–176
spin-coating technique, 188
sputtering technique, 189
thermal diffusion technique, 192
three-dimensional structures, 176–178
vacuum evaporation technique, 189
materials, solid-state lasers
development, 134
four-level system model, 136–137
fundamentals, vii
semiconductor lasers, 156, 158–159
semiconductor saturable absorber, 161
three-level system model, 135–136
Ti:Sapphire lasers, 145–146, 148–149
Yb:YAG lasers, 145
materials, thin films
characteristics, 221
design, optical filters, 214–218
effective medium theories, 218–219
Fourier transform method, 217–218
Fresnel coefficients, reflection and transmission, 203–207
fundamentals, 199–203, 229, vii
inhomogenous structures, 219
needle method, 216
materials, ultraviolet, visible, and infrared regions
amorphous silicate, 88
crystal silicate, 88
fused silicate, 88
polarizers and polarizing beam splitters, 96, 99
possible element materials, 85–91
ultraviolet region, 89
Maxwell-Garnet theory, 218
MBE,
mechanical spring model, 81
mercury arc lamps, 58
metal-mask (MM) molecular beam epitaxy, 254–255, 257
metal organic CVD (MOCVD), 189
metals, interband transitions, 31–32
MF,
MM,
MOCVD,
mode leakage loss, 179
molecular beam epitaxy (MBE), 189–190, 257
momentum of the electron, 62
mono-atom crystals, 47
monoclinic crystalline system, 16, 92, 94
monomer vapors, 190
monotonous wavelength dependence, 39
multilayer filter optimization, 216
multilayer optical waveguides, 178–183
multilayers, reflection of light, 213–214
multiple interference effect, 83
multiple quantum wells, 128
N
nano-antenna, 270,
nano-crystals, 126
nano-jet-probe (NJP) method, 257–258
nano optical nonlinearity,
nanophotonics, materials
absorption saturation, 258–260
auto-cloned structure, 237–240
band diagram, 236
characterization, 241–243, 246
classification, dimensional structures, 236
classification, optical nonlinearity, 258
low group velocity design, 243, 246
metal-mask molecular beam epitaxy, 254–255, 257
nano-jet-probe method, 257–258
negative refractive index materials, 274–284
optical nonlinearity classification, 258
photonic crystal materials, 235–249
photonic integrated circuit technologies, 251–252
propagation loss, 241
properties, 236–237, 264, 266–269, 274–279
quantum dot materials, 250–264
site-controlled quantum dots, 253–264
surface plasmonic materials, 264, 266–273
third-order optical nonlinearity, 258–260
topology optimization design, 242–243
waveguide fabrication, 237, 240–243
narrow frequency region, 23
natural quartz, 88
natural resonant frequency, 108
near-field scanning optical microscope (NSOM), 282
needle method, 216
negative index materials (NIM)
negative uniaxial crystal, 16
NIM,
NJP,
noble metals, 32
nonlinear optic material
coherent anti-Stokes Raman scattering, 122
crystal microclusters, 126–130
difference frequency generation, 110–112
four-wave mixing, 122
organic microcrystals, 126–130
second harmonic generation, 110–112
second-order nonlinear optics, 118
self-focusing and self-divergence, 123
semiconductor clusters, 126–130
single crystals, 112, 115–116, 118
sum frequency generation, 110–112
third-order nonlinear optics, 120–130
nonpolarized incident light, 66
nonresonance term, 121
nonzero conditions
direct interband transitions, 25
factor group analysis, 54
first-order Raman scattering and crystal symmetry, 66
normalization, 22
NOSM,
numerator, 214
O
observed optical spectrums, 18
occupation rate, 127
OD,
odd mode, 173
odd-power terms, 108
opaque material, 85
optical anisotropic materials
polarizers and polarizing beam splitters, 96, 99
optical branch, 48
optical communication, 108
optical constants, 18
optical density (OD), 13–14, 33, 35
optical filter design
Fourier transform method, 217–218
multilayer filter optimization, 216
needle method, 216
optical Kerr effect, 123,
optical nonlinearity (ONL), 258,
optical properties, materials, 222–228
optical properties, solids
absorptions by electrons, 20–43
additional absorptions, 43
coexistence, dipoles and free electrons, 19
dielectric constant, 17
direct allowed transition, 25–27
direct forbidden transition, 27–28
direct interband transitions, 24–28
first-order Raman scattering, 66, 70
free carrier absorption, 38–39
free carrier dispersion, 19
glide plane, 6
group theory application, 51–54
impurities, 57
indirect allowed transition, 29–31, 42–43
indirect forbidden transition, 31, 43
indirect interband transitions, 28–31
intraband transitions, 24, 35, 37–39
lattice vibration absorption, 44–57
n-type semiconductors, 38
polarization, 17
Rayleigh’s theorem, 57
screw axis, 6
second-order Raman scattering, 70–71
symmetry species and characters, 51–52
transition probability and transition rate, 21–23
transverse wave dispersion, 17–18
various Raman scatterings, 71
optical rotation power, 88
optical waveguides, materials
chemical vapor deposition, 189–190
dip-coating technique, 188
electro-optic waveguides, 183–185
fabrication techniques, 187–190
graded index waveguides, 190–192
ion-exchange technique, 190–192
ion-implantation technique, 192
laser written waveguides, 194
multilayer optical waveguides, 178–183
polymer waveguides, 187, 190–192
power carried by guided mode, 175–176
semiconductor waveguides, 186–187
silica on silicon waveguides, 193
silicon-on-insulator waveguides, 194
silicon oxynitride waveguides, 193
silicon waveguide technology, 193–194
slab/planar waveguides, 168–176
spin-coating technique, 188
sputtering technique, 189
thermal diffusion technique, 192
three-dimensional structures, 176–178
vacuum evaporation technique, 189
optic axis, 14
organic materials, 118
organic microcrystals, 126–130
organics, third-order nonlinear optics, 123–125
orthogonal prisms, 99
orthorhombic crystalline system, 16, 92, 94
oscillation frequencies, 108
oscillator effect, 128
oscillators, 61
oscillator strength
crystallite volume, 127
dipole dispersion, 18
mechanical spring model, 81
microcrystal, 128
overlapping continuum, 40
oxide glass, 128
P
parabolic bands, 27
parity, 66
PECVD,
perfect reflection, 85
performance
Alexandrite lasers, 151
ceramic lasers, 156
Nd:YAG lasers, 138
Nd:YLF lasers, 140
semiconductor lasers, 159
Ti:Sapphire lasers, 146, 148–149
Yb:YAG lasers, 145
perturbation
direct interband transitions, 24
indirect interband transition, 29
transition probability and transition rate, 22
phase-matching condition, 108, 111
phonon emission, 31
photonic applications, 269–275, 279–284
photonic crystal materials
auto-cloned structure, 237–240
band diagram, 236
characterization, 241–243, 246
classification, dimensional structures, 236
fundamentals, 235
low group velocity design, 243, 246
propagation loss, 241
topology optimization design, 242–243
waveguide fabrication, 237, 240–243
photonic crystal symmetrical Mach-Zehnder (PC-SMZ) switches, 258, 261–264
photonic crystal waveguides, 241–249
photonic integrated circuit technologies, 251–252
phthalocyanines, 124
physics, slab/planar waveguides, 168–175
piezoelectric effect, 102
piezo power, 88
PIM,
p-i-n junction structure, 159
plasma-enhanced CVD (PECVD), 189, 193
plasma excitation, 82
Plasmon, 71
plasmon antenna, 270
PMMA,
Pockels effect
anisotropy, external disturbance, 101–102, 104
electro-optic materials, 183
Poisson, S.D., 199
polarizabilities
light scattering theory, 59–60
quartz, 88
single crystal material, 115–116
third-order nonlinear optics, 120
polarization
direct forbidden transition, 27
fundamentals, 82
indirect allowed transition, 31
laser oscillation, 134
light dispersion, 17
light scattering theory, 59
nonlinear optics, materials, 107–109
one phonon selection rule/absorption coefficient, 47
photonic band gap, 267
silica waveguides, 183
slab/planar waveguides, 175
polarizers and polarizing beam splitters, 96, 99
Polaroid film, 96
polyacetylene, 124
polymer waveguides
fundamentals, 190
graded index waveguides, 190–192
ion-exchange technique, 190–192
ion-implantation technique, 192
thermal diffusion technique, 192
polymethyl methacrylate (PMMA), 187
polythiophene, 124
porphyrins, 124
position vector, 24
positive index material (PIM), 276, 279
positive uniaxial crystal, 16
possible element materials
amorphous silicate, 88
crystal silicate, 88
fused silicate, 88
ultraviolet region, 89
power carried by guided mode, 175–176
principal angle, 85
principal axis, 2
principal dielectric constants, 92
principal of superposition, 83
principal quantum number, 40
principal refractive indices, 184
propagation
anti-resonant reflecting optical waveguide, 180
distance, 83
loss, photonic crystal materials, 241
properties
negative refractive index materials, 274–279
photonic crystal materials, 236–237
surface plasmonic materials, 264, 266–269
pseudoisocynanin (PIC), 124
pumping waves, 110
pure free electrons, 38
Q
Q-band absorption, 118
QD,
Q function, 217
Q-switching, 104
quadratic e-o effect, 183
quantum dots (QD), materials
absorption saturation, 258–260
classification, optical nonlinearity, 258
metal-mask molecular beam epitaxy, 254–255, 257
nano-jet-probe method, 257–258
optical nonlinearity classification, 258
photonic integrated circuit technologies, 251–252
site-controlled quantum dots, 253–264
third-order optical nonlinearity, 258–260
quantum theory, light scattering, 61–66
quantum well lasers and devices, 187
quartz
fundamentals, 88
near-infrared region, 91
prisms, polarizers, 96
quasi-normal-mode frequency, 56–57
R
Raman active irreducible representations, 67–69
Raman scattering
historical developments, 58
light scattering theory, 58
quantum theory for light scattering, 61–62, 65
single crystal material, 118
symmetry species and characters, 51
Raman selection rule, 54
Rayleigh (Lord), 58
Rayleigh scattering, 64, 71–72
Rayleigh’s theorem, 57
reactive ion beam etching (RIBE), 240
reactive ion etching (RIE), 193
real continuous region, 41
real continuous spectrum, 41
real index profile, 178
real parts
dielectric constant, 82
dipole dispersion, 18
free carrier dispersion, 19
mechanical spring model, 81
reciprocal lattice vector, 47
reduced mass
direct allowed transition, 26
excitons, direct transition, 40
one phonon selection rule/absorption coefficient, 48
reflectance
dipole dispersion, 18
light from single interface, 210–213
materials for ultraviolet, visible, and infrared regions, 82–85
one phonon selection rule/absorption coefficient, 49
optical filter design, 215
reflection-high-energy-electron-diffraction (RHEED), 255
reflection peak, 56
reflection plane, 2
refraction angle, 82
refractive index and refractive index ellipsoid
anisotropy, external disturbance, 101–102, 104
Brillouin scattering, 71
Canada balsam, 96
effective medium theories, 218
electro-optic materials, 183
extraordinary ray, 94
filters, inhomogeneous structure, 219
filters, internal or external structure of film, 220
Fresnel coefficients, reflection and transmission, 204
homogenous film, 203
homogenous medium, 12
humidity effect, 79
inhomogenous medium, 14
ion-exchange technique, 190
light from double/multilayers, 213
light from single interface, 208–209, 211–212
materials for ultraviolet, visible, and infrared regions, 80–82
nonlinear optics, materials, 108
optical filter design, 215
optical nonlinearity, 259
optical properties of material, 81
power carried by guided mode, 177
quantum theory for light scattering, 65
self-divergence and self-focusing, 123
semiconductor waveguides, 186
silica waveguides, 179, 181–183
silicon oxynitride, 173
slab/planar waveguides, 168
step method, 216
three-dimensional optical waveguide structures, 176
transparent material, 85
uniaxial crystal, 16
refractive index profile (RIP)
filters, inhomogeneous structure, 219
ion-exchange technique, 190
slab/planar waveguides, 168–170
step method, 217
relaxing time, 127
residual ray, 82
resonance
absorption by impurities, 57
mechanical spring model, 81
negative index materials, 274
one phonon selection rule/absorption coefficient, 48
third-order nonlinear optics, 121
reststrahlen band, 49
RHEED,
RIBE,
RIE,
RIP,
rotatory reflection axis, 2
rotatory vibration, 54
ruby, Alexandrite lasers, 149, 151
rugate filter, 217
S
sapphire
Alexandrite lasers, 151
near-infrared region, 89
ultraviolet region, 89
Yb:YAG lasers, 146
Savart plate, 99
scanning electron microscopy (SEM)
air-bridge waveguides, 240–241
nano-jet-probe method, 258
Nd:ceramic lasers, 155
PC-SMZ switches, 263
scanning tunneling microscope (STM), 254
scattered light, 61
Schönflies expression, 6
Schrodinger’s equation, 21, 40
screw axis, 6
second cladding layer, 179
second harmonic generation (SHG), 110–112
second-order nonlinear optics, 118
second-order perturbation
dipole moments, 44
free carrier absorption, 39
indirect interband transition, 28
quantum theory for light scattering, 63
second-order polarization, 109
second-order Raman scattering, 70–71
second-order Raman tensors, 60
second-order scattering, 61
second-order Voigt effect, 100
second term of scattered light, 61
Seidel’s five aberrations, 88
selection rules
lattice vibration absorption, 47–51
self-divergence and self-focusing, 123
SEM,
semiconductor lasers
fundamentals, 156
material properties, 156, 158–159
nonlinear optics, materials, 108
performance, 159
semiconductors
absorption by impurities, 57
absorptions by electrons, 35, 37–38
anisotropy, external disturbance, 104
dipoles and free electrons coexistence, 20
free carrier absorption, 38
infrared region, 91
materials, 24
microcrystal, 128
third-order nonlinear optics, 126–130
semiconductor saturable absorber (SESAM), 161
SERS,
SESAM,
SFG,
SHG,
silicon waveguide technology
laser written waveguides, 194
silica on silicon waveguides, 193
silicon-on-insulator waveguides, 194
silicon oxynitride waveguides, 193
silver bromide, 91
silver chloride, 91
single crystals, 112, 115–116, 118
single interface, reflection of light, 208–213
single-polarization, 175
site-controlled quantum dots
absorption saturation, 258–260
classification, optical nonlinearity, 258
metal-mask molecular beam epitaxy, 254–255, 257
nano-jet-probe method, 257–258
optical nonlinearity classification, 258
third-order optical nonlinearity, 258–260
SK,
slab/planar waveguides
power carried by guided mode, 175–176
SMZ,
Snell’s law, 82
soft phonon, 57
solids, optical properties
absorptions by electrons, 20–43
additional absorptions, 43
coexistence, dipoles and free electrons, 19
dielectric constant, 17
direct allowed transition, 25–27
direct forbidden transition, 27–28
direct interband transitions, 24–28
first-order Raman scattering, 66, 70
free carrier absorption, 38–39
free carrier dispersion, 19
glide plane, 6
group theory application, 51–54
impurities, 57
indirect allowed transition, 29–31, 42–43
indirect forbidden transition, 31, 43
indirect interband transitions, 28–31
intraband transitions, 24, 35, 37–39
lattice vibration absorption, 44–57
n-type semiconductors, 38
polarization, 17
Rayleigh’s theorem, 57
screw axis, 6
second-order Raman scattering, 70–71
symmetry species and characters, 51–52
transition probability and transition rate, 21–23
transverse wave dispersion, 17–18
various Raman scatterings, 71
solid-state lasers
development, 134
four-level system model, 136–137
fundamentals, vii
semiconductor lasers, 156, 158–159
semiconductor saturable absorber, 161
three-level system model, 135–136
Ti:Sapphire lasers, 145–146, 148–149
Yb:YAG lasers, 145
sound velocities, 72
SP,
space and time integral, 47
spherical aberration, 88
spherical symmetry, 26
spin-coating technique, 188
spin flip transition, 71
split-ring resonator (SRR), 277
spontaneous Raman scattering, 118
sputtering technique, 189
square law, 31
square mean momentum operator, 26
square of the amplitude, 83
SRR,
stair-step-like shape, 104
Stark effect, 102
Stark level manifolds, 145
step-index waveguides, 188, 190
STM,
Stokes scattering
light scattering theory, 61
quantum theory for light scattering, 64–65
Stranski-Krastanov (SK) mode, 251–252
subcontinuous region, 41
subtraction frequency, 70
sum frequency generation (SFG), 110–112
summation, lattice vector, 24
summing frequency, 70
superposition, 83
super-radiation, 118
superscripts, 45
surface-enhanced Raman scattering (SERS), 280, 282
surface plasmonics (SP)
susceptabilities
first-order Raman scattering and crystal symmetry, 66
light scattering theory, 59
microcrystal, 127
single crystal material, 116
third-order nonlinear optics, 120–121
symmetrical Mach-Zehnder (SMZ) all-optical switches, 252, 258
symmetry operations
factor group analysis, 54
symmetry species and characters, 52
symmetry plane, 2
symmetry species and characters, 51–52
synthetic quartz, 88
T
TEM,
TE modes
optical nonlinearity, 260
power carried by guided mode, 175
silica waveguides, 183
slab/planar waveguides, 173–175
three-dimensional optical waveguide structures, 177
tetragonal crystalline system, 15, 92
theories
double layers/multilayers, 213–214
Fresnel coefficients, reflection and transmission, 203–207
fundamentals, 203
materials, thin films, 203–214
thermal conductivity, 134, 139
thermal diffusion technique, 192
thermal expansion coefficient, 88
thin film deposition, 188
thin film materials
characteristics, 221
design, optical filters, 214–218
effective medium theories, 218–219
Fourier transform method, 217–218
Fresnel coefficients, reflection and transmission, 203–207
fundamentals, 199–203, 229, vii
inhomogenous structures, 219
needle method, 216
third nonliner optics, 123
third-order nonlinear optics
coherent anti-Stokes Raman scattering, 122
crystal microclusters, 126–130
four-wave mixing, 122
organic microcrystals, 126–130
self-focusing and self-divergence, 123
semiconductor clusters, 126–130
third-order optical nonlinearity, 258–260
third-order polarization, 109
third power law, 31
third term of scattered light, 61
three-dimensional optical waveguide structures, 176–178
three-level system model, 135–136
3/2 power law, 31
tilde, 83
time and space integral, 47
tin dichlorophthalocyanine film, 128
Ti:Sapphire lasers, 146, 148–149
TM modes
silica waveguides, 183
slab/planar waveguides, 174–175
three-dimensional optical waveguide structures, 177
TO design,
topology optimization (TO) design, 242–243
total effective mass, 40
total reflection, 85
transition matrix element, 24
transition moment, 29
transition probability and transition rate, 21–23, 55
transition rate, 26
transmission electron microscopy (TEM), 155
transmittance
alkali halide crystals, 90
dipole dispersion, 18
glass for ultraviolet region, 89
materials for ultraviolet, visible, and infrared regions, 82–85
optical filter design, 215
optical nonlinearity, 260
quartz, 88
transverse electric field, 19
transverse mode, 56
transverse wave dispersion, 17–18
triclinic crystalline system, 16, 92, 94
trigonal crystalline system, 15, 92
triply degenerated mode, 53–54
tunable lasers, 145
tunneling probability, 182
two-phonon process, 47
Tyndall, John, 57
U
UHV,
ultrafast lasers, 145
ultra-high-Q photonic double-hetero-structure photonic crystal waveguides, 247–248
ultra-high-vacuum (UHV) tunnel, 257
ultraviolet region, 89,
uniaxial crystal
anisotropy, external disturbance, 101
fundamentals, 93
V
vacuum compression, 96
vacuum evaporation technique, 79, 189
valence bands
direct allowed transition, 26
direct interband transitions, 24
indirect allowed transition, 30
indirect interband transition, 28
interband and intraband transitions, 24
semiconductor lasers, 156
vapor-phase epitaxy (VPE), 189–190
various Raman scatterings, 71
Verdet constant, 100
vertical transition, 31
vibronic lasers, 146
visible region, materials,
Voigt effect, 100
VPE,
Vycor glass, 89
W
wavefunctions
factor group analysis, 54
indirect allowed transition, 29
waveguide fabrication, 237, 240–243
waveguides, materials for optical
chemical vapor deposition, 189–190
dip-coating technique, 188
electro-optic waveguides, 183–185
fabrication techniques, 187–190
graded index waveguides, 190–192
ion-exchange technique, 190–192
ion-implantation technique, 192
laser written waveguides, 194
multilayer optical waveguides, 178–183
polymer waveguides, 187, 190–192
power carried by guided mode, 175–176
semiconductor waveguides, 186–187
silica on silicon waveguides, 193
silicon-on-insulator waveguides, 194
silicon oxynitride waveguides, 193
silicon waveguide technology, 193–194
slab/planar waveguides, 168–176
spin-coating technique, 188
sputtering technique, 189
thermal diffusion technique, 192
three-dimensional structures, 176–178
vacuum evaporation technique, 189
wavelength, in vacuum, 84
weak absorption peaks, 49
weak reflection peaks, 49
wetting layer, 252
Winner and Winner-type excitons, 123, 128
Y
Yb:YAG lasers, 145
Z
Zeeman effect, 100
oth order scattering, 61
Zircon, Nd:YVO4 lasers, 139