Index

A

Absorption coefficient, 221

Acceptance angle, 47–49

Acceptor level, 155

AGC, 211

Airy disk, 94–95

Alpha particles, 138–39

Ampere’s law, 15

Amplitude division, 74–77

Amplitude modulator, 113

Analog modulation, 208

Anamorphic prism, 292

Anti-reflecting film, 80–82, 218

APC, 176, 200

Astigmatic lens, 295

Astigmatism, 175

A-to-D conversion, 301

Avalanche photodiode (APD):

construction, 237–39

impact ionization process in, 237–39

multiplication factor, 238–39

B

Balmer, Johann, 11, 141–42

Balmer series, 142–43

Bandgap, 216–18, 153–56

Bandpass filter, 83–85

Bandwidth, 53, 60–61, 263–65, 274–76

Base current, 239–42

BCD, 198–99

Bell, Alexander Graham, 9

BER, 209, 299

Big bang theory, 127

Binary code, 207–09

Biphase-Mark code, 208

Birefringence, 109, 113

Bit, 208–09

Bit period, 209, 306

Bit rate, 209

Blackbody curve, 5, 123–28

Blackbody radiation, 122–25

Bode plot, 276, 325–26

Bohr, Neils, 10, 22, 127, 140

Boltzmann’s distribution, 167–69

Bragg condition, 145

Bulk modulator, 113–15

Bypass capacitor, 298

C

Calcite, 107–09

Candela, 121

Capacitance, 166, 178, 263–65, 267, 273, 275–78

Carbon 14, 25–26

Carrier:

charge, 154–56, 214–18

majority, 154–56

minority, 154–56

Carrier confinement, 157

Carrier lifetime, 177

Cathode rays, 133

Charge density, 221

Charge-to-mass ratio, 135, 137

Chirp, 115, 206

Circularizing optics, 292–93

Circularly polarized, 109–12, 293–94

Cladding, 47–49

CMOS, 194–95, 280

CMR, 278

Common anode, 198–99

Common cathode, 198–99

Compact disc player:

actuator, 291–92

anamorphic prism, 292

astigmatic lens, 295

circularizing optics, 292–93

diffraction grating, 100–01, 294–95

DVD, 292

focusing, 295–96

numerical aperture, 98, 294

optical path (diagram of), 293

polarizing beam splitter, 293–95

spot size, 98, 294

tracking, 294

Compton, Arthur, 11

Conduction band, 154–55

Conductor, 152–53

Cosmic Background Explorer (COBE), 128

Cosmic rays, 25

Core, 47–49

Corpuscular theory, 8

Coulomb’s law, 139

Coupling efficiency, 181, 245–47

Covalent bonding, 153–55

Critical angle, 35–36, 47

CTR, 245–47

Curl, 15

Current-to-voltage transfer curve, 260

Cut-off wavelength, 219

D

D* (specific detectivity), 229

Dark noise, 226–29

Darlington transistor, 192

Davission, C.J., 144

De Broglie, Louis, 144

Decibel, 54–56, 58

dBm, 55, 58, 63

Depletion depth, 221–23

Depletion region, 221–23

Derivative, 15

Detectivity (D), 229

Detectors:

cadmium selenide, 251–53

cadmium sulfide, 251–53

germanium, 217, 219–20

indium gallium arsenide, 217

lead selenide, 248–49

lead sulfide, 248–49

mercury cadmium telluride, 250–51

silicon, 214–20

Diffraction:

Fraunhofer, 93–94

Fresnel, 93–94

multiple-slit, 65, 98–100

single-slit, 88–94

Diffraction grating, 100–01, 145, 147–48

Diffusion current, 223–24

Digital modulation, 208–09

Diode laser:

construction, 169–73

drive circuit, 201, 204

far field emission pattern, 174–75

modulation of, 179–80

modulation index, 206

monitoring photodiode, 175–76, 200, 203

optical amplification, 166–69

optical power, 174–75, 202–05

output linearity, 204–05, 208

pn junction, 157, 170

polarization ratio, 175

precautions when using, 200

radiant intensity vs. forward current, 172, 176

relative intensity vs. wavelength, 173

spectral width, 173

temperature effects, 175

threshold conditions, 172, 173–74

Direct bandgap, 156, 158

Dispersion:

in graded-index fiber, 52, 58

in single mode fiber, 54, 58

in step-index fiber, 51

intramodal, 59

material, 59–60

modal, 53, 58–59

waveguide, 62

Donor level, 154

Dopants, 154–55

Duty cycle, 164–65, 193

DVD, 12, 292

E

Einstein, Albert, 11, 22, 128

Electric charge density, 16

Electric force, 134

Electromagnetic force, 17

Electromagnetic shielding, 279, 286

Electromagnetic waves, 11, 22

Electron volt, 25, 219

Electron waves, 144–46

Electronic aperturing, 302

Electro-Optic modulator, 112–15

Electrostatic coupling, 277–79

Electrostatic shield, 277–78, 299

EMI, 277–81, 299–300

Emission lines, 10, 141–43, 148

Energy band diagram, 155

Evanson K.M., 23

Extraordinary ray, 108, 112

F

Fabry-Perot etalon, 78

Fabry-Perot interferometer, 77–80, 169–72, 203

Faraday, Michael, 15

Far field emission pattern, 164, 175

Feedback loop, 273–74, 279

Feedback resistor, 271–72, 276, 283

FET type op-amp, 268, 270

Feynman, Richard, 132

Films:

anti-reflecting, 80–82

thin, 80–82

Finesse, 76–77

Focal point, 39–45

Forward current, 177, 179, 190–92

Forward voltage, 178, 190–92

Fresnel, Augustin, 8, 88

Fresnel reflection, 181–83, 304–06

Fringes, 67–69, 71–73

FSR, 78–79

FTIR, 250

FWHM, 82–83, 160

G

Gabor, Denis, 102

Gain coefficient, 170–71

Gain peaking, 273

Gamma rays, 26

Gauss’ law, 16, 27, 221

Gaussian distribution, 59

Germer, L.H., 144

Glan type prism, 112

Graded-index fiber, 49, 52–53

Gravity, 17

Ground plane, 282, 299

H

Hawking, Stephen, 9

Herschel, William, 9

Heterojunction, 157–58

Hologram, 102–04

Holography, 102–04

Homogeneous wave equation, 50

Homojunction, 157

Huygens, Christiaan, 8, 88, 107

Huygens–Fresnel principle, 88

Hybrid amplifier, 282–85, 289–90

I

Illuminance, 122

Image distance, 36–40, 45

Impact ionization, 237–38

Index of refraction, 23–24, 32–34

Indirect bandgap, 156, 158

Insulator, 152–53

Integrated amplifier/photodiode:

applications, 283–85, 289–90, 296–303

circuit configurations, 285

construction, 282–85

Integrated–Optic modulator, 115–17

Intensity modulation, 115, 191–93, 201–07

Interference:

by amplitude division, 74–77

double beam, 65–67

filter, 82–85

multiple beam, 65–67

by wavefront division, 65–70

Internal reflection, 34–36, 47–48

Intersymbol interference, 306

Intramodal dispersion, 59

Intrinsic material, 154, 215

Intrinsic region, 215–16, 219, 221–23

Inverting amplifier, 271, 323

I/O ports, 280, 299

IrDA, 210–212, 296–300

Irradiance, 122

J

Jeans, Sir James, 125

Junction capacitance, 225, 230, 263–65, 267, 273–75

Junction temperature, 165–66, 191

K

Kao, Charles K., 12

KDP, 112–14

L

Lambertian pattern, 181

Lasing, 172–73, 202

Lattice:

constant, 157

structure, 154–57

Laws of reflection, 31–36, 46

Laws of refraction, 31–34, 46

LDR, 215

LED:

capacitance, 166, 177

carrier lifetime, 177

construction, 158–62

current vs. voltage curve, 190

displays, 197–99

drive circuits, 177, 192–97

far field emission patterns, 163–64, 210

frequency response, 177–79, 197

FWHM, 160

GaAs, 159

GaAlAs, 159, 184–85

internal capacitance, 166, 177, 197

junction temperature, 165–66, 191

loss mechanisms in the, 161–62

modulation of, 176–79, 192–97

optical power, 162–63

pn junction, 157–59

pulse handling capability, 164–65

radiant intensity vs. forward current, 163

relative spectral emission, 160, 162–63

temperature effects, 165–66, 191

used in IrDA devices, 210–12

LED display, 197–99

LED driver, 177, 192–97

Lens, 40–45

Line coding, 207–10

Linear polarization, 106–07

Link access, 212

Link protocol, 212

Lithium niobate, 112–17

Load resistor, 262–65, 267–70, 275

Lord Rayleigh, 125

Lumen, 120

Luminance, 121

Luminous emittance, 120

Luminous flux, 120

Luminous intensity, 120, 199

Lux, 122

Lyman series, 142–43

M

Mach-Zehnder interferometer, 116

Maiman, Theodore H., 11

Manchester code, 208

Material dispersion, 59–60, 306–07

Maxima, 67–69, 90–93

Maxwell, James Clerk, 9, 15

Maxwell’s equations, 4, 15–16

Michelson, A.A., 14–15

Microball lens, 182

Microwaves, 26

Millikan, Robert, A, 135

Millikan oil drop experiment, 135–37

Minima, 67–69, 90–93

Modal dispersion, 53, 58–59, 306–07

Modes, 50–53

Modulation, 176–80, 192–97, 201–08

Monitoring photodiode, 175–76, 203

Monochromatic light, 89, 163

Morley, E.W., 14

MOS, 194

Multimode fiber, 49–53, 57–61

Multivibrator, 195–96

Mutual capacitance, 277–79

Mutually coherent, 66

N

NAND gate, 195

NEP, 229

Newton, Isaac, 8, 9, 87

Newton’s second law, 134

Noninverting input, 268, 324

NPN transistor, 239–40

NRZ code, 207–08, 306

Nuclear force, 17

Numerical aperture, 48–49, 97, 98, 181, 294

O

Object distance, 36–40, 45

Optical axis, 37–38, 40, 43–44

Optical confinement, 157

Optical fiber:

attenuation measurements, 54–58, 304–07

bandwidth, 53, 60–61, 306–07

bandwidth-distance product, 60, 307

cladding, 47–49

core, 47–49

dispersion in (see dispersion)

graded-index, 52–53

multimode, 49–53, 57–61

order of modes in, 52–53

refractive index profile, 49, 52

single mode, 49, 53–54, 62

sizes of, 49–50

step-index, 49–52

Optical spectrum, 25–26

Optically anisotropic, 108

Optically isotropic, 107

Optocoupler:

circuits, 245–47, 321

construction, 244–45

coupling efficiency, 245–47

CTR, 245–47

resistor to base-emitter, 246–47

Ordinary ray, 108, 112

OTDR, 304–06

P

Parasitic capacitance, 275–76

Paschen series, 142–43

Penzias, Arno, 128

Period, 19, 165, 193, 196

Periodic Table of the Elements (partial), 153

Permeability, 15, 22

Permittivity, 16, 22

Phase compensation, 273–76

Phase velocity, 19

Phasor, 72

Phonon, 156

Photoconductive mode, 229–32, 262–63, 268–70

Photoconductive cell:

construction, 251–52

light history, 252

resistance vs. illumination curve, 254

response time curve, 254

spectral response, 254

Photocurrent, 218–20, 261–65

Photodiode:

absorption coefficient, 221

construction, 214–17

cutoff wavelength, 219

depletion region, 221–23

diffusion current, 223–24

equivalent circuit, 230

frequency response, 220–26, 231–36, 274–76

germanium, 217, 219–20

indium gallium arsenide (InGaAs), 217

intrinsic region, 215–16, 219, 221–23

junction capacitance, 225, 230, 263, 267, 272

package, 266

photoconductive mode, 229–32, 262–63, 268–70

photovoltaic mode, 229–30, 265, 270–72

pin type, 216–26

planar diffusion type, 214–16

pn junction, 214–16

quantum efficiency, 218, 267

radiant sensitive area, 222, 229, 232, 266

response time, 220–26, 231–36

responsivity, 220

rise time measurement, 231–36

short circuit current, 260–61

shunt resistance, 230, 261, 275

spectral response, 217, 266

transit time, 220–221

voltage-current transfer curve, 260

Photodiode noise:

dark, 226–29, 267

leakage current, 226–27, 261

root mean square sum, 227

shot, 227

thermal, 227

Photoelectric effect, 128–31

Photometry, 119

Photon, 140, 156–60, 215–20, 308

Photoresponse, 219–20

Phototransistor:

amplification in, 239

circuits, 240, 242

construction, 239–40

current-voltage characteristic curves, 241

dc current gain, h_FE, 239

light sensitive switch, 242

response time, 242–44

Photovoltaic mode, 229–30, 265, 270–72

Physical layer, 210

Pits, 293–95

Planck, Max, 10, 22, 125–27

Planck’s constant, 127, 140–45

Poisson distribution, 226

Polarization:

circularly, 109–11

linearly, 108

Polarization ratio, 175

Polarizer, 107

Polarizing prism, 293–95

Polychromatic, 24

Population inversion, 168–69

Pulse spreading, 52–53, 306

Pumping, 169

Q

Quadrant detector, 295–96

Quantization of electric charge, 136–37

Quantum efficiency, 218, 267

Quantum electrodynamics, 22

Quantum theory, 22, 127

Quarter-wave plate, 110–11, 293

R

Radian, 19

Radiance, 121

Radiant emittance, 120

Radiant intensity, 120, 163, 173, 181

Radiant power, 120

Radiant sensitive area, 229, 232, 266

Radio waves, 26

Radioactive isotope, 25

Rayleigh criterion, 95–96

Rayleigh scattering, 56, 304

RC time constant, 225, 263–65, 267

Receiver:

bandwidth, 263–65, 274–76

bode plot, 276, 325–26

circuit board layout, 274, 277–82

circuits using op-amps, 268–79

common mode rejection, 278

compensation capacitor, 273, 276

electromagnetic interference, 277–81

electrostatic shielding, 277–78

equivalent circuit, 275

feedback pole, 272–73

feedback resistor, 271–72, 276, 283

frequency response, 274–76

gain peaking, 273

inverting configuration, 271, 323

lens throughput, 285–88

load resistor, 262–65, 267–70, 275

mutual capacitance, 277–79

mutual inductance, 279

noise, 272–74

noninverting configuration, 268, 324

optical considerations, 285–88

parasitic capacitance, 275–76

phase compensation, 273–76

photoconductive mode, 229–32, 262–63, 268–70

photovoltaic mode, 229–30, 265, 270–72

signal-to-noise ratio, 229, 283

virtual ground, 271, 323

Reflection:

Fresnel, 161

laws of, 31–36, 46

mirrors, 36–40

specular, 31

total internal, 34–36, 47–48

Refractive index, 23–24, 32–34

Relative spectral emission, 162–63, 173

Resistor, 191–99, 230–31, 262–65, 267–69

RF, 279

RF shield, 279

Ritter, J.W., 9

Roemer, Ole, 22

Rutherford, Ernest, 138–39

RZ code, 207–08

S

Semiconductor, 153–58

Series resistance, 230

Shot noise, 227

Shunt resistance, 230

Single mode fiber, 49, 53–54, 62

Skin effect, 1

Snell’slaw, 4, 31–33

Solid angle, 120–21

Spectral sensitivity, 266

Spectroscope, 4, 147–50

Speed of light, 22–24, 32–34

Spontaneous emission, 156, 167–68, 203

Spontaneous lifetime, 177, 203

Stefan-Boltzmann law, 327–28

Steradian, 120–21

Stimulated emission, 167–69

Stimulated lifetime, 179

Symbol, 207–09

T

T-network, 274

Thermal noise, 227

Thermodynamic equilibrium, 123–24, 167–69

Thin films, 80–82

Thomson, G.P., 145

Thomson, J.J., 133

Threshold current, 172, 202–03

Throughput, 285–88

Tracking, 294

Transient protection, 205

Transistor, 192–93

Transmitter, 192–97, 201–07

TTL, 193–94

U

Ultraviolet, 26

Ultraviolet catastrophe, 125

V

Valence band, 152–56

Vector, 72

Virtual ground, 271, 323

Voltage isolation, 244

W

Waveguide dispersion, 62

Wavelength, 16, 23–25, 57, 68–71, 79, 90–100, 125–26, 144–50, 160, 163, 214–20, 248–53

Weak force, 17

Wein, Wilhelm, 125

Wilson, Robert, 128

Work function, 129–31

X

X-ray diffraction, 144–45

X-rays, 26

Y

Young, Thomas, 9, 64–66, 70, 87

Young’s double-slit experiment, 64–71