- Cover
- Title Page
- Copyright
- Preface
- Chapter 1: Silicon and Silicon Carbide Oxidation
- 1.1. Introduction
- 1.2. Overview of the various oxidation techniques
- 1.3. Some physical properties of silica
- 1.4. Equations of atomic transport during oxidation
- 1.5. Is it possible to identify the transport mechanisms taking place during oxidation?
- 1.5.1. Identification using isotopic labeling techniques
- 1.5.2. Important results for the thermal oxidation of silicon under dry O2
- 1.5.3. Important results for wet thermal oxidation
- 1.5.4. Conclusions on the atomic transport mechanisms during silicon thermal oxidation
- 1.5.5. Experimental results and conclusions on the transport mechanisms during the anodic oxidation of silicon
- 1.5.6. Important experimental results from dry SiC thermal oxidation
- 1.6. Transport equations in the case of thermal oxidation
- 1.7. Deal and Grove theory of thermal oxidation
- 1.7.1. Flux calculation
- 1.7.2. Growth kinetics equations
- 1.7.3. Remarks on the fluctuations of the oxidation constants kP and kL
- 1.7.4. Determination of the oxidation parameters from experimental results
- 1.7.5. Confrontation of the Deal and Grove theory with experimental results
- 1.7.6. Conclusions on the Deal and Grove theory
- 1.8. Theory of thermal oxidation under water vapor of silicon
- 1.9. Kinetics of growth in O2 for oxide films < 30 nm
- 1.10. Fluctuations of the oxidation constants under experimental conditions
- 1.11. Conclusion
- 1.12. Bibliography
- Chapter 2: Ion Implantation
- Chapter 3: Dopant Diffusion: Modeling and Technological Challenges
- 3.1. Introduction
- 3.2. Diffusion in solids
- 3.3. Dopant diffusion in single-crystal silicon
- 3.4. Examples of associated engineering problems
- 3.5. Dopant diffusion in germanium
- 3.6. Conclusion
- 3.7. Bibliography
- Chapter 4: Epitaxy of Strained Si/Si1-x Gex Heterostructures
- 4.1. Introduction
- 4.2. Engineering of the pMOSFET transistor channel using pseudomorphic SiGe layers
- 4.3. Engineering of the nMOSFET transistor channel using pseudomorphic Si1-yCy layers; SiGeC diffusion barriers
- 4.4. Epitaxy of Si raised sources and drains on ultra-thin SOI substrates
- 4.5. Epitaxy of recessed and raised SiGe:B sources and drains on ultra-thin SOI and SON substrates
- 4.6. Virtual SiGe substrates: fabrication of sSOI substrates and of dual c-Ge / t-Si channels
- 4.6.1. Introduction
- 4.6.2. Growth and structural properties of virtual SiGe substrates
- 4.6.3. Growth and structural properties of tensily-strained Si layers on SiGe virtual substrates
- 4.6.4. Fabrication of sSOI and XsSOI substrates & transport properties
- 4.6.5. c-Ge/t-Si dual channels on Si0.5Ge0.5 virtual substrates
- 4.7. Thin or thick layers of pure Ge on Si for nano and opto-electronics
- 4.8. Devices based on sacrificial layers of SiGe
- 4.9. Conclusions and prospects
- 4.10. Bibliography
- List of Authors
- Index
List of Authors
Annie BAUDRANT
CEA LETI
Grenoble
France
Jean-Jacques GANEM
Institut des nanosciences
CEMIP
Paris
France
Jean-Jacques GROB
InESS
Strasbourg
France
Jean-Michel HARTMANN
CEA LETI
Grenoble
France
Daniel MATHIOT
InESS
Strasbourg
France
Isabelle TRIMAILLE
CEMIP
Paris
France
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