| AC |
Alternating Current |
| ACPR |
Adjacent Channel Power Ratio |
| ADP |
Ammonium dihydrogen phosphate |
| ADS |
Advanced Design System |
| AlGaAs |
Aluminum gallium arsenide |
| AM |
Amplitude Modulation |
| AM-DD |
Amplitude Modulation — Direct Detection |
| ASE |
Amplified Spontaneous Emission |
| BER |
Bit Error Rate |
| BH |
Buried Heterostructure |
| BiCMOS |
Bipolar Complementary Metal Oxide Semiconductor |
| BILBAO |
Borne d’infrastructures large bande avec accès optique (Wideband infrastructure base with optical access) |
| CAD |
Computer-aided design |
| CdS |
Cadmium sulfide |
| CEA-Leti |
Commissariat à l’énergie atomique (Atomic energy commission) |
| CMOS |
Complementary metal-oxide-semiconductor |
| CNAM |
Conservatoire national des arts et métiers |
| CPW |
Coplanar waveguide |
| DBR |
Distributed Bragg reflector |
| DC |
Direct current |
| DD-MZM |
Dual drive-MZM |
| DFA |
Doped fiber amplifier |
| DFB |
Distributed feedback laser |
| DFT |
Discrete Fourier transform |
| E/O |
Electric/optic |
| EAM |
Electro-absorption modulator |
| EDFA |
Erbium-doped fiber amplifier |
| EEL |
Edge emitting laser |
| EML |
Electro-absorption modulated laser |
| EMT |
Electromagnetic transverse |
| EOM |
Electro-optic modulator |
| ER |
Extinction ratio |
| ESYCOM |
Equipe systèmes de communications et microsystèmes (Communications and microsystems team) |
| ET |
Electric transverse |
| EVM |
Error vector magnitude |
| FCC |
Federal communications commission |
| FET |
Field-effect transistor |
| FKE |
Franz-Keldysh effect |
| FT R&D |
France Telecom Research & Development |
| GaAs |
Galium arsenide |
| GaP |
Galium phosphide |
| Ge |
Germanium |
| GRINSCH |
Graded index separate confinement heterostructure |
| HB |
Harmonic balance |
| HBT |
Heterojunction bipolar transistor |
| HEMT |
High electron mobility transistor |
| HFET |
Heterojunction field-effect transistor |
| HFSS |
High frequency simulation system |
| HPT |
Heterojunction bipolar phototransistor |
| IDFT |
Inverse discrete Fourier transform |
| IM-DD |
Intensity modulation-direct detection |
| IMEP |
Institut de microélectronique, électromagnétisme et optique (Institute of microelectronics, electromagnetism and optics) |
| InAs |
Indium arsenide |
| InGaAs |
Indium gallium arsenide |
| InGaP |
Indium gallium phosphide |
| InP |
Indium phosphide |
| IR-UWB |
Impulse Radio — Ultra Wideband |
| KDP |
Potassium dihydrogen phosphate |
| LAHC |
Laboratoire d’hyperfréquences et de caractérisation (hyperfrequency and characterization laboratory) |
| LASER |
Light amplifier by stimulated emission of radiation |
| LF |
Low frequency |
| LiNbO3 |
Lithium niobate |
| LiTaO3 |
Lithium tantalate |
| MAG |
Maximum available gain |
| MASER |
Microwave amplifier by stimulated emission of radiation |
| MB-OFDM |
Multi-band — orthogonal frequency division modulation |
| MB-OOK |
Multi-band on off keying |
| MEMS |
Micro-electro-mechanical systems |
| MESFET |
Metal semiconductor field-effect transistor |
| MMIC |
Monolithic microwave integrated circuit |
| MODFET |
Modulation-doped field-effect transistor |
| MQW-EAM |
Multi-quantum well-EAM |
| MSM |
Metal semiconductor metal |
| MZM |
Modulator Mach-Zehnder |
| Nd:YAG |
Neodymium-doped yttrium aluminum garnet |
| NF |
Noise factor, Noise figure |
| nOI |
n order intermodulation |
| nOIP |
n order intercept point |
| NRA |
National Research Agency |
| O/E |
Optic/electric |
| OEIC |
Optoelectronic integrated circuit |
| OEMMIC |
Optoelectronic millimeter-wave monolithic integrated circuit |
| OFDM |
Orthogonal frequency division modulation |
| PDFA |
Praseodymium-doped fiber amplifier |
| PDG |
Biased-dependent gain |
| PM |
Phase modulation |
| PMMA |
Poly(methyl methacrylate) |
| PRBS |
Pseudo-random bit sequence |
| PSK |
Phase-shift keying |
| QAM |
Quadrature amplitude modulation |
| QCSE |
Quantum confined stark effect |
| QW-EAM |
Quantum well-EAM |
| RCEPD |
Resonant cavity enhanced photodetectors |
| RFT |
Rapid Fourier transform |
| RIN |
Relative intensity noise |
| RoF |
Radio over fiber |
| SD-MZM |
Single drive -MZM |
| Si |
Silicon |
| SiGe |
Silicon-germanium |
| SiMOX |
Separation by implantation of oxygen |
| SiO2 |
Silicon dioxide |
| SOA |
Semiconductor optical amplifier |
| SOC |
System on a chip |
| SOI |
Substrate on insulator |
| TDFA |
Thulium-doped fiber amplifier |
| TEGFET |
Two-dimensional electron gas field-effect transistor |
| TW-MZM |
Travelling wave-MZM |
| UTC |
Uni-travelling carrier |
| UWB |
Ultra-wideband |
| VCSEL |
Vertical-cavity surface-emitting laser |
| VCSOA |
Vertical-cavity semiconductor optical amplifier |
| VMDP |
Velocity matched distributed photodetector |
| WDM |
Wavelength division multiplexing |
| YDFA |
Ytterbium-doped fiber amplifier |
| ZnS |
Zinc sulfide |
