A
absorption
active zone
amplifier
amplitude modulation
attenuation
available gain
B
birefringence
Bragg mirrors
buried heterostructure (BH)
C
CAD laser model
carrier
density
chromatic dispersion
cleaved surfaces
confinement factor
D
direct modulation
distributed
amplifier
Bragg reflector laser (DBR)
feedback laser (DFB)
Doppler effect
double sideband
E
EAM
edge emitting laser (EEL)
electro-optical
EML structure
epitaxy
external modulation
F
Fabry-Perot laser
Franz-Keldysh effect
G
GaAs semiconductor
gain
graded
index fiber
index plastic fibers
gradient index
GRINSCH
H
heterojunction
bipolar phototransistor
bipolar transistor
homojunction bipolar transistor
I, K
InP/InGaAs
intermodal dispersion
intermodulation
KDP
L
laser
lattice matching
LiNbO3
low
frequency noise
noise amplifier
M
Mach-Zehnder
maximum
frequency
gain
metamorphic layer
microwave carrier
modal analysis
model
modulator
MSM diode
multimode
multi-wavelength optical system
MZM
N
narrowband amplifier
noise factor
noises
nonlinearities
O
OFDM
OOK
optical
carrier
cavity photodiode
gain
phase difference
spectrum
P
phase noise
photodetector
photodiode
photon conservation
photonic link
phototransistor
p-i-n diode
plastic
Pockels effect
power gain
propagation modes
pseudomorphic layer
R
resonant optical
cavity
cavity-enhanced photodetector
ridge laser
RIN noise
S
semiconductor laser
shot noise
Si/SiGe
simulation
single
mode
sideband
S-parameters
spectral purity
degradation
spontaneous emission
Stark effect
step-index fibers
stimulated emission
T, U, V
thermal noise
transducer gain
transimpedance amplifier
ultra-wideband
UTC photodiode
VCSEL
18.221.66.185