In converters so far, we have discussed hard-switching in the switching power-pole, as described in Chapter 2. In this chapter, we will look at the problems associated with hard-switching and some of the practical circuits where this problem can be minimized with soft-switching.
Figure 10.1a shows the switching power-pole, and Figure 10.1b shows the hard-switching waveforms, which were discussed in Chapter 2. Because of the simultaneous high voltage and high current associated with the transistor during the switching transition, the switching power losses in the transistor increase linearly proportional to the switching frequency and the sum of the times and , shown in Figure 10.1b, assuming an ideal diode,
In hard-switching converters, in addition to the switching power losses decreasing the energy efficiency, the other problems are device stresses, thermal management of power losses, and electromagnetic interference resulting from high di/dt and dv/dt due to fast transitions in the converter voltages and currents. The above problems are exacerbated by the stray capacitances and leakage inductances associated with the converter layout and the components.
In order to reduce the overall converter size while maintaining high energy efficiency, the trend is to design DC-DC converters operating at as high a switching frequency as possible (typically 100–200 kHz in small power ratings), using fast-switching MOSFETs. At high switching frequency, the switching power losses become unacceptable if hard-switching is used, and hence soft-switching is often employed, as briefly described in this chapter.
The problems described above associated with hard-switching can be minimized by means of the following:
It is always recommended to have a layout to reduce stray capacitances and inductances. Snubbers consist of passive elements (R, C, and possibly a diode) to reduce di/dt and dv/dt during the switching transient, by shaping the switching trajectory. The trend in modern power electronics is to use snubbers only in transformer-isolated DC-DC converters, where the leakage inductance associated with the high-frequency transformer can be substantial, in spite of a good circuit layout. Generally, snubbers do not reduce the overall losses; rather, they shift some of the switching losses in the transistor to the snubber resistor. A detailed discussion of snubbers is beyond the scope of this book; the interested reader is advised to refer to [1].
By controlling the gate voltage of MOSFETs and IGBTs, it is possible to slow down the turn-on and turn-off speed, thereby resulting in reduced di/dt and dv/dt, at the expense of higher switching losses in the transistor. The above techniques, at best, result in a partial solution to the problems of hard-switching.
However, there are certain topologies and control, as described in the next section, that allow soft-switching that essentially eliminates the drawbacks of hard-switching without creating new problems.
There are many such circuits and control techniques proposed in the literature, most of which may make the problem of EMI and the overall losses worse due to large conduction losses in the switches and other passive components. Avoiding these topologies, only a few soft-switching circuits are practical.
The goal in soft-switching is that the switching transition in the power pole occurs under very favorable conditions, that is, the switching transistor has a zero voltage and/or zero current associated with it. Based on these conditions, the soft-switching circuits can be classified as follows:
We will consider only the converter circuits using MOSFETs, which result in ZVS (zero-voltage switching). The reason is that, based on Equation 10.1, soft-switching is of interest at high switching frequencies where MOSFETs are used. In MOSFETs operating at high switching frequencies, a significant reduction of switching loss is achieved by not dissipating the charge associated with the junction capacitance inside the MOSFET each time it turns on. This implies that for meaningful soft-switching, the MOSFETs should be turned on under a zero-voltage switching (ZVS) condition. As we will see shortly, the turn-off also occurs at ZVS.
To illustrate the ZVS principle, the intrinsic anti-parallel diode of the MOSFET is shown as being distinct in Figures 10.2a and 10.2b, where a capacitor is used in parallel. This MOSFET is connected in a circuit such that before applying the gate voltage to turn the MOSFET on, the switch voltage is brought to zero, and the anti-parallel diode is conducting, as shown in Figure 10.2a. This results in an ideal lossless turn-on at ZVS. At turn-off, as shown in Figure 10.2b, the capacitor across the switch results in an essentially ZVS turn-off where the current through the MOSFET channel is removed while the voltage across the device remains small (essentially zero) due to the parallel capacitor. This ZVS principle is illustrated by modifying the synchronous-rectified buck DC-DC converter, as discussed below.
As discussed in section 3.10 (Chapter 3), synchronous-rectified buck DC-DC converters are used in applications where the output voltage is very low. Figure 10.3a shows a synchronous-rectified DC-DC converter where the diode has been replaced by another MOSFET, and the two MOSFETs are provided complementary gate signals and . The waveforms associated with this synchronous buck converter are shown in Figure 10.3b, where the inductor is large such that the inductor-current ripple is small (shown by the solid curve in Figure 10.3b), and the inductor current remains positive in the direction shown in Figure 10.3a in the continuous conduction mode.
To achieve ZVS, the circuit of Figure 10.3a is modified, as shown in Figure 10.4a, by showing the internal diode of the MOSFET explicitly and adding small external capacitances (in addition to the junction capacitances inherent in MOSFETs). The inductance value in this circuit is chosen to be much smaller such that the inductor current has a waveform shown dotted in Figure 10.3b with a large ripple and such that the current is both positive and negative during every switching cycle.
We will consider the transition at time labeled in Figure 10.3b and Figure 10.4b, when the inductor current is at its peak in Figure 10.4a. The gate signal of the transistor , which is initially conducting , goes to zero, while remains zero, as shown in Figure 10.4b. The transition time during which the current transfers from to is very short, and it is reasonable to assume for discussion purposes that the inductor current remains constant at , as shown in Figure 10.5a.
In the circuit of Figure 10.5a with both and equal to zero, initially and , where from Kirchhoff’s law, these two voltages must add to the input voltage,
As the current through declines, equal and opposite currents flow through the two capacitors in Figure 10.5a, which can be derived from Equation 10.2 as follows, assuming equal capacitances : differentiating both sides of Equation 10.2 and multiplying both sides by ,
As the current through declines, a positive causes to rise from , and a negative causes to decline from its initial value of . If this voltage transition happens slowly compared to the current fall time of the MOSFET , then the turn-off of is achieved at essentially zero voltage (ZVS). After the current through has gone to zero, applying Kirchhoff’s current law in Figure 10.5a and using Equation 10.4 results in
In Figure 10.5a, during the turn-off transition of , rises to , and declines to . The voltage cannot become negative because of the diode (assuming an ideal diode with zero forward voltage drop), which begins to conduct the entire in Figure 10.5b, marking the ZVS turn-off of .
Once begins to conduct, the voltage is zero across , which is applied a gate signal to turn on, as shown in Figure 10.4b, thus resulting in the ZVS turn-on of . Subsequently, the entire inductor current begins to flow through the channel of in Figure 10.5b. The important item to note here is that the gate signal to is appropriately delayed by an interval , shown in Figure 10.4b, making sure that is applied after begins to conduct.
The next half-cycle in this converter is similar to the ZVS turn-off of , followed by the ZVS turn-on of , facilitated by the negative peak of the inductor current.
Although this buck converter results in ZVS turn-on and turn-off of both transistors, the inductor current has a large ripple, which will also make the size of the filter capacitor large since it has to carry the inductor current ripple. In order to make this circuit practical, the overall ripple that the output capacitor has to carry can be made much smaller (similar ripple reduction occurs in the current drawn from the input source) by an interleaving of two or more such converters, as discussed in section 3.11 (Chapter 3). Another advantage of this converter is its ability to respond rapidly to load change.
Another practical soft-switching technology is the phase-shift modulated (PSM) DC-DC converter, shown in Figure 10.6a. It is a variation of the PWM DC-DC converters discussed in Chapter 8.
The switches in each power pole of the PSM converter operate at nearly 50% duty ratio, and the regulation of the output voltage is provided by shifting the output of one switching power-pole with respect to the other, as shown in Figure 10.6b, to control the zero-voltage intervals in the transformer primary voltage .
To provide the ZVS turn-on and turn-off of switches, a capacitor is placed across each switch. This topology makes use of the transformer leakage inductance and the magnetizing current.
It is possible to achieve soft-switching in converters for induction heating and compact fluorescent lamps by using a half-bridge converter with soft-switching, as shown in Figure 10.7.
This converter consists of two DC capacitors that establish the midpoint such that each capacitor has across them. The load in this generic circuit is represented by a resistance R in series with the resonant circuit elements and , which have a resonant frequency
The switching frequency is selected to be greater than the resonant frequency:
In Figure 10.7, two switches are switched with essentially 50% duty ratio. This results in that has a square waveform, as shown in Figure 10.8. Because the switching frequency in the resonant circuit is higher than the resonant frequency, this circuit appears inductive at the switching frequency. Therefore, the current i lags behind the voltage waveform, as shown in Figure 10.8. Since the impedance of the resonant circuit will be much higher at the harmonic frequency of the input voltage, the current will essentially have a sinusoidal waveform, as shown in Figure 10.8.
At t = 0, is forced to turn off, essentially at ZVS due to lossless capacitors, and after a brief period during which capacitor voltages change, the current begins to flow through . As soon as begins to conduct, is gated on, and the current can flow through it when it becomes positive. At , is forced to turn off at essentially ZVS, and the next half-cycle ensues.
A detailed description of such resonant circuits is provided in [1, 2].
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