Acknowledgments

In the area of ESD and latchup design, I would like to acknowledge the years of support from the SEMATECH, the ESD Association, the IEEE, and the JEDEC organizations. I would like to thank the IBM Corporation, Qimonda, Taiwan Semiconductor Manufacturing Corporation (TSMC), and the Intersil Corporation. This text comes from 30 years of working with bipolar memory, DRAM memory, SRAM, NVRAMs, microprocessors, ASICs, mixed-voltage, mixed-signal, RF, and power applications. I was fortunate to work in a wide number of technology teams, and with a wide breadth of customers. I was very fortunate to work in bipolar memory, CMOS DRAM, CMOS logic, ASICs, silicon on insulator (SOI), and silicon germanium (SiGe) from 1 μm to 45 nm technologies. I was very fortunate to be a member of talented technology and design teams that were innovative, intelligent, and inventive. This provided the opportunity to explore experimental concepts, and try new ideas in ESD design in applications and products.

I would like to thank the institutions that allowed me to teach and lecture at conferences, symposiums, industry, and universities; this gave me the motivation to develop the texts. I would like to thank faculty at the following universities: MIT, Stanford University, University of Central Florida (UCF), University Illinois Urbana-Champaign (UIUC), University of California Riverside (UCR), University of Buffalo, National Chiao Tung University (NCTU), Tsin Hua University, National Technical University of Science and Technology (NTUST), National University of Singapore (NUS), Nanyang Technical University (NTU), Beijing University, Fudan University, Shanghai Jiao Tung University, Zheijang University, Universiti Sains Malaysia, Chulalongkorn University, Mahanakorn University, Kasetsart University, Thammasat University, and Mapua Institute of Technology.

I would like to thank – for the years of support and the opportunity to provide lectures, invited talks, and tutorials – the Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium, the International Reliability Physics Symposium (IRPS), the Taiwan Electrostatic Discharge Conference (T-ESDC), the International Electron Device Meeting (IEDM), the International Conference on Solid-State and Integrated Circuit Technology (ICSICT), and the International Physical and Failure Analysis (IPFA) in Singapore.

I would like to thank my many friends for 20 years in the ESD profession – Professor Ming Dou Ker, Professor J.J. Liou, Professor Albert Wang, Professor Elyse Rosenbaum, Timothy J. Maloney, Charvaka Duvvury, Eugene Worley, Robert Ashton, Yehuda Smooha, Vladislav Vashchenko, Ann Concannon, Albert Wallash, Vessilin Vassilev, Warren Anderson, Marie Denison, Alan Righter, Andrew Olney, Bruce Atwood, Jon Barth, Evan Grund, David Bennett, Tom Meuse, Michael Hopkins, Yoon Huh, Keichi Hasegawa, Nathan Peachey, Kathy Muhonen, Augusto Tazzoli, Gaudenzio Menneghesso, Marise BaFleur, Jeremy Smith, Nisha Ram, Swee K. Lau, Tom Diep, Lifang Lou, Stephen Beebe, Michael Chaine, Pee Ya Tan, Theo Smedes, Markus Mergens, Christian Russ, Harold Gossner, Wolfgang Stadler, Ming Hsiang Song, J.C. Tseng, J.H. Lee, Michael Wu, Erin Liao, Jim Vinson, Jean-Michel Tschann, David Swenson, Donn Bellmore, Ed Chase, Doug Smith, W. Greason, Stephen Halperin, Tom Albano, Ted Dangelmayer, Terry Welsher, John Kinnear, and Ron Gibson. I would also like to thank graduate students who are engaged in the study of ESD protection: Tze Wee Chen, Shu Qing Cao, Slavica Malobabic, David Ellis, Blerina Aliaj, and Lin Lin.

I would like to thank the ESD Association office for support in the area of publications, standards developments, and conference activities. I would also like to thank the publisher and staff of John Wiley and Sons, for including the text ESD: Design and Synthesis as part of the ESD book series.

To my children, Aaron Samuel Voldman and Rachel Pesha Voldman, good luck to both of you in the future.

To my wife, Annie Brown Voldman, thank you for the support of years of work.

And to my parents, Carl and Blossom Voldman.

Baruch HaShem (B”H)

Dr Steven H. Voldman
IEEE Fellow