Index

Absorption efficiency, 447

Accelerated life testing, 327

Acoustic scattering, 18, 21

Activation energy, 338

Adjacent channel leakage power (ACP), 401

Alloy barrier effect, 63

Alloy scattering, 21

Anderson and Crowell method, 295

Auger generation, 282

Auger recombination, 248, 298, 330

Avalanche breakdown, 282, 284–285, 306–307, 309

Avalanche effect, 297

Avalanche multiplication, 287, 288, 290, 293–294, 300, 308

Backward Euler method, 259

Ballistic motion, 296, 352

Bandgap narrowing, 11–13, 93, 162, 298, 350

Base ballasting resistor, 319, 320

Base conductivity modulation, 71

Base current reversal, 298

Base pushout, 71–72, 89–90, 119, 122, 297

Base transit time, 76, 80, 111–112, 120, 122, 124, 136, 144–147, 152, 161, 163, 166, 170, 214, 303, 435, 442, 446

Base width modulation effect, 2, 69, 71, 80, 109, 204, 218

Boltzmann statistics, 255

Boltzmann transport equation, 228, 232, 250

Bulk recombination, 54, 56, 103, 205

Burn-in, 338–339

Carrier freeze-out, 80

Charge-control model, 191, 297

Charge-control relation, 191

Charge partitioning method, 265

Chemical vapor deposition (CVD), 14, 32, 34, 45, 158, 361

Coinwell–Weisskopf approximation, 234

Collapse loci, 312

Collapse phenomenon, 306–307

Collector breadown voltage, 39, 123, 142, 149, 296, 300, 389

Collector efficiency, 2, 323, 396

Collector offset voltage, 67–69, 205–206

Collector signal delay, 114–115, 243

Collector space-charge-layer transit time, 112, 120, 123, 152, 170, 303, 387

Collector space-charge-region widening, 90

Collector transit time, 243, 388

Complete ionization, 21

Common-base mode, 383

Common-emitter mode, 383

Conduction band barrier effect, 75, 212, 345

Conduction-band discontinuity, 6, 10, 58, 79, 101

Conduction-band energy gradient, 61

Constant-available-power-gain circles, 406

Constant-noise-figure circles, 406

Continuous-wave (CW), 381

Coulombic scattering, 18–19

Critical thickness, 14–15, 347

Cross-section transmission electron microscope(XTEM), 33

Current collapse, 318

Current crowding, 71–72, 80

Cutoff frequency, 2, 119–120, 122–123, 126, 163, 170, 262–264, 318, 322, 376, 396, 435–436, 455

dc-RF efficiency, 413–414

Depletion approximation, 110, 168

Diffusion effect, 24, 250

Dose-rate effect, 357

Drift-diffusion, 252

Drift-diffusion analysis, 291

Drift-diffusion equation, 251

Drift-diffusion model, 244

Drift-diffusion simulation, 253

Duty cycle 381

DX centers 44, 132

Dynamic hysteresis voltage, 426

Early voltage, 2, 69, 71, 76, 78–79, 82, 84, 86, 88–89, 149, 204, 215, 250, 252, 297, 345, 399–400, 451

Einstein relation, 249

Electromigration, 330–333

Electron cyclotron resonance (ECR) etching, 45

Emitter ballasting resistor, 314–315, 319, 383

Emitter delay, 161, 345, 442

Emitter thermal shunt, 317

Energy balance equation, 255

Energy balance model, 250–251, 253

Energy balance simulation, 252–253

Energy lagging effect, 293

Energy model, 293

Fan-out, 428

Fermi–Dirac statistics, 256

Figure of merit (FOM), 389

Finite element method, 256 (1/f) noise, 3, 129–131, 332, 349, 358–359, 362, 375, 414–415, 419, 421

Forward active mode, 57–58, 69, 205, 215, 318, 335, 341

Forward biased stress effect, 330

Forward collector method, 334

Forward collector stress and mesasure method (FCSAM), 355

Freeze-out effect, 247, 256

Gas-source MBE (GSBME), 27, 29–31, 43, 45–46, 350

Gain-bandwidth product, 2, 449

Gain compression, 404

Gummel method, 257–258

Gummel number, 11, 71 264, 345

Gummel–Poon model, 187, 204–206, 209, 215

h-y ration technique, 219–220

Harmonic balance method, 414

Heavy doping effect, 6, 12, 18, 77, 79

High injection barrier effect, 72–73, 75, 160

High injection effect, 2, 204, 445

Hot carrier, 238, 334, 351

Hot electron, 241, 330, 333, 336, 352–356, 388

Hot hole, 281, 354–356

Hydrodynamic model, 250

Impact ionization, 281–282, 286–288, 290–291, 294–295, 297–298, 308–309

Impurity scattering, 17–18, 20–21

Incomplete ionization, 247

Inelastic collision, 352

Infant mortality, 329

Injection efficiency, 40, 58–59, 61, 124, 166, 203

Input impedance circle method, 219

Input matching network, 397

Input return loss, 408–410

Integral charge-control relation (ICCR), 179–180

Interface recombination, 199–201

Interface traps, 337

Intermodulation distortion, 397, 399–400

Intermodulation intercept point, 399

Intermodulation response, 398–399

Intervalley scattering, 237

Inverse base width modulation effect, 71, 89–90, 152

Inverse Early voltage, 218

Inverse oscillator reflection coefficient, 413

Ionizing radiation, 358, 361

Kirk effect, 183, 243–244, 287, 388

Ledge passivation, 340

Lift-off, 37, 45

Limited reaction processing (LRP), 15, 32

Liquid-phase epitaxy, 1, 24

Local model, 291, 293

Low-dose-rate radiation, 363

Low-harmonic-distortion, 375

Maximum available gain, 383, 384–385

Maximum frequency of oscillation, 120, 123, 126, 149, 385, 387, 396, 455

Mean free path, 353

Mean-time-to-failure (MTTF), 327

Metal-organic chemical vapor deposition (MOCVD), 1, 25–27, 29, 36, 42–43, 46, 56, 103, 339, 350–351, 377

Metal-organic molecular beam epitaxy (MOMBE), 29, 31

Molecular beam epitaxy (MBE), 1, 15, 24–25, 27, 30, 32, 36–37, 40, 42–45, 103, 377

Moll–Ross current relation, 178

Monolithic microwave integrated circuit (MMIC), 376

Monte Carlos simulation, 137, 232, 234–235, 239, 250, 253, 291, 354

Multiquantum wells, 24

Negative different resistance (NDR), 102–103, 318

Newton method, 258

Neutral base recombination, 65, 82, 84, 86, 88–89, 99, 200

Noise figure, 2, 404–410

Noise power, 404–405

Nonequilibrium transport, 294

Nonlocal model, 291, 293

Offset voltage, 328–329, 335, 364

Offset current, 364

Open collector method, 221, 334

Open collector stress and measure (OCSAM), 355

Optical bistability, 450

Optical scattering, 21

Optoelectronic integrated circuits (OEICs), 445

Out-diffusion, 37, 59, 340–342, 345–346, 349, 351

Output return loss, 410

Phase cancellation technique, 219

Phase distortion, 401–402, 404

Phase noise, 2, 412, 415–416, 419–420, 422

Phonon scattering, 17–18

Power-added efficiency, 214, 322, 381–382, 389, 397

Power-delay product, 428, 433–434

Power efficiency, 380, 387, 390, 395–396

Quality factor, 391

Quantum efficiency, 447, 451

Quantum-mechanical effect, 166

Quantum-mechanical reflection, 187

Quantum-mechanical wavelengths, 25

Quantum well, 25–26

Quasi-Fermi level splitting, 65, 67

Quasi-neutral recombination, 97

Quasi-saturation region, 221

Radiation effect, 357–358

Radiation hardness, 2, 364, 366

Rapid thermal chemical vapor deposition (RTCVD), 333, 341

Reactive ion beam etching (RIBE), 38

Reactive ion etching (RIE) 38, 47, 50

Reflection high energy electron diffraction (RHEED), 42, 45

Regression characteristics, 321

Reverse active mode, 57–58, 205

Reverse base current effect, 187, 285, 287

Rutherford backscattering spectrometry (RBS), 23, 33

Scanning electron microscope (SEM), 331

Scattering parameters (s-parameters), 47, 113, 124, 133, 135–136, 214, 223–224, 383, 385, 456

Secondary ion mass spectrometry (SIMS), 21, 33–35

Self-heating effect, 92–93, 95–97, 170–171, 187, 202–204, 206, 208, 212, 251–252, 287, 289–290, 306, 318, 378

Setback layer, 59, 61, 166–167, 169–170, 203–204

Shot noise, 130

Sideband noise, 419

Signal-to-noise ratio, 450

Single event upset (SEU), 357–358, 369

Sticking coefficients, 30, 42–43

Shockley–Read–Hall (SRH) recombination rate, 199, 248, 298, 353

Space-charge recombination, 97, 99, 101, 193, 195, 197, 201–202, 349, 366

Spreading resistance profiling (SRP), 33

Superlattice, 336, 388

Surface passivation, 336, 422

Surface recombination, 3, 40, 64, 97–99, 102, 198, 200, 349–350, 362, 422, 427

Surface recombination velocity, 98

Surface scattering, 4

Thermal instability, 304, 310–311, 313–314, 317, 321, 322

Thermal noise, 130

Thermal runaway, 307

Thermal stability, 319, 323

Thermal shunt, 318–319

Thermionic emission, 55–56, 65, 101, 186, 201, 204, 352

Thermionic-field-emission, 185, 189

Third-order intermodulation, 401

Time-to-failure (TFF), 334, 356

Total dose irradiation, 365

Total dose-rate radiation, 364

Transconductance clipping, 143, 155

Transient collector current recovery time, 369

Transient radiation effect, 369

Transmission electron microscope (TEM), 14, 341

Tunneling, 55, 65, 101, 187, 204, 354, 357

Tunneling current, 183

Two-port network method, 219

Valence-band discontinuity, 3, 6, 10–11, 55, 72, 184, 200, 297, 341, 345

Valence-band offset, 4, 73

Vapor phase epitaxy, 24–25, 27

Velocity overshoot, 3, 8–10, 113–115, 119, 241, 243, 252–253, 255, 388

Velocity saturation, 71

Volterra series expansion method, 401

X-ray diffraction, 14