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by Jiann S. Yuan
SiGe, GaAs, and InP Heterojunction Bipolar Transistors
Coverpage
Titlepage
Copyright
Dedication
Contents
Preface
About the Author
1 Introduction
References
2 Material Properties and Technologies
2.1 SiGe and Group III/V Compound Semiconductors
2.1.1 Bandgaps and Lattice Constants
2.1.2 Velocity Overshoot
2.1.3 Bandgap Discontinuity
2.1.4 Bandgap Narrowing
2.1.5 Strained Layer and Critical Thickness
2.1.6 Electron Mobility
2.1.7 Hole Drift Mobility
2.2 Heterojunction Technologies
2.2.1 Vapor-Phase Epitaxy
2.2.2 Molecular Beam Epitaxy
2.2.3 Gas-Source MBE and Metal-Organic MBE
2.3 Device Fabrication
2.3.1 SiGe HBTs
2.3.2 AlGaAs/GaAs HBTs
2.3.3 InP HBTs
References
Problems
3 DC Performance
3.1 General Structures and Steady-State Behavior
3.1.1 Electron and Hole Currents
3.1.2 Abrupt and Graded Heterojunctions
3.1.3 Undoped Setback Layer
3.1.4 Graded-Base HBTs
3.1.5 Double Heterojunctions
3.1.6 Electron Quasi-Fermi Level Splitting
3.1.7 Collector–Emitter Offset Voltage
3.1.8 Early Voltage
3.1.9 Bias-Dependent Base Resistance
3.1.10 High Injection Barrier Effect
3.2 SiGe Heterojunction Bipolar Transistors
3.2.1 Current Gain and Early Voltage Product
3.2.2 Temperature-Dependent Current Gain
3.2.3 Current Gain Roll-off in Graded SiGe Base
3.2.4 Early Voltage, Including Recombination in the SiGe Base
3.2.5 Inverse Base Width Modulation Effect
3.3 III/V Compound Heterojunction Bipolar Transistors
3.3.1 Self-Heating Effect
3.3.2 Recombination Currents
3.3.3 Temperature-Dependent Current Gain of AlGaAs/GaAs HBTs
3.3.4 Temperature-Dependent Current Gain of InP-Based HBTs
References
Problems
4 RF and Transient Performance
4.1 General Device Behavior
4.1.1 Output Conductance
4.1.2 Transconductance
4.1.3 Heterojunction Junction Capacitance
4.1.4 Base Transit Time
4.1.5 Collector-Base Space-Charge-Layer Delay
4.1.6 Cutoff Frequency
4.1.7 Maximum Frequency of Oscillation
4.1.8 NPN Versus PNP on RF Performance
4.1.9 Collector-Up Versus Collector-Down Influence on RF Performance
4.1.10 Noise
4.1.11 S-Parameters
4.1.12 Turn-off Transient
4.2 Silicon–Germanium Heterojunction Bipolar Transistors
4.2.1 Effect of Ge Profiles on go and τB
4.2.2 Effect of Ge Profiles on fT and fmax
4.2.3 Effect of Inverse Base Width Modulation on τB and τC
4.2.4 Transconductance Degradation at High Current Densities and Low Temperatures
4.2.5 Ge and Collector Doping Profile Design to Improve the Clipping Effect
4.3 III/V Compound Heterojunction Bipolar Transistors
4.3.1 Emitter Delay
4.3.2 AlGaAs and InGaAs Graded Bases
4.3.3 Heterojunction Capacitance, Including the Composition Grading and a Setback Layer
4.3.4 Thermal Effects on fT and fmax
References
Problems
5 HBT Modeling
5.1 Silicon–Germanium HBT Models
5.1.1 Analytical Collector Current Equation
5.1.2 Generalized Integral Charge-Control Relation for SiGe HBTs
5.1.3 Base Current of SiGe HBTs
5.1.4 High Current Operation
5.2 III/V Compound HBT Models
5.2.1 Thermionic-Field-Diffusion Model
5.2.2 Grinberg–Luryi Physics-Based Collector Current Model
5.2.3 New Charge-Control Model
5.2.4 Base Recombination Currents
5.2.4.1 Space-Charge-Region Recombination Currents
5.2.4.2 Surface Recombination Currents
5.2.4.3 Quasi-Neutral Recombination Currents
5.2.5 Analytical Collector Current Model, Including the Self-Heating Effect
5.2.6 Compact Gummel-Poon Model, Including the Self-Heating Effect
5.3 Large- and Small-Signal Models for RF Applications
5.4 Parameter Extraction
References
Problems
6 Heterojunction Device Simulation
6.1 Boltzmann Transport Equation
6.2 Monte Carlo Simulation
6.3 Drift and Diffusion Equations
6.4 Hydrodynamic Equations
6.5 Transistor Design Using Heterojunction Device Simulation
6.6 Multiemitter Simulation
References
Problems
7 Breakdown and Thermal Instability
7.1 Avalanche Breakdown
7.1.1 Reverse Base Current Phenomenon
7.1.2 Nonlocal Avalanche Effect
7.1.3 Influence of the Base Thickness on the Collector Breakdown
7.1.4 Avalanche Effect on the Collector-Base Junction Capacitance
7.1.5 Avalanche Effect on the Output Conductance
7.1.6 Breakdown and Speed Considerations in InGaAs HBTs
7.2 Thermal Instability
7.2.1 Emitter Collapse Phenomenon
7.2.2 Relation Between Emitter Collapse and Avalanche Breakdown
7.2.3 InP HBT Thermal Instability
7.2.4 Modeling the Emitter Collapse Loci
7.3 Design In Thermal Stability
7.3.1 Emitter Ballasting Resistors
7.3.2 Emitter Thermal Shunt
7.3.3 Base Ballasting Resistors
References
Problems
8 Reliability
8.1 Electrical and Thermal Overstress
8.1.1 Forward- and Reverse-Bias Stress Effects
8.1.2 Thermal Overstress
8.1.3 Burn-in
8.2 Process-Related Reliability Issues
8.2.1 Base Dopant Out-diffusion
8.2.2 Sensitivity of Emitter–Base Junction Design
8.2.3 Influence of Dislocations on the Transistor Current Gain
8.2.4 Effect of Passivation on InAlAs/InGaAs HBTs
8.2.5 Effect of Hydrogen Out-diffusion in InGaP/GaAs HBTs
8.3 Hot Carrier Behavior
8.4 Radiation Effects
8.4.1 Si-Based Bipolar Transistors
8.4.1.1 Oxide Trapped Charge and Excess Base Current
8.4.1.2 Low-Dose-Rate Radiation
8.4.1.3 Implications for Circuit Behavior
8.4.2 GaAs- and InP-Based Bipolar Transistors
8.4.2.1 Total Dose Effects
8.4.2.2 Transient Radiation Effects
References
Problems
9 RF and Digital Circuits for Low-Voltage Applications
9.1 Low-Voltage Applications
9.2 Wideband Amplifiers
9.3 RF Power Amplifiers
9.3.1 Power-Added Efficiency
9.3.2 Impact of Device Parameters on the HBT Large-Signal Gain
9.3.3 Heterojunction Bipolar Transistor Design for Power Applications
9.3.4 Class E Power Amplifiers
9.3.5 Third-Order Intermodulation
9.3.6 Self-Linearizing Technique for the L-Band HBT Power Amplifier
9.4 Low-Noise Amplifiers
9.5 HBT Oscillators
9.5.1 Modeling the Bipolar Phase Noise
9.6 Analog Multipliers
9.7 A/D Converters
9.8 Diode-HBT Logic with ECL/CML Circuits
9.8.1 Gate Delay Versus Power
9.8.2 Figure of Merit for CML
9.8.3 Figure of Merit for ECL
9.8.4 SiGe Digital Circuit Performance
9.9 Phototransistors
9.10 Photoreceivers
References
Index
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