Contributor contact details

(* = main contact)

Editor

Y. Nishi

Stanford University, USA

[email protected]

Chapter 1

R. Bez* and A. Pirovano

Micron, Process R&D, Via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy

[email protected]

Chapter 2

R. Shirota

National Chiao Tung University, Department of Electrical and Computer Engineering, Microelectronics and Information Systems Research Building, 1001 Ta-Hsueh Road, Hsinchu-city, 30010 Taiwan

[email protected]

Chapter 3

R. Micheloni* and L. Crippa

PMC-Sierra, Vimercate, Italy

[email protected]; [email protected]

Chapter 4

G. Molas*, L. Masoero, V. Della Marca, G. Gay and B. de Salvo

CEA-LETI Minatec Campus, 17 rue des Martyrs, Grenoble, 38054, France

[email protected]

Chapter 5

S. Raoux

Institute Nanospectroscopy for Energy Material Design & Optimization, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Kekuléstr, 7 | 12489 Berlin Germany

[email protected]

Chapters 6 and 7

M. Longo

National Research Council, Institute for Microelectronics and Microsystems (CNR-IMM), Via C. Olivetti, 2, 20864 Agrate Brianza (MB), Italy

[email protected]

Chapter 8

K. Kamiya*

Center for Basic Education and Integrated Learning, Kanagawa Institute of Technology, 1030 Shimo-Ogino, Atsugi-shi, Kanagawa, 243-0292, Japan

[email protected]

M.Y. Yang,     University of Tsukuba, Japan

K. Shiraishi

Nagoya University, Japan

[email protected]

B. Magyari-Köpe and Y. Nishi,     Stanford University, USA

Chapter 9

G. Bersuker* and D.C. Gilmer

SEMATECH, USA

[email protected]

Chapter 10

J.R. Jameson* and M. Van Buskirk

Adesto Technologies Corporation, 1250 Borregas Avenue, Sunnyvale, CA 94089, USA

[email protected]; [email protected]

Chapter 11

G.M. Huang and Y. Ho*

Department of Electrical and Computer Engineering, Texas A&M University, Wisenbaker Engineering Building (WEB), 188 Bizzell Street WEB#320E College Station, Texas 77843, USA

[email protected]; [email protected]

Chapter 12

A. Kiazadeh* and H.L. Gomes

Institute of Technology, University of the Algarve, Portugal

[email protected]

Chapter 13

W. Kwon

EECS Department, University of California Berkeley, CA 94720-1770, USA

[email protected]

Chapter 14

T. Eshita*

Fujitsu Semiconductor Ltd, Process Development Division, 1500 Mizono, Tado-cho, Kuwana, 511-0192, Japan

[email protected]

T. Tamura,     Fujitsu Semiconductor Ltd, High Performance SoC Solutions Division, 2-10-23 Shin-Yokohama, Kohoku-Ku Yokohama, Kanagawa, 222-0033, Japan

Y. Arimoto,     Fujitsu Laboratories Ltd, 4-1-1 Kamikodanaka, Nakahara-ku, Kawasaki, Kanagawa, 211-8588, Japan

Chapter 15

H. Ohno*, T. Endoh, T. Hanyu, Y. Ando and S. Ikeda

Center for Spintronics Integrated Systems, Tohoku University, 2-1-1 Katahira, Aoba-Ku, Sendai, Miyagi, 980-8577, Japan

[email protected]