APPENDIX E
Termination of a Transistor Port with a Load

In the three-port circuit in Fig. E.1 one of the three ports is terminated with an impedance that has a reflection coefficient relative to the reference impedance Zref:

(E.1) bapp05e001

FIGURE E.1 Three-port with source terminated with rs.

bapp05f001

In this expression the subscript i represents s, g, or d, depending on whether the device connection is common source, gate, or drain terminated with Zs, Zg, or Zd . For example, rs = a2/b2 in Fig. E.1 or b2 = a2/rs . This is substituted in the appropriate place in the following equations. The incident and scattered waves from the three-port circuit are

(E.2) bapp05e002

(E.3) bapp05e003

(E.4) bapp05e004

When one of the ports is terminated with ri, then the circuit really is a two port. The scattering parameters for the common source, gate, and drain connection follow:

Common Source

(E.5) bapp05e005

(E.6) bapp05e006

(E.7) bapp05e007

(E.8) bapp05e008

Common Gate

(E.9) bapp05e009

(E.10) bapp05e010

(E.11) bapp05e011

(E.12) bapp05e012

Common Drain

(E.13) bapp05e013

(E.14) bapp05e014

(E.15) bapp05e015

(E.16) bapp05e016

A numerical example illustrates the process. A transistor with a set of common source S parameters at 2 GHz is given below:

bapp05ue001

bapp05ue002

bapp05ue003

bapp05ue004

These are then converted to two-port y parameters. These will be called y11, y31, y13, and y33. The indefinite admittance matrix is formed by adding a third row and column such that the sum of each row and the sum of each column is zero. The resulting 3 × 3 set of y parameters are obtained:

bapp05ue005

bapp05ue006

bapp05ue007

bapp05ue008

bapp05ue009

bapp05ue010

bapp05ue011

bapp05ue012

bapp05ue013

These are then converted to three-port S parameters using Eq. (10.32) as originally given in [1]:

bapp05ue014

bapp05ue015

bapp05ue016

bapp05ue017

bapp05ue018

bapp05ue019

bapp05ue020

bapp05ue021

bapp05ue022

At this point it is desired to transform these parameters to common gate parameters in which the gate is connected to ground through a short circuit. The resulting common gate two-port S parameters are found from Eqs. (E.9) through (E.12):

bapp05ue023

bapp05ue024

bapp05ue025

bapp05ue026

With the transistor now characterized in the orientation that it is to be used in the oscillator, a choice is made for the impedance at the generator side. If this impedance is chosen to be a 5-nH inductor at 2 GHz, the output reflection coefficient is

bapp05ue027

This shows that oscillation is possible under these loading conditions. The above expressions for the revised S parameters can be found in [2] using slightly different notation.

REFERENCES

1. K. Kurokawa, “Power Waves and the Scattering Matrix,” IEEE Trans. Microwave Theory Tech., 13, pp. 194–202, March 1965.

2. R. M. Dougherty, “Feedback Analysis and Design Techniques,” Microwave J., pp. 133–150, April 1985.

..................Content has been hidden....................

You can't read the all page of ebook, please click here login for view all page.
Reset
18.189.195.91