Table 2.1 Comparison of the features of experimental methods used for the study of defect structure in nanomaterials 28

Table 2.2 The values of C¯h00 and q for edge and screw dislocations in Al, Cu, and Fe 35

Table 2.3 The notations, the Burgers vectors, and the slip planes of the 11 hexagonal slip systems [16] 40

Table 2.4 Specific electrical resistivity for vacancies, dislocations, and stacking faults in some pure fcc metals 50

Table 2.5 Positron lifetimes for defect-free lattice and different lattice defects in Al [57] 53

Table 3.1 The maximum dislocation density and the minimum crystallite size determined by X-ray line profile analysis, and the minimum grain size obtained by transmission electron microscopy for metallic materials processed by severe plastic deformation 71

Table 3.2 The concentration and the cluster size of vacancies obtained for metals processed by severe plastic deformation 80

Table 4.1 The equilibrium splitting distance (d_p) for screw and edge dislocations, the constriction energy (W₀), and the waiting time for cross-slip of screw dislocations (t_cs) in various pure face-centered cubic metals 96

Table 4.2 The maximum values of the twin boundary frequency achieved by severe plastic deformation for some nanostructured low SFE metals and alloys 114

Table 5.1 The maximum dislocation density and the minimum crystallite size determined by X-ray line profile analysis, and the minimum grain obtained by TEM for powder materials processed by long time milling 129

Table 5.2 The grain size, the dislocation density, and the twin fault probability determined by X-ray line profile analysis for powder particles processed by bottom-up processing methods 133

Table 5.3 The intensity ratio (I_NiO/I_Ni) of the X-ray peaks for NiO and Ni at 2Θ = 37.4 degrees and 44.6 degrees, respectively, the mean grain size obtained from TEM images, the mean crystallite size, the dislocation density, and the twin fault probability for the samples processed by hot-isostatic pressing and spark-plasma sintering [47] 140

Table 5.4 The parameters of the microstructure for nanocrystalline SiC specimens sintered at different pressures and temperatures 147

Table 6.1 Parameters of the microstructure for electrodeposited nanocrystalline Ni films prepared with different additives 156

Table 6.2 Parameters of the microstructure for textured Ni films prepared under different conditions (concentration of organic additive 2-butyne-1,4-diol and current density). The crystallite size is the arithmetically averaged size of crystallites obtained by XLPA (see Chapter 2). The twin fault spacing obtained by XLPA method was calculated from the measured twin fault probability using Eq. (4.15) in Chapter 4 159

Table 6.3 The area-weighted mean crystallite size and the dislocation density for Cu-Nb multilayers with different layer and film thicknesses [16,17] 170

Table 7.1 The dislocation density (ρ) determined by X-ray line profile analysis and the yield strength (σ_Y) at room temperature (RT) for face-centered cubic (fcc) metals and alloys processed by severe plastic deformation 188

Table 7.2 The average grain size (d), the mean twin spacing (t), the activation volume (V∗), the strain rate sensitivity (m), the yield strength (σ_Y), the uniform and total elongations for various Cu samples at room temperature 201

Table 7.3 The relative density, the intensity ratio (I_NiO/I_Ni) of the X-ray peaks for NiO and Ni at 2Θ = 37.4 and 44.6 degrees, respectively, the mean grain size (d) obtained from transmission electron microscopy images, the yield strength, maximum strength, and the strain to failure determined by compression for Ni samples processed from nanopowders by hot isostatic pressing (HIP) or spark plasma sintering (SPS) 203

Table 8.1 The features of the matrix and CNTs, the processing method, the Young' modulus, the yield and tensile strengths, and the elongation to failure for different metal matrix–CNT composites 236

Table 8.2 Resistivity, conductivity, and strength-to-resistivity ratio measured at RT for different values of CNT volume fraction in laminar Cu-CNT composite films processed by electroplating [24] 244

Table 9.1 Specific electrical resistivities for vacancies, dislocations, stacking faults, twin faults, and general high-angle grain boundaries (HAGBs) in Cu 248

Table 9.2 Grain size, mechanical strength, conductivity in IACS, resistivity, and strength-to-resistivity ratio measured at RT for different UFG and nanocrystalline materials 253

Table 9.3 Grain size, mechanical strength, conductivity in International Annealed Copper Standard (IACS), resistivity, and strength-to-resistivity ratio measured at room temperature (RT) for Cu/Cr multilayers with different layer thicknesses. The strength is calculated as one-third of the hardness [41,43] 266

Table 10.1 The grain boundary diffusion kinetics types, the related experimental conditions, and the evaluated function of concentration (c¯) versus penetration depth (x) 276

Table 10.2 The frequency factor (D₀), the activation energy (Q) of diffusion for different UFG and nanocrystalline materials 284

Table 12.1 The average grain size determined by transmission electron microscopy, the mean crystallite size, the dislocation density, and the twin boundary frequency obtained from X-ray line profile analysis and the onset temperature of recovery/recrystallization (T_onset) measured by differential scanning calorimetry at a heating rate of 40 K/min for Cu processed by different severe plastic deformation methods 319

Table 12.2 The average grain size determined by transmission electron microscopy, the mean crystallite size, and the dislocation density obtained from X-ray line profile analysis and the peak temperature of recovery/recrystallization (T_peak) measured by differential scanning calorimetry at a heating rate of 40 K/min for Ni processed by different severe plastic deformation methods and electrodeposition 320

Table 12.3 The processing method, the grain size, the heat released in the exothermic peak, and the activation energy of recrystallization determined for various ultrafine-grained and nanomaterials 323

Table 12.4 The balance table for stored energies calculated for the different lattice defects (dislocations, high-angle grain boundaries, twin faults, small dislocation loops, and vacancies) in equal-channel angular pressing–processed 4N5 purity Ag before and after the differential scanning calorimetry (DSC) peak 330

Table 12.5 The crystallite size, the dislocation density (ρ), and the parameter q describing the edge/screw character of dislocations obtained by X-ray line profile analysis 349