Index
schematic illustration, 11
Ag film, 26–7
all-order re-emission, 391
AlN, 297–300
angle-resolved photoemission spectroscopy, 25–8
Ag on Fe(100) normal emission photoemission spectra, 27
silver energy band structure, 26
anisotropic diffusion, 64
anisotropy, 55
anti-Bragg oscillations, 102–6
antiferroelectric thin films, 370–1
Apollonius packing, 156
atomic force microscope, 212
atomic layer deposition, 70
morphological instability, 15–16
evolution of atomic step instability, 16
motion on growing and evaporating Si (111) surface, 11–15
adatoms schematic illustration, 11
atomic steps temperature dependence, 13
circular terraces radii, 15
SEM images circular atomic steps, 13
step-flow evaporation, 12
step-flow growth and evaporation illustration, 14
observation method, 6–8
SEM image in quenching method, 8
SEM image on phase transition temperature, 7
atomically uniform films, 28–9
principles and nanostructure development, 35–46
normal emission photoemision intensity, 36
relative surface energy, 43
schematic growth of Pb on Si (111), 42
stability temperature and density-functional calculation, 38
temperature stability, 45
thickness of Pb on Si (111), 44
quantum electronic stability, 22–48
angle-resolved photoemission spectroscopy, 25–8
electronic growth, 23–5
future trends, 47–8
particle-in-a-box, 46–7
thermal stability, 29–35
auger electron spectroscopy (AES), 101
BCF model, 53
Bohr-Sommerfeld, 27–8
Boltzmann distribution, 275
Brownian forces, 157
buckling, 317–37
diamond-like thin carbon film deposited on a glass substrate, 318
buckling induced by substrate plasticity, 321–2
buckling structures, 320–1
nickel thin film 150 nm thick deposited on LiF single crystal, 323
nickel thin films deposited on LiF single crystals, 322
primary slip systems orientation, 321
localisation of buckling structures, 329–30
above the steps formed during dislocations in the substrate, 329
effects of uniaxial strain on a thin film, 330
mechanical properties measurement, 333–6
effect of adhesion on evolution of buckle height vs applied stress on its edges, 335
modelling, 322–9
buckling on crystalline substrates, 325–9
comparison between two benchmarks, 328
evolution of delaminated strip of the film, 326
Föppl-von Kármán theory of buckling, 322–5
theoretical profile associated with fundamental solution of a film undergoing displacements, 327
slip systems, 330–1
straight-sided buckle formed during the activation of two symmetric slip systems, 331
straight-sided buckles on 100 nm thick film, 319
telephone cord buckling patterns on a Y2O3 thin film, 319
evolution of thin film deposited on crystalline substrate, 332
thin film strain in tension on step formed during emergence of dislocations, 334
unstressed thin film on a step formed during emergence of dislocations, 332
vertical displacement of thin film in equilibrium state on crystalline substrate, 337
buckling profile, 355
buckling wavelength, 345
buffered oxide etchant (BOE), 212
carbon-nanotube films, 225
carbon supersaturation, 245
catalyst-enhanced chemical vapour deposition, 75
CBED See convergent beam electron diffraction
chemical etching, 289–90
circular photogalvanic effect (CPGE), 291–2
coaxial impact collision in ion scattering spectroscopy, 291
coincidence site lattice See moiré lattice
collimator, 124
filling fraction calculus vs normalised thickness, 163
hard disk orderings 2D confinement and transitions, 160
experimental tools, 157–60
face centred cubic and hexagonal closed packed models, 160
triangular and square facet reflectance spectra, 159
future trends, 181
hexagonal closed packed-like and pre-h phases, 173–8
different particle arrangements images, 174
filling fraction, 175
microcrystallite rotations, 177
pre-3h, pre-4h and pre-5h images, 178
reflectance optical spectra for transition, 175
transition model, 176
historical survey, 160–78
macled vicinal and hexagonal closed packed phases, 166–73
4 hexagonal closed packed (100) SEM image, 170
face centred cubic (100) orderings, 168
FCC (100), (111) and HCP (011) transition models, 172
9HCP(100) experimental spectrum and theoretical calculation, 171
hexagonal closed packed SEM images, 173
vicinal arrangements construction models, 167
phase transitions, 155–81
prismatic phases, 162–6
charged confined system, 166
cleft edges and 7P images, 164
continuous increasing distance value, 165
facet models, 163
sequence, 178–81
beyond eight monolayers, 181
filling fraction calculation, 180
from one to four monolayers, 179
3D models, 162
optical spectra, 171
SEM images, 169
transition, 170
wedge cell, 158
composition, 75–6
computational fluid dynamics, 74
concentration gradient, 72–3
convergent beam electron diffraction, 290
cubic unit cell, 187
temperature dependence of electrical resistivity, 206–8
X-ray diffraction patterns, 204
doping by co-sputtering, 203–8
TEM of Cu3NPd0.175, 205
electrical resistivity at room temperature, 192
nitrogen re-emission, 198–203
fivefoldness microstructure, 202
rosette magnification micrographs, 201
SEM image, 199
reactive magnetron sputtering, 185–7
stoichometric deposition, 190–8
Cu content with nitrogen proportion in working gas, 190
electrical resistivity temperature dependence, 195
surface morphology, 197
TEM image, 196
thin film growth for thermally unstable noble metal nitrides, 185–209
thin films X-ray diffraction patterns, 191
XRD patterns after annealing, 198
XRD patterns at different RF powers, 193
and nucleation measurement of thin films, 3–17
atomic steps morphological instability, 15–16
atomic steps motion on growing and evaporating Si (111) surface, 11–15
atomic steps observation method, 6–8
epitaxial growth theory, 4–6
future trends, 17
two-dimensional-island nucleation and flow growth modes, 9–11
crystal momentum, 25
crystalline substrate plasticity, 317–37
crystallography, 74–5
Cu3N See copper nitride
CVD See chemical vapour deposition
2D Brownian diffusion, 64
defects, 68–9
deposition-diffusion-aggregation (DDA) model, 63–4
deposition time, 391
diffusion equation, 4
diffusion-limited-aggregation (DLA), 64
diffusive growth model, 104
diindenoperylene, 109–10
direct impingement, 65–6
DLVO theory, 155
droplet growth model, 68
dynamic coalescence, 67–8
dynamic scaling analysis, 385
e-beam lithography See electron beam direct writing
edge diffusion/deformation, 65
edge-type threading dislocations (ETD), 303–4
EELS See electron energy loss spectroscopy
effective barrier height, 268
Einstein’s formula, 13
ferroelectric polymer films, 364–81
future trends, 379–80
large ECE in ferroelectric polymer films, 371–9
adiabatic temperature changes as a function of ambient temperature, 375
direct measurements, 376–9
ECE temperature changes vs temperature for 55/45 copolymer, 377
electric displacement as a function of temperature, 374
electric displacement–electric field hysteresis loops, 373
entropy change as a function of temperature, 379
entropy changes vs temperature, 378
isothermal entropy changes as a function of ambient temperature, 374
Maxwell relations, 371–5
phenomenological calculations, 375–6
polarisation vs temperature relationships, 377
remanent polarisation as a function of temperature, 373
temperature change as a function of temperature, 379
DC bias fields for 55/45 copolymer, 376
P(VDf-TrFE) 55/45 mol% copolymers, 372
polar materials, 369–71
ferroelectric and antiferroelectric thin films, 370–1
ferroelectric ceramics and single crystals, 369–70
thermodynamic considerations, 365–8
ferroelectric materials, 368
Maxwell relations, 365–7
phenomenological theory, 367
electrolyte-based capacitance voltage, 307
electron beam direct writing, 126–7
electron energy loss spectroscopy, 101
electron microscopy, 91
electron scattering, 99–101
electronic growth, 23–5
electrostatic energy, 257–8
ellipsometry measurements, 88
emission photoemission intensity, 36
empirical model, 76
energy distribution curve, 26–7
epitaxial growth, 4–6
crystal surfaces models, 4
graphene thin films on single crystal metal surfaces, 228–50
evaporation, 64–5
experimental case studies, 101–13
growth mode determination, 102–6
X-ray anti-Bragg oscillations, 102–6
optical real-time studies, 109–113
diindenoperylene film on glass, 111
experimental setup and real-time GIXD data, 112
optical reflectance during thin film growth, 109–10
real-time DRS spectra and molecular arrangement, 113
simultaneous optical reflectance and GIXD during thin film growth, 111–13
post-deposition changes, 108–9
molecular monolayer dewetting, 108–9
X-ray reflectivity during growth and dewetting, 110
scaling laws, 106–8
real-time reflectivity data, 107
reflectivity and full q-range oscillations, 106–8
surface roughness scaling, 108
transient strain during thin film growth, 102
GIXD pattern evolution, 103
real-time and in situ observation, 87–101
microscopy, 90–1
optical spectroscopy techniques, 88–90
overview for real-time growth observation, 87
scattering methods, 91–101
set-up for in-situ DRS, 89
specular and diffuse scattering, 93
specular reflectivity measurement and grazing incidence diffraction (GIXD), 92
X-ray, He and electron scattering, 94
X-ray reflectivity curves and growth oscillations, 97
Fabry–Pérot interferometer, 33
Fabry–Perot oscillation, 158–9
face centered cubic, 156
FCC See face centered cubic
Fermi–Dirac statistics, 208
ferroelectric ceramics, 369–70
electrocaloric effect, 364–81
future trends, 379–80
large ECE, 371–9
previous investigations in polar materials, 369–71
thermodynamic considerations, 365–8
field emission resonances (FER), 266
final simulation time, 391
fluorinated copper phthalocyanine, 111–13
Föppl-von Kármán theory of buckling, 322–5
Föppl-von Kármán theory of thin plates, 318
Fourier series, 356
Fourier transform infrared IFS-66 Bruker Spectrometer, 158
Frank–van-der-Merve mode, 69–70
GaAs(111), 9–11
GaN, 297–300
Gibbs-Thomson relation, 54
GIXD See grazing incidence X-ray diffraction
GLAD See glancing angle deposition
glancing angle deposition, 123
global shadowing effect, 124
graphene, 228
honeycomb structure, 229
30-inch roll-to-roll production for transparent electrodes, 218–25
electrical characterisation of HNO3-doped films, 223–4
optical and electrical properties, 222–5
roll-base production photographs, 219
synthesis, 211–22
epitaxial growth on single crystal metal surfaces, 228–50
future trends, 249–50
graphene’s honeycomb structure, 229
growth, 211–25
growth on metal, 237–49
calculated structural models for graphene nanoislands on Ir(111), 240
carbon nanotube growth at surface of catalytic particle, 245
different elementary processed during CVD growth, 238
differentiated STM topograph and contours of growing graphene islands, 243
graphene coverage as function of ethene dose, 246
graphene multilayers on metals, 247–9
graphene nanoflakes, 239–42
interaction metal step edges upon graphene growth on Ir(111) and on Pd(111), 244
plain graphene sheets, 242–7
repeated sequences of graphene CVD growth on Ir(111), 248
STM topographs of carbidic and graphene islands on Ir(111), 241
large-scale pattern for stretchable transparent electrodes, 211–17
spectroscopic analyses, 213
illustration, 216–17
optical characterisation, 221–2
structure on metals, 229–37
commensurate or not, 230–3
height of graphene sheet, 233–4
intrinsic and extrinsic defects of graphene, 236
LEED pattern, STM topographs and RHEED pattern for graphene on Ir(111), 232
micro-LEED pattern, angle distribution, STM topograph of graphene on Ir(111), 235
orientation variants, small-angle twins and dislocations, 234–6
other defects, 236–7
structural model for graphene on Ni and ball model for a moiré between graphene and a Ir plane, 231
graphene nanoflakes, 239–42
growth rate, 86
hard sphere systems, 160
helium atom scattering (HAS), 97–9
hetero/non epitaxial growth, 69–76
growth stage, 70–1
film growth with and without positive feedback, 71
initial deposition processes, 69–70
non-positive feedback, 74–6
composition, 75–6
crystallographic orientation, 74–5
positive feedback, 71–4
concentration gradient, 72–3
shadowing, 71–2
thermophoresis, 74
hexagonal closed packed models, 156
high resolution electron energy loss spectroscopy, 272
kinetics, 61–9
aggregation, aggregation/dissociation, breakup, 66
coalescence, 67–8
defects, 68–9
deposition-diffusion-aggregation (DDA) model, 63–4
direct impingement, 65–6
edge diffusion/deformation, 65
evaporation, 64–5
illustration of processes, 62
migration, 66–7
thermodynamics, 61
Hooke’s equation, 323
hydrogen fluoride solution, 212
polarity controlled epitaxy by molecular beam epitaxy, 288–314
indium tin oxide (ITO), 225
InN, 300–9
interfacial X-ray microscopy, 114
irreversible aggregation, 66
island growth (Volmer-Weber), 84
lattice polarity, 289–92
LEED See low energy electron diffraction
LEEM See low energy electron microscopy
Lennard-Jones (L-J) potential, 134
local surface potential, 268
long-range diffusion, 64
low energy electron microscopy, 17
magnetocaloric effect (MCE), 365
Maxtek TM-350/400, 130
Maxwell–Boltzmann formula, 208
MBE See molecular beam epitaxy
mechanistic model, 76
medium-energy ion scattering spectroscopy, 14
metal-insulater-semiconductor (MIS) structure, 307
metal–organic vapour phase epitaxy (MOVPE/MOCVD), 297
migration, 66–7
molecular beam epitaxy, 3–4
polarity controlled epitaxy of III-nitrides and ZnO, 288–314
molecular exciton theory, 111–12
ballistic fans, 132–7
ballistic sticking model, 134
chemical vapour deposition, 389
particles deposited on small and big seeds, 137
templated surface containing seeds, 136
Mott–Schottky plot, 308
Mullins-Sekerka instability, 73
Mylar film, 157
growth dynamics and network behaviour in thin films, 384–400
Monte Carlo simulations, 390–2
origins of network behavior, 390
simulation results, 392–9
simulation results, 392–400
degree distributions, average distance vs degree and distance distributions for network models, 397
height matrix and corresponding surface-degree values, 394
thin film surfaces for chemical vapour deposition growth, 395
thin film surfaces grown under shadowing, re-emission, and noise effects, 393
weighted average distance vs degree for network models, 400
thin films and nanostructure growth dynamics, 384–400
growth exponent values vs predictions of thin film growth models, 386
Monte Carlo simulated chemical vapour deposition, 389
Monte Carlo simulations, 390–2
origins during thin film growth, 390
simulation results, 392–9
sticking coefficient values, 388
thin film growth under shadowing and re-emission effects, 386
Nichols-Mullins equation, 68
nitrogen, 186
re-emission, 198–203
Au or SiO2, 352
silicon, 352
one-dimensional, 343–7
buckled GaAs thin films on patterned PDMS substrate, 346
processing steps for precisely controlled thin film buckling, 344
two-dimensional, 347–61
bending and membrane strain vs applied strain, 358
CMOS inverters, 360
encapsulated system subject to stretching, 355
encapsulated system vs non-dimensional parameter, 359
fabricating electronics, 348
maximum metal strain interconnect bridge and Si strain vs prestrain, 354–61
mechanics model prior to encapsulation, 349
post-encapsulation analysis, 354–61
pre-encapsulation analysis, 348–54
strain in islands when interconnect bridge relaxes, 353
and growth processes of thin films, 3–17
atomic steps morphological instability, 15–16
atomic steps motion on growing and evaporating Si (111) surface, 11–15
atomic steps observation method, 6–8
Burton, Cabrera & Frank model for evaporating surface, 18–19
epitaxial growth theory, 4–6
future trends, 17
macro-vacancy formation, 20–1
two-dimensional-island nucleation and flow growth modes, 9–11
nucleation theory, 63
fan-out growth control with substrate rotations, 144–8
Monte Carlo simulation, 148
PhiSweep technique, 145–6
swing substrate rotation, 147
fan-out growth with oblique angle incident flux, 140–4
experimental demonstration, 140–2
MC simulations, 142–4
fan-out with normal incident flux, 130–40
ballistic fans growth, big and small seeds, 139
ballistic sticking model, 138
experimental observation, 130–2
growth exponent, 137–40
Monte Carlo simulation, 132–7
SEM image of ballistic fan with film thickness of 700nm, 131
SEM image of ballistic fan with film thickness of 800nm, 132
preparation of templated surface, 126–30
seed geometry, 129
SEM images, 128
silicon nanostructured films growth, 123–151
applications and future trends, 148–51
oblique angle incident flux, 140–4
experimental demonstration fan-out growth, 140–2
flux alignment, 140
fan-out growth of S on small- and large-sized W pillars, 142
fan-out growth of Si on W pillars, 141
Monte Carlo simulations, 142–4
ballistic fans linear growth, 144
fan structures with ballistic sticking model, 143
optical reflectance, 158
film growth, 109–10
GIXD during thin film growth, 111–13
optical spectroscopy, 88–90
orogenic movement model, 201
oxide polarity, 256–61
ionic system classification according to Tasker scheme, 257
polarity-healing mechanisms in ionic systems, 259
vertical cut through a polar system and electrostatic energy dependence on polar slab thickness, 258
Zn-terminated ZnO and triangular islands structure models, 260
oxygen, 186
Pauli repulsion, 279
Pb films, 35–46
PDMS See polydimethylsiloxane
PET See polyethylene terephthalate
phase-field formula, 54
anomalous spiral growth spiral growth images, 58
numerical results, 54–7
anomalous spiral growth, 56–7
thin film growth, 52–8
modeling, 53–4
numerical results, 54–7
trench formation, 55–6
simulated trench morphology, 55
colloidal crystal thin films, 155–81
experimental tools, 157–9
future trends, 181
historical survey, 160–78
transition sequence, 178–81
phenomenological model, 76
phenomenological theory, 367
PhiSweep technique, 145–6
SEM images, 146
photoelectron emission microscopy (PEEM), 91
photolithography, 126–7
plain graphene sheets, 242–7
elementary processes during the growth, 245–6
formation and stability of rotational variants, 246–7
graphene interaction with substrate step edges, 243–5
from graphene islands to plain sheets, 242–3
plasma sputtering processes, 188
plate capacitor model, 258
PMMA See poly-(methylmethacrylate)
polar oxide films, 261–4
oxide layers sequence, 262
STM topographic images of films prepared on metal supports, 263
adsorption properties, 272–82
Au and Pd atoms on FeO/Pt(111), 279
Au atoms on FeO/Pt(111), 275
binding configuration of Au on FeO/Pt(111), 277
conductance spectra and calculated state-density of Au and AuCO species, 278
metal atoms adsorption on polar FeO films, 274–80
MgPc molecules on FeO/Pt(111), 281
molecules adsorption on polar FeO films, 280–2
planar Pd island grown on FeO/Pt(111) film, 273
two-dimensional pair-distribution function of Au atoms on FeO film, 276
electronic properties and adsorption behaviour, 256–83
future trends, 282–3
oxide polarity, 256–61
ionic system classification according to Tasker scheme, 257
three main polarity-healing mechanisms in ionic systems, 259
vertical cut through a polar system an electrostatic energy dependence on polar slab thickness, 258
Zn-terminated ZnO and structure models of triangular islands, 260
polar oxide films, 261–4
oxide layers sequence, 262
STM topographic images of films prepared on metal supports, 263
thin oxide films polarity measurement, 264–72
bilayer MgO(111) island grown on Au(111) and effective barrier height, 271
conductance spectra with closed feedback loop and potential diagram visualising FER formation, 167
FeO/Pt(111) conductance and topographic images taken as a function of bias voltage, 166
model structure for FeO/Pt(111) system, 270
structure model of coincidence cell formed between FeO and Pt(111), 265
tunnel current vs tip-sample distance for top and hcp domain of FeO coincidence cell, 269
GaN and AlN, 297–300
effect of surface stoichiometry on polarity control processes, 300
N-polar AlN epilayer grown in N-rich conditions, 299
III-nitrides and ZnO by molecular beam epitaxy, 288–314
InN, 300–9
conduction regions and calibrated net acceptor/donor concentrations of InN:Mg layers, 309
electron concentrations and Hall mobilities of many InN films, 304
energy band diagram for ECV characterisation, 307
excitation power dependent photoluminescence study of sample, 306
growth regime diagram, 301
InN films growth rate, 301
MBE grown In-polarity vs N-polarity InN epilayers, 303
photoluminescence intensity and spectra, 305
surface morphology of InN with In- and N-polarities, 302
lattice polarity and detection methods, 289–92
as-grown and 13 h-etched InN layers with different polarities, 290
simulated CAICISS spectra of InN, 291
wurtzite GaN in different polarities, 289
polarity issues at heteroepitaxy and homoepitaxy, 292–7
multiple-layer-structure InN film, 297
photocurrents in four kinds of InN layers with different polarities, 293
pre-treatment methods of sapphire substrate before ZnO buffer layer growth, 294
sapphire atomic structure, 296
ZnO epilayers grown with different sapphire surface treatments, 295
ZnO, 309–13
growth conditions and polarities of single-domain ZnO epilayers, 310
RHEED patterns along Al2O3 e-beam azimuth, 312
surface image of ZnO epilayer, 313
polydimethylsiloxane, 212
polyethylene terephthalate, 220
prestrain, 341
QHAS See quasi-elastic helium-atom scattering
atomically uniform films, 22–48
angle-resolved photoemission spectroscopy, 25–8
bifurcation temperatures, 33
electronic growth, 23–5
future trends, 47–8
particle-in-a-box, 46–7
principles and nanostructure development, 35–46
quantum thermal stability, 29–35
spectral evolution, 31
uniform films breakdown, 32
quantum Hall effect (QHE), 225
quantum-mechanical effects, 24
quasi-elastic helium-atom scattering, 98–9
quenching method, 7
raman spectroscopy, 88
rate equation (RE), 64
application, 186
copper nitride, 188–9
thin film growth for thermally unstable noble metal nitrides, 185–209
experimental techniques, 87–101
microscopy, 90–1
optical spectroscopy techniques, 88–90
scattering methods, 91–101
modelling thin film deposition process, 83–114
experimental case studies, 101–13
future trends, 113–14
growth and timescales for in situ observation, 84–7
information sources and advice, 114
time resolved surface science, 83–4
timescales scheme, 86
real-time reflectance, 88
reflection anisotropy spectroscopy (RAS), 89
reflection high-energy electron diffraction with spot profile analysis, 24
restricted solid-on-solid growth, 138
root-mean-square roughness (RMS), 385
roughening temperature, 61
roughening transition, 61
sapphire, 292
scanning electron microscope, 212
scanning probe microscopy, 90–1
self-assembly phenomena, 280
SEM See scanning electron microscope
shadowing, 71–2
oblique angle deposition, 123–151
applications and future trends, 148–51
fan-out growth with normal incident flux, 130–40
fan-out growth with oblique angle incident flux, 140–4
seeds geometry, 129
SEM images, 128
setup, 124
square spirals, swing rotation, 150
substrate rotations for fan-out growth control, 144–8
templated surface preparation, 126–30
epitaxial growth of graphene thin films, 228–50
Smoluchowski ripening, 242
snapshot state, 391
spectroscopic ellipsometry, 89
static coalescence, 67
step-flow growth mode, 9–11
SEM image of GaAs (001), 9
SEM image sequences, 10
sticking coefficient, 387
STM See scanning tunneling microscopy
Stranski-Krastanov mode, 70
stretchable electronics, 340
controlled buckling of thin films on compliant substrates, 340–61
nanoribbons/nanomembranes and non-coplanar mesh designs, 342
Au or SiO2, 352
silicon, 352
one-dimensional non-coplanar mesh design, 343–7
buckled GaAs thin films on patterned PDMS substrate, 346
processing steps for precisely controlled thin film buckling, 344
two-dimensional non-coplanar mesh design, 347–61
bending and membrane strain vs applied strain, 358
CMOS inverters, 360
encapsulated system subject to stretching, 355
encapsulated system vs non-dimensional parameter, 359
fabricating electronics, 348
maximum metal strain interconnect bridge and Si strain vs prestrain, 354–61
mechanics model prior to encapsulation, 349
post-encapsulation analysis, 354–61
pre-encapsulation analysis, 348–54
strain in islands when interconnect bridge relaxes, 353
substrate plasticity See crystalline substrate plasticity
analysis in thin films, 60–76
future trends, 76
hetero- or non-epitaxial growth, 69–76
homo-epitaxial growth, 61–9
surface X-ray diffraction (SXRD), 232
swing rotation, 145–6
logarithmic plot, 149
Monte Carlo simulation, 148
SXRD See surface X-ray diffraction
synchrotron radiation, 25
Tasker, P.W., 256
temperature coefficient of resistivity, 203
thermal power, 307
thermodynamics, 61
thermophoresis, 74
thin film coatings, 384
controlled buckling on compliant substrates for stretchable electronics, 340–61
nanoribbons/nanomembranes and non-coplanar mesh designs, 342
one-dimensional non-coplanar mesh design, 343–7
two-dimensional non-coplanar mesh design, 347–61
deposition techniques, 384–5
graphene layers, 211–25
30-inch roll-to-roll production for transparent electrodes, 211–25
large-scale pattern growth for stretchable transparent electrodes, 211–17
growth for thermally unstable noble metal nitrides by reactive magnetron sputtering, 185–209
Cu3N doping by co-sputtering, 203–8
nitrogen re-emission, 198–203
stoichometric Cu3N deposition, 190–8
measuring nucleation and growth processes, 3–17
atomic steps morphological instability, 15–16
atomic steps motion on growing and evaporating Si (111) surface, 11–15
atomic steps observation method, 6–8
Burton, Cabrera & Frank model for evaporating surface, 18–19
epitaxial growth theory, 4–6
future trends, 17
macro-vacancy formation, 20–1
two-dimensional-island nucleation and flow growth modes, 9–11
modelling deposition processes based on real-time observation, 83–114
experimental case studies, 101–13
experimental techniques, 87–101
future trends, 113–14
growth and timescales for in situ observation, 84–7
information sources and advice, 114
time resolved surface science, 83–4
network behaviour and nanostructure growth dynamics, 384–400
Monte Carlo simulated chemical vapour deposition, 389
Monte Carlo simulations, 390–2
origins of network behaviour, 390
simulation results, 392–9
sticking coefficient values, 388
thin film growth under shadowing and re-emission effects, 386
values of growth exponent in deposition techniques vs predictions of thin film growth models, 386
phase field modeling, 52–8
modeling, 53–4
numerical results, 54–7
substrate plasticity and buckling, 317–37
buckling structures localisation, 329–30
diamond-like thin carbon film deposited on a glass substrate, 318
experimental observations, 320–2
mechanical properties measurement, 333–6
modelling, 322–9
slip systems, 330–1
straight-sided buckles on 100nm thick film, 319
telephone cord buckling patterns on a Y2O3 thin film, 319
tensile tests, 331–3
surface roughness evolution analysis, 60–76
future trends, 76
hetero- or non-epitaxial growth, 69–76
homo-epitaxial growth, 61–9
two-dimensional-island nucleation growth mode, 9–11
two-phase rotation, 145–6
SEM images, 146
valence electrons, 23
Van der Pauw methods, 215
vapour-liquid-solid growth mechanism, 75
Volmer–Weber mode, 70
intensities along the Pb(10L) rod during deposition of Pb on Si(111), 41
X-ray photoelectron spectra (XPS), 220
X-ray photon correlation spectroscopy, 114
X-ray scattering, 95–6
anti-Bragg simulation, 98
reflectivity and growth oscillations, 97
XRD See X-ray diffraction
XRIM See interfacial X-ray microscopy
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