Dr. Steven H. Voldman is the first IEEE Fellow in the field of electrostatic discharge (ESD) for “Contributions in ESD protection in CMOS, Silicon on Insulator and Silicon Germanium Technology.” He received his B.S. in Engineering Science from the University of Buffalo (1979), a first M.S. EE (1981) from Massachusetts Institute of Technology (MIT), a second EE Degree (Engineer Degree) from MIT, a M.S. Engineering Physics (1986), and a Ph.D. in Electrical Engineering (EE) (1991) from University of Vermont under IBM’s Resident Study Fellow program.

Voldman was a member of the semiconductor development of IBM for 25 years. He was a member of the IBM’s Bipolar SRAM, CMOS DRAM, CMOS logic, Silicon on Insulator (SOI), 3-D memory team, BiCMOS and Silicon Germanium, RF CMOS, RF SOI, smart power technology development, and image processing technology teams. In 2007, Voldman joined the Qimonda Corporation as a member of the DRAM development team, working on 70, 58, 48, and 32 nm CMOS DRAM technology. In 2008, Voldman worked as a full-time ESD consultant for Taiwan Semiconductor Manufacturing Corporation (TSMC) supporting ESD and latchup development for 45 nm CMOS technology and a member of the TSMC Standard Cell Development team in Hsinchu, Taiwan. From 2009 to 2011, Steve was a Senior Principal Engineer working for the Intersil Corporation working on analog, power, and RF applications in RF CMOS, RF Silicon Germanium, and SOI. From 2013 to 2014, Dr. Voldman was a consultant for the Samsung Electronics Corporation in Dongtan, South Korea.

Dr. Voldman was the chairman of the SEMATECH ESD Working Group, from 1995 to 2000. In his SEMATECH Working Group, the effort focused on ESD technology benchmarking, the first transmission line pulse (TLP) standard development team, strategic planning, and JEDEC-ESD Association standards harmonization of the human body model (HBM) Standard. From 2000 to 2013, as Chairman of the ESD Association Work Group on TLP and very-fast TLP (VF-TLP), his team was responsible for initiating the first standard practice and standards for TLP and VF-TLP. Steve Voldman has been a member of the ESD Association Board of Directors, and Education Committee. He initiated the “ESD on Campus” program which was established to bring ESD lectures and interaction to university faculty and students internationally; the ESD on Campus program has reached over 40 universities in the United States, Korea, Singapore, Taiwan, Malaysia, Philippines, Thailand, India, and China. Dr. Voldman has taught short courses and tutorials on ESD, latchup, patenting, and invention.

He is a recipient of 250 issued US patents and has written over 150 technical papers in the area of ESD and CMOS latchup. Since 2007, he has served as an expert witness in patent litigation and has also founded a limited liability corporation (LLC) consulting business supporting patents, patent writing, and patent litigation. In his LLC, Voldman served as an expert witness for cases on DRAM development, semiconductor development, integrated circuits, and electrostatic discharge. He is presently writing patents for law firms. Steven Voldman provides tutorials and lectures on inventions, innovations, and patents in Malaysia, Sri Lanka, and the United States.

Dr. Voldman has also written many articles for Scientific American and is an author of the first book series on ESD and latchup (eight books): ESD: Physics and Devices, ESD: Circuits and Devices, ESD: Radio Frequency (RF) Technology and Circuits, Latchup, ESD: Failure Mechanisms and Models, ESD Design and Synthesis, ESD Basics: From Semiconductor Manufacturing to Product Use, and Electrical Overstress (EOS): Devices, Circuits and Systems, as well as a contributor to the book Silicon Germanium: Technology, Modeling and Design and Nanoelectronics: Nanowires, Molecular Electronics, and Nano-devices. In addition, the International Chinese editions of book ESD: Circuits and Devices, ESD: Radio Frequency (RF) Technology and Circuits, and ESD Design and Synthesis (2014) are also released.