- Cover
- List of Contributors
- Series Preface
- Preface
- Part I: Fundamentals of MBE
- 1 History of MBE
- 2 General Description of MBE
- 3 Migration‐Enhanced Epitaxy and its Application
- 3.1 Introduction
- 3.2 Toward Atomically Flat Surfaces in MBE
- 3.3 Principle of MEE
- 3.4 Growth of GaAs by MEE
- 3.5 Incommensurate Deposition and Migration of Ga Atoms
- 3.6 Application of MEE Deposition Sequence to Surface Research
- 3.7 Application of MEE to Selective Area Epitaxy
- 3.8 Summary
- Acknowledgments
- References
- 4 Nanostructure Formation Process of MBE
- 5 Ammonia Molecular Beam Epitaxy of III‐Nitrides
- 6 Mechanism of Selective Area Growth by MBE
- 6.1 Background
- 6.2 Growth Parameters for Ti Mask SAG
- 6.3 Initial Growth of Nanocolumns
- 6.4 Nitrogen Flow Rate Dependence of SAG
- 6.5 Diffusion Length of Ga Adatoms
- 6.6 Fine Control of Nanocolumn Arrays by SAG
- 6.7 Controlled Columnar Crystals from Micrometer to Nanometer Size
- 6.8 Nanotemplate SAG of AlGaN Nanocolumns
- 6.9 Conclusions and Outlook
- References
- Part II: MBE Technology for Electronic Devices Application
- Part III: MBE for Optoelectronic Devices
- 9 Applications of III–V Semiconductor Quantum Dots in Optoelectronic Devices
- 10 Applications of III–V Semiconductors for Mid‐infrared Lasers
- 11 Molecular Beam Epitaxial Growth of Terahertz Quantum Cascade Lasers
- 12 MBE of III‐Nitride Heterostructures for Optoelectronic Devices
- 13 III‐Nitride Quantum Dots for Optoelectronic Devices
- 14 Molecular‐Beam Epitaxy of Antimonides for Optoelectronic Devices
- 15 III–V Semiconductors for Infrared Detectors
- 16 MBE of III–V Semiconductors for Solar Cells
- Part IV: Magnetic Semiconductors and Spintronics Devices
- 17 III–V‐Based Magnetic Semiconductors and Spintronics Devices
- 18 III‐Nitride Dilute Magnetic Semiconductors
- 19 MBE Growth, Magnetic and Magneto‐optical Properties of II–VI DMSs
- 20 Ferromagnet/Semiconductor Heterostructures and Nanostructures Grown by Molecular Beam Epitaxy
- 21 MBE Growth of Ge‐Based Diluted Magnetic Semiconductors
- Part V: Challenge of MBE to New Materials and New Researches
- 22 Molecular Beam Epitaxial Growth of Topological Insulators
- 22.1 Introduction
- 22.2 MBE Growth of Bi2Se3 Family Three‐Dimensional Topological Insulators Family Three‐Dimensional Topological Insulators
- 22.3 Defects in MBE‐Grown Bi2Se3 Family TI Films
- 22.4 Band Structure Engineering in Ternary Bi2Se3 Family TIs
- 22.5 Magnetically Doped Bi2Se3 Family TIs
- 22.6 MBE Growth of 2D TI Materials
- 22.7 Summary
- Reference
- 23 Applications of Bismuth‐Containing III–V Semiconductors in Devices
- 24 MBE Growth of Graphene
- 25 MBE Growth and Device Applications of Ga2O3
- 26 Molecular Beam Epitaxy for Oxide Electronics
- 27 In‐situ STM Study of MBE Growth Process
- 27.1 Introduction
- 27.2 The Advantages of In‐situ STM Observation for Understanding Growth Mechanisms
- 27.3 In‐situ STM Observation of InAs Growth on GaAs(001) by STMBE System
- 27.4 In‐situ STM Observation of Various Growths and Treatments on GaAs Surfaces by STMBE System
- 27.5 Conclusion
- References
- 28 Heterovalent Semiconductor Structures and their Device Applications
- 28.1 Introduction
- 28.2 MBE Growth of Heterovalent Structures
- 28.3 ZnTe and GaSb/ZnTe Heterovalent Distributed Bragg Reflector Structures Grown on GaSb
- 28.4 CdTe/MgCdTe Structure and Heterovalent Devices Grown on InSb Substrates
- 28.5 Single‐Crystal CdTe/MgxCd1−xTe Solar Cells
- 28.6 CdTe/InSb Two‐Color Photodetectors
- Acknowledgments
- References
- 22 Molecular Beam Epitaxial Growth of Topological Insulators
- Index
- End User License Agreement
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