Rolf J. Aidam, Fraunhofer Institute for Applied Solid State Physics, Germany

Kouichi Akahane, National Institute of Information and Communication Technology, Japan

O. Ambacher, Fraunhofer Institute for Applied Solid State Physics, Germany

Hajime Asahi, The Institute of Scientific and Industrial Research, Osaka University, Japan

Harvey E. Beere, Department of Physics, Cavendish Laboratory, University of Cambridge, UK

Pallab Bhattacharya, Department of Electrical Engineering and Computer Science, University of Michigan, USA

Saniya Deshpande, Department of Electrical Engineering and Computer Science, University of Michigan, USA

E. Diwo, Fraunhofer Institute for Applied Solid State Physics, Germany

A. Feduniewicz‐Żmuda, Institute of High Pressure Physics, Polish Academy of Sciences, Poland

Xiao Feng, Tsinghua University, Beijing, China

Micha N. Fireman, University of Carifornia, Santa Barbara, USA

Tom Foxon, Nottingham University, UK

Thomas Frost, Department of Electrical Engineering and Computer Science, University of Michigan, USA

B.‐J. Godejohann, Fraunhofer Institute for Applied Solid State Physics, Germany

Arnab Hazari, Department of Electrical Engineering and Computer Science, University of Michigan, USA

Ke He, Tsinghua University, Beijing, China

Masataka Higashiwaki, National Institute of Information and Communications Technology, Tokyo, Japan

Yoshiji Horikoshi, Waseda University, Tokyo, Japan

Shafat Jahangir, Department of Electrical Engineering and Computer Science, University of Michigan, USA

Bharat Jalan, University of Minnesota, USA

Yuichi Kawamura, Osaka Prefecture University, Japan

Salim El Kazzi, Interuniversity Microelectronics Center, Belgium

L. Kirste, Fraunhofer Institute for Applied Solid State Physics, Germany

Katsumi Kishino, Sophia University, Tokyo, Japan

Philip C. Klipstein, SemiConductor Devices, Israel

Shinji Kuroda, Institute of Materials Science, University of Tsukuba, Japan

T. Lim, Fraunhofer Institute for Applied Solid State Physics, Germany

J. Marcelo J. Lopes, Paul‐Drude‐Institut für Festkörperelektronik, Berlin, Germany

Xucun Ma, Tsinghua University, Beijing, China

Hiro Munekata, Tokyo Institute of Technology, Japan

G. Muziol, Institute of High Pressure Physics, Polish Academy of Sciences, Poland

Yoshiaki Nakata, National Institute of Information and Communication Technology, Japan

Tianxiao Nie, Fert Beijing Institute, BDBC, and School of Electronic and Information Engineering, Beihang University, China and Device Research Laboratory, Department of Electrical Engineering, University of California, USA

K. Nowakowski‐Szkudlarek, Institute of High Pressure Physics, Polish Academy of Sciences, Poland

Abhinav Prakash, University of Minnesota, USA

R. Quay, Fraunhofer Institute for Applied Solid State Physics, Germany

David. A. Ritchie, Department of Physics, Cavendish Laboratory, University of Cambridge, UK

Marta Sawicka, Institute of High Pressure Physics, Polish Academy of Sciences, Poland and TopGaN Ltd., Poland

M. Siekacz, Institute of High Pressure Physics, Polish Academy of Sciences, Poland

Czeslaw Skierbiszewski, Institute of High Pressure Physics, Polish Academy of Sciences, Poland and TopGaN Ltd., Poland

James S. Speck, University of California, Santa Barbara, USA

Takeyoshi Sugaya, National Institute of Advanced Industrial Science and Technology, Japan

Masaaki Tanaka, Center for Spintronics Research Network, and Department of Electrical Engineering & Information Systems, and Institute for Nano Quantum Information Electronics, University of Tokyo, Japan

Jianshi Tang, IBM Thomas J. Watson Research Center, USA

Eric Tournie, IES, Université de Montpellier, France

Shiro Tsukamoto, National Institute of Technology, Anan College, Japan

H. Turski, Institute of High Pressure Physics, Polish Academy of Sciences, Poland

P. Waltereit, Fraunhofer Institute for Applied Solid State Physics, Germany

Kang L. Wang, Device Research Laboratory, Department of Electrical Engineering, University of California, USA

P. Wolny, Institute of High Pressure Physics, Polish Academy of Sciences, Poland

Qi‐Kun Xue, Tsinghua University, Beijing, China

Koichi Yamaguchi, The University of Electro‐Communications, Tokyo, Japan

Masahiro Yoshimoto, Kyoto Institute of Technology, Kyoto, Japan

Yong‐Hang Zhang, Arizona State University, Arizona, USA

Yi‐Kai Zhou, The Institute of Scientific and Industrial Research, Osaka University, Japan and Key Laboratory of Optoelectronic Material and Device, Mathematics & Science College, Shanghai Normal University, China