CONTENTS

Preface

Contributors

1. Introduction

Franklin (Feng) Tao, Yuan Zhu, and Steven L. Bernasek

1.1 Motivation for a Book on Functionalization of Semiconductor Surfaces

1.2 Surface Science as the Foundation of the Functionalization of Semiconductor Surfaces

1.2.1 Brief Description of the Development of Surface Science

1.2.2 Importance of Surface Science

1.2.3 Chemistry at the Interface of Two Phases

1.2.4 Surface Science at the Nanoscale

1.2.5 Surface Chemistry in the Functionalization of Semiconductor Surfaces

1.3 Organization of this Book

References

2. Surface Analytical Techniques

Ying Wei Cai and Steven L. Bernasek

2.1 Introduction

2.2 Surface Structure

2.2.1 Low-Energy Electron Diffraction

2.2.2 Ion Scattering Methods

2.2.3 Scanning Tunneling Microscopy and Atomic Force Microscopy

2.3 Surface Composition, Electronic Structure, and Vibrational Properties

2.3.1 Auger Electron Spectroscopy

2.3.2 Photoelectron Spectroscopy

2.3.3 Inverse Photoemission Spectroscopy

2.3.4 Vibrational Spectroscopy

2.3.4.1 Infrared Spectroscopy

2.3.4.2 High-Resolution Electron Energy Loss Spectroscopy

2.3.5 Synchrotron-Based Methods

2.3.5.1 Near-Edge X-Ray Absorption Fine Structure Spectroscopy

2.3.5.2 Energy Scanned PES

2.3.5.3 Glancing Incidence X-Ray Diffraction

2.4 Kinetic and Energetic Probes

2.4.1 Thermal Programmed Desorption

2.4.2 Molecular Beam Sources

2.5 Conclusions

References

3. Structures of Semiconductor Surfaces and Origins of Surface Reactivity with Organic Molecules

Yongquan Qu and Keli Han

3.1 Introduction

3.2 Geometry, Electronic Structure, and Reactivity of Clean Semiconductor Surfaces

3.2.1 Si(100)-(2×1), Ge(100)-(2×1), and Diamond(100)-(2×1) Surfaces

3.2.2 Si(111)-(7×7) Surface

3.3 Geometry and Electronic Structure of H-Terminated Semiconductor Surfaces

3.3.1 Preparation and Structure of H-Terminated Semiconductor Surfaces Under UHV

3.3.2 Preparation and Structure of H-Terminated Semiconductor Surfaces in Solution

3.3.3 Preparation and Structure of H-Terminated Semiconductor Surfaces Through Hydrogen Plasma Treatment

3.3.4 Reactivity of H-Terminated Semiconductor Surface Prepared Under UHV

3.3.5 Preparation and Structure of Partially H-Terminated Semiconductor Surfaces

3.3.6 Reactivity of Partially H-Terminated Semiconductor Surfaces Under Vacuum

3.4 Geometry and Electronic Structure of Halogen-Terminated Semiconductor Surfaces

3.4.1 Preparation of Halogen-Terminated Semiconductor Surfaces Under UHV

3.4.2 Preparation of Halogen-Terminated Semiconductor Surfaces from H-Terminated Semiconductor Surfaces

3.5 Reactivity of Hydrogen- or Halogen-Terminated Semiconductor Surfaces in Solution

3.5.1 Reactivity of Si and Ge Surfaces in Solution

3.5.2 Reactivity of Diamond Surfaces in Solution

3.6 Summary

Acknowledgments

References

4. Pericyclic Reactions of Organic Molecules at Semiconductor Surfaces

Keith T. Wong and Stacey F. Bent

4.1 Introduction

4.2 [2+2] Cycloaddition of Alkenes and Alkynes

4.2.1 Ethylene

4.2.2 Acetylene

4.2.3 Cis- and Trans-2-Butene

4.2.4 Cyclopentene

4.2.5 [2+2]-Like Cycloaddition on Si(111)-(7×7)

4.3 [4+2] Cycloaddition of Dienes

4.3.1 1,3-Butadiene and 2,3-Dimethyl-1,3-Butadiene

4.3.2 1,3-Cyclohexadiene

4.3.3 Cyclopentadiene

4.3.4 [4+2]-Like Cycloaddition on Si(111)-(7×7)

4.4 Cycloaddition of Unsaturated Organic Molecules Containing One or More Heteroatom

4.4.1 C=O-Containing Molecules

4.4.2 Nitriles

4.4.3 Isocyanates and Isothiocyanates

4.5 Summary

Acknowledgment

References

5. Chemical Binding of Five-Membered and Six-Membered Aromatic Molecules

Franklin (Feng) Tao and Steven L. Bernasek

5.1 Introduction

5.2 Five-Membered Aromatic Molecules Containing One Heteroatom

5.2.1 Thiophene, Furan, and Pyrrole on Si(111)-(7×7)

5.2.2 Thiophene, Furan, and Pyrrole on Si(100) and Ge(100)

5.3 Five-Membered Aromatic Molecules Containing Two Different Heteroatoms

5.4 Benzene

5.4.1 Different Binding Configurations on (100) Face of Silicon and Germanium

5.4.2 Di-Sigma Binding on Si(111)-(7×7)

5.5 Six-Membered Heteroatom Aromatic Molecules

5.6 Six-Membered Aromatic Molecules Containing Two Heteroatoms

5.7 Electronic and Structural Factors of the Semiconductor Surfaces for the Selection of Reaction Channels of Five-Membered and Six-Membered Aromatic Rings

References

6. Influence of Functional Groups in Substituted Aromatic Molecules on the Selection of Reaction Channel in Semiconductor Surface Functionalization

Andrew V. Teplyakov

6.1 Introduction

6.1.1 Scope of this Chapter

6.1.2 Structure of Most Common Elemental Semiconductor Surfaces: Comparison of Silicon with Germanium and Carbon

6.1.3 Brief Overview of the Types of Chemical Reactions Relevant for Aromatic Surface Modification of Clean Semiconductor Surfaces

6.2 Multifunctional Aromatic Reactions on Clean Silicon Surfaces

6.2.1 Homoaromatic Compounds Without Additional Functional Groups

6.2.2 Functionalized Aromatics

6.2.2.1 Dissociative Addition

6.2.2.2 Cycloaddition

6.2.3 Heteroaromatics: Aromaticity as a Driving Force in Surface Processes

6.2.4 Chemistry of Aromatic Compounds on Partially Hydrogen-Covered Silicon Surfaces

6.2.5 Delivery of Aromatic Groups onto a Fully Hydrogen Covered Silicon Surface

6.2.5.1 Hydrosilylation

6.2.5.2 Cyclocondensation

6.2.6 Delivery of Aromatic Compounds onto Protected Silicon Substrates

6.3 Summary

Acknowledgments

References

7. Covalent Binding of Polycyclic Aromatic Hydrocarbon Systems

Kian Soon Yong and GuO-Qin Xu

7.1 Introduction

7.2 PAHs on Si(100)-(2×1)

7.2.1 Naphthalene and Anthracene on Si(100)-(2×1)

7.2.2 Tetracene on Si(100)-(2×1)

7.2.3 Pentacene on Si(100)-(2×1)

7.2.4 Perylene on Si(100)-(2×1)

7.2.5 Coronene on Si(100)-(2×1)

7.2.6 Dibenzo[a, j] coronene on Si(100)-(2×1)

7.2.7 Acenaphthylene on Si(100)-(2×1)

7.3 PAHs on Si(111)-(7×7)

7.3.1 Naphthalene on Si(111)-(7×7)

7.3.2 Tetracene on Si(111)-(7×7)

7.3.3 Pentacene on Si(111)-(7×7)

7.4 Summary

References

8. Dative Bonding of Organic Molecules

Young Hwan Min, Hangil Lee, Do Hwan Kim, and Sehun Kim

8.1 Introduction

8.1.1 What is Dative Bonding?

8.1.2 Periodic Trends in Dative Bond Strength

8.1.3 Examples of Dative Bonding: Ammonia and Phosphine on Si(100) and Ge(100)

8.2 Dative Bonding of Lewis Bases (Nucleophilic)

8.2.1 Aliphatic Amines

8.2.1.1 Primary, Secondary, and Tertiary Amines on Si(100) and Ge(100)

8.2.1.2 Cyclic Aliphatic Amines on Si(100) and Ge(100)

8.2.1.3 Ethylenediamine on Ge(100)

8.2.2 Aromatic Amines

8.2.2.1 Aniline on Si(100) and Ge(100)

8.2.2.2 Five-Membered Heteroaromatic Amines: Pyrrole on Si(100) and Ge(100)

8.2.2.3 Six-Membered Heteroaromatic Amines

8.2.3 O-Containing Molecules

8.2.3.1 Alcohols on Si(100) and Ge(100)

8.2.3.2 Ketones on Si(100) and Ge(100)

8.2.3.3 Carboxyl Acids on Si(100) and Ge(100)

8.2.4 S-Containing Molecules

8.2.4.1 Thiophene on Si(100) and Ge(100)

8.3 Dative Bonding of Lewis Acids (Electrophilic)

8.4 Summary

References

9. Ab Initio Molecular Dynamics Studies of Conjugated Dienes on Semiconductor Surfaces

Mark E. Tuckerman and Yanli Zhang

9.1 Introduction

9.2 Computational Methods

9.2.1 Density Functional Theory

9.2.2 Ab Initio Molecular Dynamics

9.2.3 Plane Wave Bases and Surface Boundary Conditions

9.2.4 Electron Localization Methods

9.3 Reactions on the Si(100)-(2×1) Surface

9.3.1 Attachment of 1,3-Butadiene to the Si(100)-(2×1) Surface

9.3.2 Attachment of 1,3-Cyclohexadiene to the Si(100)-(2×1) Surface

9.4 Reactions on the SiC(100)-(3×2) Surface

9.5 Reactions on the SiC(100)-(2×2) Surface

9.6 Calculation of STM Images: Failure of Perturbative Techniques

References

10. Formation of Organic Nanostructures on Semiconductor Surfaces

Md. Zakir Hossain and Maki Kawai

10.1 Introduction

10.2 Experimental

10.3 Results and Discussion

10.3.1 Individual 1D Nanostructures on Si(100)–H: STM Study

10.3.1.1 Styrene and Its Derivatives on Si(100)-(2×1)–H

10.3.1.2 Long-Chain Alkenes on Si(100)-(2×1)–H

10.3.1.3 Cross-Row Nanostructure

10.3.1.4 Aldehyde and Ketone: Acetophenone–A Unique Example

10.3.2 Interconnected Junctions of 1D Nanostructures

10.3.2.1 Perpendicular Junction

10.3.2.2 One-Dimensional Heterojunction

10.3.3 UPS of 1D Nanostructures on the Surface

10.4 Conclusions

Acknowledgment

References

11. Formation of Organic Monolayers Through Wet Chemistry

Damien Aureau and Yves J. Chabal

11.1 Introduction, Motivation, and Scope of Chapter

11.1.1 Background

11.1.2 Formation of H-Terminated Silicon Surfaces

11.1.3 Stability of H-Terminated Silicon Surfaces

11.1.4 Approach

11.1.5 Outline

11.2 Techniques Characterizing Wet Chemically Functionalized Surfaces

11.2.1 X-Ray Photoelectron Spectroscopy

11.2.2 Infrared Absorption Spectroscopy

11.2.3 Secondary Ion Mass Spectrometry

11.2.4 Surface-Enhanced Raman Spectroscopy

11.2.5 Spectroscopic Ellipsometry

11.2.6 X-Ray Reflectivity

11.2.7 Contact Angle, Wettability

11.2.8 Photoluminescence

11.2.9 Electrical Measurements

11.2.10 Imaging Techniques

11.2.11 Electron and Atom Diffraction Methods

11.3 Hydrosilylation of H-Terminated Surfaces

11.3.1 Catalyst-Aided Reactions

11.3.2 Photochemically Induced Reactions

11.3.3 Thermally Activated Reactions

11.4 Electrochemistry of H-Terminated Surfaces

11.4.1 Cathodic Grafting

11.4.2 Anodic Grafting

11.5 Use of Halogen-Terminated Surfaces

11.6 Alcohol Reaction with H-Terminated Si Surfaces

11.7 Outlook

Acknowledgments

References

12. Chemical Stability of Organic Monolayers Formed in Solution

Leslie E. O'Leary, Erik Johansson, and Nathan S. Lewis

12.1 Reactivity of H-Terminated Silicon Surfaces

12.1.1 Background

12.1.1.1 Synthesis of H-Terminated Si Surfaces

12.1.2 Reactivity of H–Si

12.1.2.1 Aqueous Acidic Media

12.1.2.2 Aqueous Basic Media

12.1.2.3 Oxygen-Containing Environments

12.1.2.4 Alcohols

12.1.2.5 Metals

12.2 Reactivity of Halogen-Terminated Silicon Surfaces

12.2.1 Background

12.2.1.1 Synthesis of Cl-Terminated Surfaces

12.2.1.2 Synthesis of Br-Terminated Surfaces

12.2.1.3 Synthesis of I-Terminated Surfaces

12.2.2 Reactivity of Halogenated Silicon Surfaces

12.2.2.1 Halogen Etching

12.2.2.2 Aqueous Media

12.2.2.3 Oxygen-Containing Environments

12.2.2.4 Alcohols

12.2.2.5 Other Solvents

12.2.2.6 Metals

12.3 Carbon-Terminated Silicon Surfaces

12.3.1 Introduction

12.3.2 Structural and Electronic Characterization of Carbon-Terminated Silicon

12.3.2.1 Structural Characterization of CH3–Si(111)

12.3.2.2 Structural Characterization of Other Si–C Functionalized Surfaces

12.3.2.3 Electronic Characterization of Alkylated Silicon

12.3.3 Reactivity of C-Terminated Silicon Surfaces

12.3.3.1 Thermal Stability of Alkylated Silicon

12.3.3.2 Stability in Aqueous Conditions

12.3.3.3 Stability of Si–C Terminated Surfaces in Air

12.3.3.4 Stability of Si–C Terminated Surfaces in Alcohols

12.3.3.5 Stability in Other Common Solvents

12.3.3.6 Silicon-Organic Monolayer-Metal Systems

12.4 Applications and Strategies for Functionalized Silicon Surfaces

12.4.1 Tethered Redox Centers

12.4.2 Conductive Polymer Coatings

12.4.3 Metal Films

12.4.3.1 Stability Enhancement

12.4.3.2 Deposition on Organic Monolayers

12.4.4 Semiconducting and Nonmetallic Coatings

12.4.4.1 Stability Enhancement

12.4.4.2 Deposition on Si by ALD

12.5 Conclusions

References

13. Immobilization of Biomolecules at Semiconductor Interfaces

Robert J. Hamers

13.1 Introduction

13.2 Molecular and Biomolecular Interfaces to Semiconductors

13.2.1 Functionalization Strategies

13.2.2 Silane Derivatives

13.2.3 Phosphonic Acids

13.2.4 Alkene Grafting

13.3 DNA-Modified Semiconductor Surfaces

13.3.1 DNA-Modified Silicon

13.3.2 DNA-Modified Diamond

13.3.3 DNA on Metal Oxides

13.4 Proteins at Surfaces

13.4.1 Protein-Resistant Surfaces

13.4.2 Protein-Selective Surfaces

13.5 Covalent Biomolecular Interfaces for Direct Electrical Biosensing

13.5.1 Detection Methods on Planar Surfaces

13.5.2 Sensitivity Considerations

13.6 Nanowire Sensors

13.7 Summary

Acknowledgments

References

14. Perspective and Challenge

Franklin (Feng) Tao and Steven L. Bernasek

Index

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