Acronyms
| 1D1R | 1-Diode-1-resistor |
| 1S1R | 1-Selector-1-resistor |
| 1T | One transistor |
| 1T1C | 1-Transistor-1-capacitor |
| 1T1R | 1-Transistor-1-resistor |
| 2DEG | Two-dimensional electron gas |
| 3D | Three dimensional |
| AD | Analog digital |
| AF | Anti-ferromagnetic |
| AIST | Silver (Ag) Indium (In) Antimony (Sb) Tellurium (Te) |
| ALD | Atomic layer deposition |
| AM | Associative memory |
| ASIC | Application specific integrated circuit |
| ASL | All-spin logic |
| BARITT diode | Barrier-injection transit-time diode |
| BBE | Brain, body, environment based interactions |
| BBL | Buried bit line |
| BDA | 1,4-Benzenediamine |
| BDC60 | Bis(fullero[c]pyrolidin-1y1)benzene |
| BDT | 1,4-Benzenedithiol |
| BE | Bottom electrode |
| BEC | Bottom electrode contact |
| BEOL | Back end of line |
| BFO | Bismuth ferrite (BiFeO3) |
| BiSFET | Bilayer pseudo-spin field-effect transistor |
| BIST | Built-in self-test |
| BJT | Bipolar junction transistor |
| BL | Bit line |
| BLG | Bilayer graphene |
| BN | Beyond Neumann |
| CA | Cellular automata |
| CAM | Contend addressable memory |
| CBL | Cantilever bit line |
| CBRAM | Conductive-bridge random access memory |
| CDMA | Code division multiple access |
| CMIS | Current-induced magnetization switching |
| CMOS | Complementary metal oxide semiconductor |
| CNT | Carbon nanotube |
| CNTFET | Carbon nanotube field-effect transistor |
| CO | Carbon monoxide |
| CoFeB | Cobalt iron boron |
| CoPt | Cobalt platinum |
| CP-AFM | Conducting probe–atomic force microscopy |
| CPP | Current perpendicular to plane |
| CPU | Central processing unit |
| CRS | Complementary resistive switch |
| CTAFM | Conductive-tip atomic force microscopy |
| D | Density of states |
| DC | Direct contact |
| DC8 to DC12 | Eight to 12 carbon atoms in alkanedithiols |
| dCNT | Carbon nanotube diameter |
| DFT | Density functional theory |
| DIBL | Drain induced barrier lowering |
| DMRG method | Density matrix renormalization group method |
| DNA | Deoxyribonucleic acid |
| DoM | Degree of match |
| DOS | Density of states |
| DRAM | Dynamic random access memory |
| DVD | Digital versatile disc |
| e | Elementary charge of an electron |
| EBIC | Electron beam induced current |
| EBJs | Electromigrated break junctions |
| EEPROM | Electrically erasable programmable read only memory |
| Eg | Energy bandgap |
| EM | Electromechanical |
| EMB | Electrochemical metallization bridge |
| EOT | Equivalent oxide thickness |
| ERD | Emerging research devices |
| FD | Fully depleted |
| FeFET | Ferroelectric field effect transistor |
| Fe-NAND | Ferroelectric NAND |
| FeRAM | Ferroelectric random access memory |
| FERET | Facial recognition technology |
| FET | Field-effect transistor |
| FIB | Focused ion beam |
| FinFET | Multi-gate MOSFET with fin-shaped active structure |
| FL | Free layer |
| FM | Ferromagnetic |
| FN | Fowler–Nordheim |
| FOPE | Fluorinated oligomer |
| FPGA | Field programmable gate array |
| FRAM | Ferroelectric random access memory |
| FTJ | Ferroelectric tunnel junction |
| FWHM | Full width at half maximum |
| GAA | Gate all around |
| GaAs | Gallium arsenide |
| GMR | Giant magnetoresistive |
| GNM | Graphene nanomesh |
| GNR | Graphene nanoribbon |
| GQ | Quantum conductance |
| GSHE | Giant spin Hall effect |
| GST | Germanium (Ge), Antimony(Sb), Tellurium(Te) |
| h | Planck's constant |
| HAO | Hf-Al-O |
| HDD | Hard disk drive |
| HEMT | High electron mobility transistor |
| HF | Hydrofluoric acid |
| HKMG | High-k metal gate |
| HMAX | Hierarchical memory and X |
| HOMO | Highest occupied molecular orbital |
| HP | High performance |
| HRS | High resistance state |
| HTM | Hierarchical temporal memory |
| IC | Integrated circuit |
| ICT | Information and communication technologies |
| IEDM | International Electron Devices Meeting |
| IETS | Inelastic electron tunneling spectroscopy |
| I-MOS | Impact-ionization MOS |
| InAlAs | Indium aluminum arsenide |
| InAs | Indium arsenide |
| InGaAs | Indium gallium arsenide |
| iNML | In-plane nanomagnet logic |
| InP | Indium phosphide |
| InSb | Indium antimonide |
| Ioff | Off current |
| Ion | On current |
| IOP | Input–output processor |
| IPCM | Interfacial phase change memory |
| ITRS | International Technology Roadmap for Semiconductors |
| KJMA | Kolmogorov, Johnson and Mehl, and Avrami |
| Lch | Channel length |
| LEC | Lyric error correction |
| Lg | Gate length |
| LLG | Landau–Lifshitz–Gilbert |
| LRS | Low resistance state |
| Lspr | Spacer length |
| LtN | Less than Neumann |
| LUMO | Lowest unoccupied molecular orbital |
| m | Carrier effective mass |
| MC | Magneto current ratio |
| MCBJs | Mechanically controllable break junctions |
| MEMS | Micro-electro-mechanical systems |
| MFIS | Metal ferroelectric insulator semiconductor |
| MFTJ | Multiferroic tunnel junctions |
| MG | Multigate |
| mHEMT | Metamorphic HEMT |
| MIEC | Mixed ionic electronic conduction |
| MIM | Metal–insulator–metal |
| MIT | Metal–insulator transition |
| MLC | Multi level cell |
| MO-BF | Metal oxide–bipolar filamentary |
| MOS | Metal oxide semiconductor |
| MoS2 | Molybdenum disulfide |
| MoSe2 | Molybdenum diselenide |
| MOSFET | Metal oxide semiconductor field-effect transistor |
| MO-UF | Metal oxide–unipolar filamentary |
| MQCA: | Magnetic quantum-dot cellular automata |
| MRAM | Magnetic random access memory |
| M-SCM | Memory class storage class memory |
| MTJ | Magnetic tunnel junction |
| MtN | More than Neumann |
| Nc | Nanocrystal |
| NCC | Nano-current channel |
| ND | Notre Dame |
| NEMory | Memory cell based on a NEMS switch |
| NEMS | Nano-electro-mechanical systems |
| NIST: | National Institute of Standards and Technology |
| NML | Nanomagnet logic |
| nMOSFET | n-Channel MOSFET |
| N-T | N-Terminal relay |
| NV | Nonvolatile |
| NVM | Nonvolatile Memory |
| NWFET | Nanowire field-effect transistor |
| ODT | Au-octanedithol junction |
| ONO | Oxide–nitride–oxide |
| OOMMF | Object oriented micromagnetic framework |
| OPE | Oligophenyleneethynynylene |
| OPI | Oligophenyleneimine |
| OPV | Oligophenylenevinylene |
| OS | Operating system |
| OTP | One-time programmable |
| OTS | Ovonic threshold switch |
| PABA | Persistent asynchronous background activity |
| PC | Phase change |
| PCB | Phase change bridge |
| PCM | Phase change memory |
| PCRAM | Phase change random access memory |
| PDMS | Polydimethylsiloxane |
| PE | Piezoelectric |
| PE: | Processing element |
| PET | Piezoelectronic transistor |
| PF | Poole Frenkel |
| PFM | Piezoresponse force microscopy |
| pHEMT | Pseudomorphic HEMT |
| PIDS | Process integration, devices, and structures |
| PLA | Programmable logic array |
| PLL | Phase-locked loop |
| PM | Permanent magnet |
| pMA | Pars-mercaptoaniline |
| PMA | Perpendicular magnetic anisotropy |
| PMN-PT | Lead magnesium niobate – lead titanate |
| pMOSFET | p-Channel MOSFET |
| pNML: | Perpendicular nanomagnet logic |
| PR | Piezoresistive |
| PS-MOSFET | Pseudo-spin MOSFET |
| PZN-PT | Lead zinc niobate–lead titanate |
| PZT | Lead zirconate titanate |
| QCA | Quantum-dot cellular automata |
| R | Read |
| R6G | Rhodamine |
| RA | Resistance × area |
| RAM | Random access memories |
| Rc | Contact resistance |
| RC | Time constant of a circuit composed of resistors and capacitors |
| RDF | Random dopant fluctuation |
| ReRAM | Redox resistive random access memory |
| RF | Radio frequency |
| RIE | Reactive ion etch |
| RL | Reference layer |
| RQ | Quantum resistance |
| RRAM | Resistive random access memory |
| RTD | Resonant tunneling diode |
| RWL | Read word line |
| SAM | Self-assembled monolayer |
| SB | Schottky barrier |
| SBM | Suspended beam memory |
| SBT | SrBi2Ta2O9 |
| SCE | Short channel effect |
| SCLC | Space–charge limited conduction |
| SCM | Storage class memory |
| SEM | Scanning electron microscopy |
| SERS | Surface-enhanced Raman spectroscopy |
| SET | Single electron transistor |
| SEU | Single event upset |
| SFD: | Switching field distribution |
| SG | Suspended gate |
| Si | Silicon |
| SLL | Super lattice like |
| SNDM | Scanning nonlinear dielectric microscopy |
| SNM | Static noise margin |
| SoC | System on a chip |
| SOI | Silicon on insulator |
| SPDT | Single pole double-throw |
| SPT | Structural phase transition |
| SR | Structural relaxation |
| SR | Stochastic resonance |
| SRAM | Static random access memory |
| SS | Subthreshold swing |
| S-SCM | Storage class storage class memory |
| SSD | Solid state disk |
| STD | Spin torque device |
| STDP | Spike timing dependent plasticity |
| STM | Scanning tunneling microscopy |
| STM-BJ | Scanning tunnel microscope controlled break junction |
| STMG | Spin torque majority logic gate |
| STNO | Spin torque nano-oscillator |
| STS | Scanning tunneling spectroscopy |
| STS | Subthreshold slope |
| STT | Spin transfer torque |
| STT-MRAM | Spin torque transfer magnetic random access memory |
| SWD | Spin wave devices |
| SWNT | Single walled carbon nanotube |
| TBR | Thermal boundary resistance |
| TE | Top electrode |
| TEM | Transmission electron microscopy |
| TER | Tunnel electro-resistance |
| TFET | Tunnel field-effect transistor |
| THz | Tera hertz |
| TMR | Tunneling magnetoresistance |
| tox | Dielectric thickness |
| TTR | Time domain thermo reflectance |
| TVS | Transition voltage spectroscopy |
| UHV | Ultra-high vacuum |
| ULSI | Ultra scale integration |
| UPS | Ultraviolet photoelectron spectroscopy |
| v | Carrier velocity |
| VCCPCM | Vertical chain cell type phase change memory |
| VCM | Valence change mechanism |
| VCMA | Voltage controlled magnetic anisotropy |
| Vdd | Supply voltage |
| Vds | Drain–source bias |
| vF | Fermi velocity |
| Vgs | Gate voltage |
| VLSI | Very large scale integration |
| VMR | VLSI metallic CNT removal |
| Vpull-in | Pull-in voltage |
| Vt | Threshold voltage |
| Vth | Threshold voltage |
| W | Write |
| WL | Wordline |
| WS2 | Tungsten disulfide |
| WTA | Winner take all |
| WWL | Write word line |
| XANES | X-ray absorption near-edge structure |
| Δn | Excess carrier density |
| ϕSB | Schottky barrier height |
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