Index

absorption, 7, 16, 54, 65, 67, 69, 70, 73, 85, 86, 91, 92, 294-298, 301, 331, 332, 335, 338-343, 346, 386, 395

free-carrier, 332, 337, 339, 341, 343, 346

adhesion, 272, 375

adsorption, 363

AlGaAs, 172, 181, 338, 346, 388, 389

algorithm, 19, 334, 381, 382

aluminum, 66, 188, 205, 273, 275, 278, 279

amorphous silicon, 366

amplifier, 33, 47, 96, 407

antenna, 80, 81, 266

anti-crossing, 90, 92

antimony, 171

arsenic, 6, 7, 12, 29, 39, 43, 44, 47, 50, 51, 58, 72, 76, 77, 80, 81, 91, 97, 102, 107, 109, 112, 125, 127, 131, 132, 136, 146, 148, 163, 165, 166, 167, 169, 171, 178, 185, 194, 197, 199, 202, 206, 212, 213, 233, 241, 244, 251, 255, 259, 266, 267, 268, 270, 274, 300, 301, 303, 308, 309, 310, 326, 337, 340, 341, 344, 349, 351, 356, 357, 359, 368, 371, 378, 383, 384, 389, 396, 401, 403, 404, 412, 414, 416, 417, 418

atomic force microscopy (AFM), 9

atomic layer deposition (ALD), 146, 204, 421

ballistic transport, 113, 114, 141, 192, 294, 368, 369

band structure, 135, 290, 352, 361, 388

bandgap engineering, 294

bandwidth, 5, 7, 15, 16, 23, 25, 29, 31, 33, 34, 37, 39, 43, 81, 136

bit error rate (BER), 44

Boltzmann constant, 296

Boltzmann transport equation, 162

brain, 265, 266, 267, 268, 269, 270, 271, 272

breakdown voltage, 202

buffer layer, 110, 239

capacitance, 46, 80, 121, 131, 132, 134, 136, 140, 191, 212, 304

carbon, 107, 127, 131, 134, 139, 151, 202, 242, 245, 293, 365, 366, 374, 375, 376, 379, 381, 411

carrier leakage, 49, 50, 52, 53, 62

CdZnTe, 321, 322, 323, 324, 325, 326, 327, 328, 329, 346, 361, 362

cell library, 238

cellular automata, 130, 138

chalcogenide semiconductors, 107, 219, 220, 222, 223, 225, 228

chemical vapor deposition (CVD), 183, 184, 186, 187, 189, 204, 205

circular polarization, 255

clock distribution, 233, 235

clock frequency, 232, 235, 238

clock synchronization, 232, 233, 234, 235, 236

clocking, 235

CMOS, 7, 12, 16, 18, 30, 47, 109, 112, 113, 117, 119, 123, 124, 127, 129, 130, 132, 133, 135, 138, 139, 141, 143, 144, 146, 148, 149-152, 156, 169, 171, 179, 184, 187, 189, 191, 192, 210, 218, 232, 234, 237, 281

scaling, 31, 43, 81, 109, 113, 117-119, 122, 126, 129, 131, 132, 135, 139, 157, 159, 160, 169, 170, 171, 198, 201, 211-213, 224, 244, 281, 368, 369, 370, 376

complex materials, 19

Compton telescope, 333-345, 347

computer, 29, 33, 229, 230, 232, 270, 282

conduction band, 62, 76, 113, 119, 151, 171, 175, 178, 194, 282, 283, 284, 286, 290, 294, 352

conductivity, 160, 161, 162, 163, 169, 171, 176, 178, 179, 196, 222, 226, 227, 282, 296, 298, 299, 300, 302, 305, 412, 413, 414, 415, 418, 419, 421, 422

contact resistance, 112

copper, 29, 43, 51, 66, 89, 90, 278, 290, 413

correlation effects, 358, 359, 361

Coulomb blockade, 186, 202

crazy carpentry, 352

crosstalk, 29

current drive, 46, 112, 113, 115-117, 119, 152

current oscillations, 273

dense wavelength division multiplexing (DWDM), 33

depletion, 58, 59, 120, 387

detector

gamma radiation, 323, 326, 328

infared (IR), 52, 392, 393

device area, 55

diblock copolymer, 183, 184, 187

dielectric, 6, 7, 9, 10, 18, 19, 20, 21, 37, 39, 47, 57, 58, 80, 86, 91, 92, 112, 113, 117, 126, 132, 163, 165, 169, 172, 190, 202, 203, 204, 206, 209, 210, 212, 224, 244, 281, 311, 332

high-K, 116, 119, 125, 126, 154, 155, 160, 169, 172, 204, 209, 210, 244, 245, 281, 290

diffraction limit, 37, 38, 54, 62

diffusion coefficient, 256, 343

dislocations, 143

display, 90, 188

flat panel, 365

distributed feedback, 77, 83, 84

DNA, 75

domain, 5, 81, 95, 117, 136, 163, 251, 276, 282, 373, 402, 403, 404

doping profile, 58, 180

drain current, 114, 116, 121, 148, 165, 167, 180, 202, 241, 242, 244, 368, 369, 370

drain-induced barrier lowering

(DIBL), 113, 114, 115, 118, 152, 165

drift-diffusion, 162, 165, 166, 253

dynamic RAM. See memory

effective mass, 65, 110, 134, 171, 173, 175, 192, 194, 197, 282-284, 286, 287

efficiency, 8, 33, 40, 49-52, 62, 65, 68-72, 75, 79, 80, 81, 107, 112, 129, 130, 148, 234, 236, 237, 261, 294, 321-325, 331, 332, 333, 335, 338-343, 366, 371, 373, 375, 376, 384, 386, 411

injection, 69, 71, 305

electric field, 80, 99, 120, 136, 138, 144, 151, 160, 170, 179, 192, 194, 196, 201, 202, 204, 206, 207, 208, 220, 222, 225, 226, 228, 253, 254, 256, 257, 259, 293, 294, 297-304, 311-316, 371, 388, 389, 390, 391

electroluminescence, 45, 46, 59, 62

electron spin, 255, 258, 262

electron temperature, 388

electrooptic detection, 93

energy branching, 344, 347, 348, 349, 351, 352, 353, 354, 355, 356, 357, 358, 361, 363

energy conversion, 365

energy resolution, 321, 322, 323, 324, 325, 326, 328, 332, 344, 345, 347, 348, 356

epitaxy, 87, 143, 186, 315

chemical beam epitaxy (CBE), 307, 313

chemical beam epitaxy (MBE), 307

molecular beam epitaxy (MBE), 66, 87, 89, 154, 175, 177, 180, 181, 239

evolution, 20, 107, 127, 132, 144, 319, 353, 354, 373, 402, 413, 414, 417

excitons, 139, 311, 312, 313, 315, 371, 372, 373

fabrication technologies, 189

Fano factor, 347, 348, 349, 350, 351, 352, 353, 355, 357, 358, 359, 360, 361, 362, 363

feature size, 6, 9, 10, 11, 14, 18, 37, 109, 211, 215

Fermi level pinning, 181

ferroelectricity, 127

fin-FET. See transistor flexible electronics, 366

flip-flop, 233

fluctuations, 84, 92, 117, 125, 159, 169, 176, 181, 192, 196, 234, 236, 241, 242, 243, 245, 282, 350, 351, 357, 358, 361, 362, 386

fluorescence, 348, 350

focused ion beam (FIB), 97, 98, 103, 104

foundry, 234

Fourier transform infrared (FTIR)

spectrometer, 90

four-wave mixing, 97, 102, 103

frequency domain, 5

fuel cells, 411, 413, 419-421

solid oxide, 419-421

GaAs, 63, 64, 76, 86, 89, 92, 104, 115, 116, 141, 172, 177, 181, 192, 198, 199, 200, 255, 262, 275, 315, 332, 338, 346, 363, 385, 388, 389, 392

gain spectrum, 67, 71

gamma radiation, 332-334, 338, 343

gamma-ray imaging, 323, 326, 328

GaN, 175, 180, 181, 241, 242, 245

gate capacitance, 114, 115, 125, 128, 136

gate delay, 29, 159, 234, 235, 236

gate insulator, 117, 142, 144, 163

gate oxide, 110, 146, 159, 188, 201

gate stack, 116, 124, 125, 146, 147, 149, 155, 160, 172, 281

germanium, 109, 111, 115, 116, 119, 134, 141-157, 169, 185, 186, 190, 191, 195, 196, 197, 200, 228, 321, 324, 347-350, 362, 363

germanium-on-insulator (GeOI), 141-156, 191

gold, 262, 321

grain boundaries, 417, 422

graphene, 134, 135-139, 243, 249, 290, 293, 294, 303, 305, 306

hafnium oxide (HfO₂), 116, 124, 142, 146, 147, 155, 204, 206, 208, 210

Hall effect, 251, 252, 254, 255, 256, 259, 261, 262, 275, 277

spin (SHE), 249, 251, 255, 256, 260, 261, 262, 263

Hall effect measurement, 239

heterointerface, 333, 373

heterojunction, 135, 371, 375, 376

heterostructure, 67, 68, 70, 71, 72, 86, 119, 120, 126, 139, 156, 193, 239, 371

AlGaAs/GaAs, 388

InAlAs/InGaAs, 239, 240, 245

InP/InGaAs, 315

Si/SiGe, 184, 191, 192, 193, 196, 197, 198, 282, 290

SiGe/Si, 192, 199, 200, 290

hexagonal, 181, 183Hgl₂, 321, 322, 325, 329

hybrid technology multithreaded

architecture (HTMT), 230, 237

hydrogen, 58, 110, 142, 196, 411

hysteresis, 202, 275-277, 279, 395, 396-399, 402, 404-409

III-V compounds, 171

image processing, 5, 19

impact ionization, 61, 119, 121, 347-354, 361

implants, 155, 156

InAs, 63, 86, 96, 177, 178, 179, 180, 181, 192, 308, 309, 310, 311, 312, 313, 314, 315, 316, 388, 389, 392

infrared (IR) detector, 52, 392, 393

InGaAsP, 104, 333, 337, 345

InN, 175, 176, 177, 178, 179, 180, 181

InP, 52, 58, 59, 61, 239, 307-316, 332, 333, 335-340, 343, 345, 346, 392

input/output (I/O), 29, 41, 43

integrated circuit (IC), 7, 10, 16, 24, 46, 109, 123, 156, 189, 281, 323, 370, 374

integration, 5, 13, 14, 15, 16, 18, 36, 40, 42, 46, 47, 97, 109, 111, 113, 117, 118, 123, 125, 126, 129, 149, 150, 152, 153, 155, 156, 157, 171, 174, 179, 180, 183, 212, 216, 224, 269, 290, 333, 384

interconnect, 7, 16, 25, 29, 31, 48, 134, 150, 153, 290

optical, 3, 13, 19, 23, 25, 29, 30, 31, 37, 38, 39, 41, 42, 43

Internet, 23, 34, 35, 36

Internet protocol (IP), 34, 35, 42

intersubband transition, 89, 90, 91, 96

inversion layer, 151, 283, 284, 287

ion implantation, 110, 124

ITRS roadmap, 42, 116, 117, 125

Josephson junctions, 81, 137, 231, 238

Joule heating, 161, 169, 219, 225, 398, 407

kinetic equation, 353

laser

diode, 32, 35, 64

mid-infrared, 65

population inversion, 294, 302, 306

quantum cascade (QCL), 62, 63, 75, 77, 80, 81, 83, 84

quantum well, 104

quantum-box, 63

semiconductor, 14, 62, 63, 64, 73, 83

terahertz (THz), 84

tunable, 15, 100

vertical cavity surface emitting (VCSEL), 44, 45, 46, 47, 48

lattice constant, 193, 194, 416, 417, 422

lattice mismatch, 171LC circuit, 81, 82, 83

leakage current, 115, 116, 117, 123, 141, 159, 212, 281

lifetime, 63, 77, 97, 130, 338, 346, 385, 386, 387, 388, 389, 391

carrier, 63, 386, 387

photoelectron, 388, 389, 390, 391

lightly doped drain (LDD), 156

linewidth, 15

lithography, 7, 15, 55, 183, 192, 201, 204, 211, 212, 213, 214, 215, 217

electron-beam, 55, 57, 172, 275

next generation, 213

optical, 211, 213, 214

photo, 147, 188, 413

x-ray, 213

magnetoresistance, 200, 275, 276, 277, 306

magnetotransport, 171, 175, 177, 179, 192

membranes, 47, 313, 314, 411, 416, 418

memory

biological, 265-272

dynamic random access (DRAM), 109, 121, 123, 124, 211, 218, 232

flash, 122, 202, 211-218, 220, 223, 227, 270

NAND, 211

NOR flash, 201, 211

one-transistor (IT), 123, 126

phase-change random access (PRAM), 222, 224

static random-access (SRAM), 109, 123, 124, 126, 150, 156, 216, 290

memory cell, 201, 202, 203, 204, 205, 206, 209, 210, 215, 218, 219, 221, 222

mesa, 47, 146, 172

metal oxide semiconductor (MOS), 113, 151, 155, 159, 170

metal-insulator transition, 136, 395

microelectronics, 183, 213, 219, 270, 282, 365, 366

microprocessor, 29, 43, 230, 231, 233, 237

mid infrared (MIR), 63, 65, 75, 81, 83, 86, 92, 93

mobility, 110, 111, 113, 117, 124, 125, 141, 144-150, 154, 155, 159, 160, 162, 171-173, 179, 192, 193, 196-198, 200, 202, 209, 222, 240, 253, 261, 281, 290, 331, 369, 373, 374, 389

degradation, 159, 162

model, 162

modulation, 11, 14, 15, 16, 17, 24, 31, 32, 36, 38, 39, 40, 41, 42, 45, 46, 47, 92, 120, 136, 139, 193, 194, 195, 196, 245

modulator

electrooptic, 46

modules, 29, 32, 35, 36, 40

monolithic integration, 150

Monte Carlo simulation, 113, 114, 196, 200, 359, 362

Moss-Burstein shift, 332, 335, 339, 342

multiferroics, 140

multiple quantum well (MQW). See

quantum well

multithreading, 231, 237

nanoelectronics, 109, 118, 124, 170, 179, 183, 186, 189, 191, 192, 290, 305

nanofabrication, 11, 18, 97

nanomaterials, 183

nanotube

carbon (CNT), 119, 131, 134, 139, 151, 202, 242, 245, 366, 370, 374, 375, 376

nanowire, 110, 119, 125, 126, 131, 139, 157, 172, 174-178, 180, 181, 184, 190, 201-203, 209, 210, 242, 245, 367

national security, 229, 237

negative refraction, 14

neural network, 5, 19

neurons, 266, 267, 271

nitridation, 144, 145

nitrides, 181

noise, 29, 123, 239, 241, 242, 243, 244, 245, 324, 327, 347, 361, 381, 386, 390, 398, 407 1/f, 239, 243, 244

low-frequency, 240, 242, 244

nonvolatile memory, 126, 186, 190, 201, 202, 209, 210

numerical aperture (NA), 195, 213, 341

optical communications, 23, 24, 25, 29, 31, 32, 35, 37, 38, 39, 40, 41, 309

optical fiber, 21, 24, 29, 31, 32, 33, 35, 104

optical network, 25, 26, 27, 28, 29, 31, 35, 37, 40, 41, 42

optical pumping, 294, 295, 296, 297, 298, 300, 301, 305

package, 30, 98, 216

pair excitation energy, 347, 351, 352, 354, 356, 360, 361

parasitic capacitance, 131, 212

parasitic effects, 389

passivation, 58, 59, 62, 142, 144, 145, 153, 154, 185, 186, 196

percolation, 366, 367, 368, 369, 370, 371, 374, 402, 405, 407, 408

heterogeneous, 369

transition, 402, 405, 407, 408

permittivity, 132, 297

personal computer (PC), 211

petaflops, 230, 237

phase coherence, 176

phase transition, 138, 219, 220, 222, 223, 319, 395, 396, 404, 408, 409, 413

phonons, 160, 161, 162, 196, 197, 294, 301, 348, 350, 351, 360, 385, 389

bottleneck, 52, 63, 385

losses, 351

phosphorus, 155

photodetectors, 331, 333, 388, 392, 393

photodiodes, 35, 332, 333, 336, 337, 344

photon, 3, 39, 40, 65, 86, 87, 90, 91, 92, 93, 94, 95, 97, 102, 103, 294, 295, 307, 309, 313, 315, 316, 331, 332, 333, 334, 335, 338, 339, 340, 341, 342, 343, 344, 386, 387

collection efficiency, 341, 343, 344

recycling, 332, 335, 338, 340, 341, 342, 343, 344

photonic crystal, 3, 6, 14, 20, 22, 24, 39, 40, 55, 78, 313, 314, 316

photonics, 23, 24, 35, 36, 37, 40, 41, 190

photovoltaics, 3, 375

pinch-off, 368

planarization, 47, 150

plasma, 59, 97, 144, 175, 184, 185, 189

plasmonics, 38, 39, 42

platinum, 413, 421

Poisson equation, 194

polaritons, 86, 88, 89, 90, 91, 93, 94, 95, 96

polysilicon, 365

population inversion, 294, 302, 306

potential barrier, 386, 387, 388, 389, 391

potential well, 194

power dissipation, 138, 159

processor design, 230, 232, 233, 234

propagation delay, 37, 114, 115, 234

quantum box, 49, 63

quantum cellular automata (QCA), 128, 130, 131, 133, 136

quantum computation, 129, 249, 281

quantum confinement, 131, 148

quantum dot (QD), 44, 48, 63, 95, 172, 180, 185, 186, 189, 192, 307-316, 385, 387-393

quantum electrodynamics, 86, 95, 104

quantum entanglement, 313, 316

quantum interference, 130, 179

quantum key, 313

quantum well (QW), 49, 65, 66, 67, 71, 72, 73, 76, 86, 87, 89, 92, 96, 104, 172, 192, 197, 198, 200, 290, 388, 391

multiple (MQW), 69, 70, 71, 87, 96

quantum wire, 7, 14, 15, 16, 18, 179, 181, 200

qubit, 95

radiation, 37, 39, 75, 77, 81, 91, 294, 295, 296, 297, 298, 305, 306, 323, 326, 327, 328, 329, 331, 332, 333, 337, 344, 345, 350, 352, 361, 362, 386, 387, 390, 413

random parking, 351, 352, 357

rapid single flux quantum (RSFQ), 127, 138, 229, 230, 231, 232, 233, 234, 235, 236, 237, 238

recombination, 65, 66, 67, 69, 70, 71, 73, 301, 306, 312, 332, 335, 337, 341, 342, 345, 371, 376

radiative, 301, 343, 345

refractive index, 9, 10, 11, 39, 78, 81, 297, 298, 299, 301, 333, 404

relaxation time, 49, 52, 61, 256, 257, 296, 300, 301

reliability, 44, 49, 52, 53, 191, 210, 236, 375

resistance, 112, 115, 119, 137, 148, 153, 156, 163, 167, 178, 179, 219, 223, 224, 225, 243, 245, 276, 286, 367, 368, 398, 399, 407, 408

resolution, 5, 6, 8, 12, 18, 21, 79, 90, 91, 93, 98, 213, 311, 322, 323, 325, 328, 329, 332, 344, 345, 347, 379, 381, 383

resonant tunneling, 73

response time, 379, 381, 382

rf performance, 112

ring resonator, 199

rotating wave approximation, 87

saturation, 148, 162, 173, 174, 176, 414

velocity, 162

scattering, 16, 52, 62, 77, 84, 93, 160, 161, 162, 163, 169, 170, 172, 176, 179, 196, 197, 198, 243, 252, 257, 258, 259, 293, 306, 334, 347, 352, 369, 389, 392

Schottky, 109, 112, 171, 179, 204, 311, 312

barrier, 112, 171, 179

source-drain, 109, 112

Schrödinger equation, 175, 194, 196, 284

scintillators, 331-333, 335-341, 344-346, 362

self-assembled quantum dot (SAQD), 63, 315, 316, 392

self-organization, 180, 192

semiconductors I1I-V, 7, 16, 30, 47, 65, 73, 109, 119, 127, 134, 149, 171, 180, 348

work function, 117

sensors, 14, 57, 62, 96, 183, 365, 379, 380, 381, 383, 384, 385

network, 380, 382, 383, 384

series resistance, 112

sheet density, 51

short channel effects, 113, 115, 116, 160, 165

shot-glass model, 349, 351, 360

SiGe, 110, 119, 126, 143, 144, 154, 160, 169, 185, 189, 191, 192, 193, 195, 196, 197, 198, 199, 200, 282, 286, 290

silicon, 7, 11, 14, 16, 17, 19, 22, 29, 37, 39, 42, 43, 47, 97, 104, 107, 109, 112, 113, 119, 123, 127, 129, 135, 141, 142, 145, 146, 149, 154-157, 159-163, 165, 169, 170, 172, 180, 185-189, 201, 202, 204, 210, 216, 227, 232, 245, 249, 281-291, 362, 366, 367, 371, 374-376

photonics, 7, 19, 29, 39, 42

silicon carbide (SiC), 294, 297, 300, 306

silicon dioxide (SiO₂), 11, 14, 17, 37, 57, 97, 98, 103, 104, 143, 146, 162, 163, 165, 172, 175, 184, 186, 187, 188, 193, 202, 203, 204, 205, 206, 208, 210, 275, 307, 308, 311, 396, 421

silicon nitride (Si₃N₄), 57, 58, 59, 60, 61, 97, 98, 99, 103, 104, 203, 412, 414, 415, 416, 417, 418

silicon-on-insulator (SOI), 7-18, 30, 39, 109-115, 117, 121, 123-126, 129, 141, 143, 144, 148-156, 159, 160, 163-170, 173, 180, 209, 291

fully depleted, 148

ultra-thin, 117, 198

Single photon, 39, 40, 42, 85, 95, 309, 313

source, 309, 313

single-electron transistor (SET). See

transistor software, 23, 33

solar cells, 3, 365, 366, 371, 372, 373, 375, 376

space charge, 194

spin, 127, 130, 133, 134, 177, 179, 180, 181, 192, 249, 251-263, 274, 278-280, 282, 283, 290, 311, 312

accumulation, 251, 252, 256, 257, 262

current, 251, 252, 253, 256, 257, 258, 259, 260, 261, 262, 263

injection, 255, 259

relaxation, 181, 192, 252, 254, 257, 258, 259

transport, 134, 259, 261, 290

spin-orbit interaction, 130, 177, 251, 253, 254, 257, 258, 278, 282

spintronics, 128, 133, 138, 249, 261

spontaneous emission, 20, 81, 84

stored charge, 212

strain, 51, 66-68, 73, 110, 111, 117, 124, 150, 172, 173, 180, 192-194, 198, 200, 281, 283-290, 307, 402

relaxation, 110, 124, 173, 198

strained layers, 196

subthreshold slope, 110, 118, 119, 126, 132, 134, 136, 156, 174

superconductors, 95, 127, 137, 229, 230, 232-238, 273-275, 277-280, 395, 398

superlattice, 63, 184, 185, 190, 275, 276, 277

switching, 33-36, 39, 86, 91, 94, 95, 120, 126, 127, 129-134, 136, 159, 180, 191, 219, 220, 225, 227, 228, 282, 404, 418

telecommunications, 3, 6-8, 309, 313

temperature growth, 187

high, 46, 143, 150, 169, 220, 367, 371

low, 148, 150, 176, 179, 186, 187, 188, 195, 196, 197, 202, 210, 262, 278, 313, 367, 417

room, 49, 51, 57, 61, 62, 65-70, 72, 73, 83, 86, 90, 93, 119, 139, 142, 180, 194, 196-198, 202, 208, 232, 233, 261, 263, 278, 294, 301, 305, 324, 332, 335, 338, 341, 385-389, 391-393, 396, 398, 408, 412

temperature coefficient of resistance

(TCR), 398-408

terahertz (THz), 25, 38, 75, 80-86, 93-95, 294-306, 392

thermal budget, 112

thermal conductivity, 160, 161, 162, 163, 169, 170

thermal resistance, 163, 166, 167, 168

thermal stability, 199

thin film transistor (TFT). See

Transistor

three-dimensional (3D) integration, 117, 150, 189, 213, 216

threshold, 52, 65, 66-73, 114, 116, 117, 122, 125, 142, 144, 146, 149, 159, 165, 180, 202, 208, 220, 224, 301, 331, 347-351, 359, 361, 369, 370

voltage, 114, 116, 117, 120, 122, 125, 142, 144, 146-149, 159, 165, 180, 202, 208, 212, 215, 220, 224, 225, 227

time domain, 94, 95, 239

timing, 235

transconductance, 119, 165, 198

transfer characteristics, 110, 114, 120

transistor

carbon nanotube (CNT), 375

dual gate, 113-116, 119, 120, 122, 123, 160, 164-168

field-effect (FET), 119-121, 126, 128, 131, 134-140, 151, 152, 156, 157, 172, 174, 180, 188, 198, 202, 245, 306

fin-FET, 117, 118, 120, 123, 164-168

four-gate, 114

gate-all-around, 114, 116, 117, 125, 203, 210, 282

metal gate, 109, 117, 125, 141, 155, 169, 170, 187, 281, 290

metal oxide semiconductor

(MOSFET), 111, 112, 113, 114, 119, 120, 125, 141, 154, 159, 169, 170, 186, 203, 210, 281, 283, 288

modulation-doped (MODFET), 239, 240, 388, 393

molecular, 139

molecular (MT), 139

multi-channel, 100, 109, 116, 125, 157, 323

multi-gate (MuGFET), 109, 113, 114, 115, 117, 121, 123, 124, 125, 209, 281

single-electron (SET), 180

spin, 130

thin film (TFT), 366, 367, 369, 370

tunneling (TFET), 119, 120, 126, 139, 142, 151, 152, 156, 157, 174

transit time, 304, 390

transit-time device, 294, 302

transmission line, 236

trench, 121

tungsten, 156

tunnel (Esaki) diode, 134

tunneling, 115, 116, 119, 120, 125-127, 131, 134, 135, 137, 139, 142, 148, 151, 156, 157, 160, 201-207, 212, 224, 244, 294, 302-306, 387, 392

correlated, 136, 137

Fowler-Nordheim, 202

interband, 119, 121, 127, 148

junction, 134

two-dimensional electron gas (2DEG), 87, 175, 176, 178, 179, 192, 199, 200, 263, 284, 291

ultra large-scale integration (ULSI), 153, 155

vacuum radiation, 96

valence band, 67, 68, 69, 92, 119, 134, 142, 151, 192, 194, 195, 196, 294, 335, 348, 350, 352, 353, 354, 355, 356, 357, 358, 359, 360, 361

offset, 68

vanadium oxide (VO₂), 138, 319, 395, 396, 397, 398, 399, 401, 402, 404, 407, 408, 409

vapor-phase epitaxy (VPE), 63

variability, 116, 117, 125, 159, 366, 367

very large-scale integration (VLSI), 125, 141, 151, 156, 210, 218, 232, 238, 290

voxels, 333

wallplug efficiency, 52, 54, 56, 57, 62

wavefunction, 51, 284

waveguide

metal, 78, 80

polymer, 37

silicon, 14

slab, 6, 11

wavelength division multiplexing

(WDM), 28, 31, 32, 33, 35, 40-42

wave-pipelining, 235

wide bandgap semiconductor, 321, 323, 325

wireless, 383

x-ray diffraction (XRD), 91, 413, 416, 417, 418