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by Alexander Zaslavsky, Jimmy Xu, Serge Luryi
Future Trends in Microelectronics
Cover
Title Page
Copyright
List of Contributors
Preface
References
Acknowledgments
Part I: Future of Digital Silicon
1.1: Prospects of Future Si Technologies in the Data-Driven World
1 Introduction
2 Memory – DRAM
3 Memory – NAND
4 Logic technology
5 CMOS image sensors
6 Packaging technology
7 Silicon photonics technology
8 Concluding remarks
Acknowledgments
References
1.2: How Lithography Enables Moore's Law
1 Introduction
2 Moore's Law and the contribution of lithography
3 Lithography technology: past and present
4 Lithography technology: future
5 Summary
6 Conclusion
Acknowledgments
References
1.3: What Happened to Post-CMOS?
1 Introduction
2 General constraints on speed and energy
3 Guidelines for success
4 Benchmarking and examples
5 Discussion
6 Conclusion
Acknowledgments
References
1.4: Three-Dimensional Integration of Ge and Two-Dimensional Materials for One-Dimensional Devices
1 Introduction
2 FEOL technology and materials for 3D integration
3 Integration of “more than Moore” functionality
4 Implications of 3D integration at the system level
5 Conclusion
Acknowledgments
References
1.5: Challenges to Ultralow-Power Semiconductor Device Operation
1 Introduction
2 Ultimate MOS transistors
3 Small slope switches
4 Conclusion
Acknowledgments
References
1.6: A Universal Nonvolatile Processing Environment
1 Introduction
2 Universal nonvolatile processing environment
3 Bias-field-free spin-torque oscillator
4 Summary
Acknowledgments
References
1.7: Can MRAM (Finally) Be a Factor?
1 Introduction
2 What is MRAM?
3 Current limitations for stand-alone memories
4 Immediate opportunities: embedded memories
5 Conclusion
References
1.8: Nanomanufacturing for Electronics or Optoelectronics
1 Introduction
2 Nano-LEGO®
3 Tunnel devices
4 Split-gate transistors
5 Other nanoscale systems
6 Conclusion
Acknowledgments
References
Part II: New Materials and New Physics
2.1: Surface Waves Everywhere
1 Introduction
2 Water waves
3 Surface acoustic waves
4 Surface plasma waves and polaritons
5 Plasma waves in two-dimensional structures
6 Electronic surface states in solids
7 Dyakonov surface waves (DSWs)
References
2.2: Graphene and Atom-Thick 2D Materials: Device Application Prospects
1 Introduction
2 Conventional low-dimensional systems
3 New atomically thin material systems
4 Device application of new material systems
5 Components in Si technology
6 Graphene on Ge
7 Conclusion
References
2.3: Computing with Coupled Relaxation Oscillators
1 Introduction
2 Vanadium dioxide-based relaxation oscillators
3 Experimental demonstration of pairwise coupled HVFET oscillators
4 Computing with pairwise coupled HVFET oscillators
5 Associative computing using pairwise coupled oscillators
6 Conclusion
References
2.4: On the Field-Induced Insulator–Metal Transition in VO2 Films
1 Introduction
2 Electron concentration-induced transition
3 Field-induced transition in a film
4 Need for a ground plane
5 Conclusion
References
2.5: Group IV Alloys for Advanced Nano- and Optoelectronic Applications
1 Introduction
2 Epitaxial growth of GeSn layers by reactive gas source epitaxy
3 Optically pumped GeSn laser
4 Potential of GeSn alloys for electronic devices
5 Conclusion
Acknowledgments
References
2.6: High Sn-Content GeSn Light Emitters for Silicon Photonics
1 Introduction
2 Experimental details of the GeSn material system
3 Direct bandgap GeSn light emitting diodes
4 Group IV GeSn microdisk laser on Si(100)
5 Conclusion and outlook
References
2.7: Gallium Nitride-Based Lateral and Vertical Nanowire Devices
1 Introduction
2 Crystallographic study of GaN nanowires using TMAH wet etching
3 Ω-shaped-gate lateral AlGaN/GaN FETs
4 Gate-all-around vertical GaN FETs
5 Conclusion
Acknowledgments
References
2.8: Scribing Graphene Circuits
1 Introduction
2 Graphene oxide from graphite
3 GO exfoliation
4 Selective reduction of graphene oxide
5 Raman spectroscopy
6 Electrical properties of graphene oxide and reduced graphene oxide
7 Future perspectives
Acknowledgments
References
2.9: Structure and Electron Transport in Irradiated Monolayer Graphene
1 Introduction
2 Samples
3 Raman scattering (RS) spectra
4 Sample resistance
5 Hopping magnetoresistance
References
2.10: Interplay of Coulomb Blockade and Luttinger-Liquid Physics in Disordered 1D InAs Nanowires with Strong Spin–Orbit Coupling
1 Introduction
2 Sample preparation and the experimental setup
3 Experimental results
4 Conclusion
Acknowledgments
References
Part III: Microelectronics in Health, Energy Harvesting, and Communications
3.1: Image-Guided Intervention and Therapy: The First Time Right
1 Introduction
2 Societal challenge: Rapid rise of cardiovascular diseases
3 Societal challenge: Rapid rise of cancer
4 Drivers of change in healthcare
5 Conclusion
Acknowledgments
References
3.2: Rewiring the Nervous System, Without Wires
1 Introduction
2 Why go wireless?
3 One wireless recording solution used to explore primary motor cortex control of locomotion
4 Writing into the nervous system with epidural electrical stimulation of spinal circuits effectively modulates gait
5 Genetic technology brings a better model to neuroscience
6 The wireless bridge for closed-loop control and rehabilitation
7 Conclusion
Acknowledgments
References
3.3: Nanopower-Integrated Electronics for Energy Harvesting, Conversion, and Management
1 Introduction
2 Commercial ICs for micropower harvesting
3 State-of-the-art integrated nanocurrent power converters for energy-harvesting applications
4 A multisource-integrated energy-harvesting circuit
5 Conclusion
Acknowledgments
References
3.4: Will Composite Nanomaterials Replace Piezoelectric Thin Films for Energy Transduction Applications?
1 Introduction
2 Thin film piezoelectric materials and applications
3 Individual ZnO and GaN piezoelectric nanowires: experiments and simulations
4 Piezoelectric composite materials using nanowires
5 Conclusion
Acknowledgments
References
3.5: New Generation of Vertical-Cavity Surface-Emitting Lasers for Optical Interconnects
1 Introduction
2 VCSEL requirements
3 Optical leakage
4 Experiment
5 Simulation
6 Conclusion
Acknowledgments
References
3.6: Reconfigurable Infrared Photodetector Based on Asymmetrically Doped Double Quantum Wells for Multicolor and Remote Temperature Sensing
1 Introduction
2 Fabrication of DQWIP with asymmetrical doping
3 Optoelectronic characterization of DQWIPs
4 Temperature sensing
5 Conclusion
Acknowledgments
References
3.7: Tunable Photonic Molecules for Spectral Engineering in Dense Photonic Integration
1 Introduction
2 Photonic molecules and their spectral features
3 Coupling-controlled mode-splitting: GHz-operation on a tight footprint
4 Reconfigurable spectral control
5 Toward reconfigurable mode-splitting control
6 Conclusion
Acknowledgments
References
Index
End User License Agreement
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Index
absorption
adaptation
AlGaAs
AlGaN
algorithm
aluminum (Al)
amplifier
anticrossing
arsenic (As)
associative computing
asymmetric doping
atomic force microscopy (AFM)
atomic layer deposition (ALD)
ballistic transport
bandgap engineering
band structure
bandwidth
BiCMOS
bit error rate (BER)
brachytherapy
brain
brain-machine interface
brain-spinal interface
breakdown voltage
buffer layer
capacitance
carbon (C),,–
catheter
cell library
cellular automata
channel potential
channeling
chemical-mechanical polishing (CMP)
chemical vapor deposition (CVD)
metal-organic (MOCVD)
plasma-enhanced (PECVD)
chemotherapy
chip size
clock distribution
clock frequency
clocking
clock synchronization
CMOS
post-processing
scaling
comparators
computed tomography (CT)
computer
conduction band
conductivity
contact resistance
copper (Cu)
Coulomb blockade
critical dimension (CD)
crosstalk
current drive
current gain
data center
DC/DC converters
depletion
diamond
dielectric
high-
kappa
low-
kappa
digital video disk (DVD)
diode laser.
see
laser
dislocations
distance norm
domain
double heterostructure
drain current
drain-induced barrier lowering (DIBL)
Dyakonov surface wave
dynamic RAM (DRAM).
see
memory
effective mass
efficiency
electric field
electroluminescence
electron-electron interaction
electron-hole bilayer (EHB)
electron spin
energy conversion
energy harvesting
epitaxy
metal-organic vapor phase (MOVPE)
molecular beam epitaxy (MBE)
error correction
evolution
fabrication technologies
feature size
Fermi level pinning
ferroelectricity
field-effect transistor (FET).
see
transistor
fin-FET.
see
transistor
flexible
electronics
flip-flop
fluctuations
foundry
four-wave mixing
full adder
gait rehabilitation
gallium arsenide (GaAs)
gallium nitride (GaN)
gate capacitance
gate insulator
gate oxide
gate stack
gate structure
germanium (Ge)
germanium-on-insulator (GeOI)
germanium-tin (GeSn)
giant magnetoresistance (GMR)
gold
grain boundaries
graphene
nanoribbons
graphene oxide
reduced
hafnium oxide (HfO
2
)
Hall effect
fractional quantum Hall effect (FQHE)
heavy hole (HH)
heterojunction
heterojunction bipolar transistor (HBT).
see
transistor
heterostructure
AlGaAs/GaAs
GaN/GaAlN
Si/SiGe
vertical
high electron mobility transistor (HEMT).
see
transistor
hopping magnetoresistance
hot electron transistor.
see
transistor
hysteresis
image-guided therapy
image processing
impact ionization
implants
indium arsenide (InAs)
indium phosphide (InP)
input/output (I/O)
integrated circuit (IC),,–
integration
interband transition
interconnect
optical
Internet of Things (IoT)
Internet protocol (IP)
inversion
layer
irradiation
ion
ITRS roadmap
Kelvin wake
laser ArF
diode
KrF
microdisk
semiconductor
vertical cavity surface emitting (VCSEL)
VCSEL array
lattice mismatch
leakage current
lifetime
light-emitting diode (LED)
light hole
light-matter interaction
linewidth
lithography,,–
electron-beam
next generation
optical
photo
low-power electronics
Luttinger liquid
Mach- Zehnder interferometer (MZI)
magnetic anisotropy
magnetic random access memory (MRAM).
see
memory
magnetic resonance imaging (MRI)
magnetic tunnel junction (MTJ)
magnetization reversal
magnetoresistance
magnetotransport
majority gate
manufacturability
mass production
maximum power point tracking (MPPT)
membranes
memory
biological
dynamic random access (DRAM)
flash
magnetic random access (MRAM)
MRAM free layer
MRAM thermal stability
nonvolatile
spin transfer torque STT-MRAM
static random-access (SRAM)
memory cell
mesa
metal-insulator transition
metal oxide semiconductor FET (MOSFET).
see
transistor
metrology
micro-electromechanical systems
(MEMS)
microelectronics
mobility
mode-splitting
modulation
modulator
optical
modules
molecular diagnostics
monolithic integration
Moore's Law
more-than-Moore devices
multimedia
multiple quantum well (MQW).
see
quantum well
nanoimprinting
nanotube
carbon (CNT)
nanowire (NW)
neurons
neurotechnology
noise
shot
non-Boolean computation
nonvolatile logic
nonvolatile memory.
see
memory
numerical aperture (NA)
ohmic contact
optical cavity
optical communications
optical fiber
multi-mode
optical pumping
optical signal processing
oscillators
coupled
ring
packaging
parasitic capacitance
passivation
permittivity
personal computer (PC)
phase transition
phonons
phosphorus (P)
photodetectors
double-quantum well infrared
quantum well infrared
quantum well reconfigurable
photoluminescence (PL)
photon
photonic crystal
photonics
photoreceptors
photovoltaics (PV)
piezoelectricity
piezoelectric transducer
pinch-off
planarization
plasma
plasmonics
positron emission tomography (PET)
potential barrier
potential
well
power dissipation
power electronics
power management
propagation delay
quantum cellular automata (QCA)
quantum computation
quantum confinement
quantum dots (QDs)
built-in charge
quantum key
quantum well (QW)
multiple (MQW)
quantum wire
radiation
radionuclide monitoring
radiotherapy
Raman scattering
Raman spectroscopy
rapid thermal annealing (RTA)
Rayleigh scattering
reactive ion etching (RIE)
recombination
rectifiers, active
refractive index
reliability
resistance
resolution
resonant tunneling
sequential tunneling
resonator
coupled
microring
response time
reverse engineering
saturation
velocity
scattering
Schottky
barrier
self-assembly
semiconductor laser.
see
laser
semiconductors
III-V
group IV
workfunction
semimetals
sensors
network
sequential tunneling.
see
resonant tunneling
series resistance
sheet density
short channel effects
shot noise
silicon (Si)
photonics
silicon
carbide (SiC)
silicon dioxide (SiO
{2})
silicon-germanium (SiGe)
silicon nitride (Si
{3}
N
{4})
silicon-on-insulator (SOI)
fully-depleted
ultra-thin
single photon
small-slope switch
software
solar cells
sonication
spectral engineering
spin
current
injection
wave
spin-orbit interaction
spin-torque oscillator (STO)
spin transfer torque (STT)
spintronics
spin valve
spontaneous emission
Stark effect
strain
relaxation
subthreshold slope
subthreshold swing (SS)
supercomputer
superconductors
superlattice
switching
synchronization
synchronous electric charge extraction (SECE)
system integration
temperature
growth
sensing
terahertz (THz)
tetramethyl ammonium hydroxide (TMAH)
thermal budget
thermal conductivity
thermal stability
thin film transistor (TFT).
see
transistor
three-dimensional (3D) integration
threshold
voltage
timing
topological insulator
transconductance
transduction
devices
transfer characteristics
transistor
carbon nanotube (CNT)
dual gate
field-effect (FET)
fin-FET
gate-all-around
heterojunction bipolar (HBT)
high-electron mobility (HEMT)
hot electron
metal gate
metal oxide semiconductor (MOSFET)
multi-channel
multi-gate (MuGFET)
nanowire vertical
omega gate (trigate)
split-gate
thin film (TFT)
tunneling (TFET)
transition-metal dichalcogenides (TMDs)
trench
tungsten (W)
tunneling
interband
junction
oxide
two-dimensional electron gas (2DEG)
valence band
vanadium oxide (VO
2
)
variability
variable range hopping (VRH)
vertical cavity surface emitting laser (VCSEL).
see
laser
very large-scale integration (VLSI)
wave
plasma
surface
water
wavefunction
waveguide
silicon
wavelength division multiplexing (WDM)
DWDM
weak localization (WL)
wet etching
wireless
wiring
x-ray diffraction (XRD)
yield
zinc oxide (ZnO)
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