List of Contributors

  1. G. Ardila, IMEP-LAHC/Minatec, CNRS-Grenoble INP, UJF, 38016 Grenoble, France
  2. Francis Balestra, IMEP-LAHC, Minatec, Grenoble-Alpes University, 38016 Grenoble Cedex 1, France
  3. L. A. M. Barea, Department of Electrical Engineering, UFSCAR, São Carlos, SP 13565-905, Brazil
  4. J. P. H. Benschop, ASML, Veldhoven, The Netherlands
  5. D. A. Borton, School of Engineering and the Brown Institute for Brain Science, Brown University, Providence, RI 02912, USA
  6. C. Schulte-Braucks, Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
  7. D. Buca, Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
  8. S. Burger, Zuse Institute Berlin (ZIB), Takustraße 7, 14195 Berlin, Germany and JCMwave GmbH, Bolivarallee 22, 14050 Berlin, Germany
  9. A.V. Butenko, Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
  10. Kyung-Eun Byun, Device Laboratory, Samsung Advanced Institute of Technology, Suwon 443-803, South Korea
  11. Yeonchoo Cho, Device Laboratory, Samsung Advanced Institute of Technology, Suwon 443-803, South Korea
  12. J. K. Choi, Memory R&D Division, SK Hynix, Icheon-si, Gyeonggi-do 467-701, South Korea
  13. W. Crooijmans, Philips Research, High Tech Campus 34, Eindhoven, The Netherlands
  14. S. Datta, Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802, USA and Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA
  15. E. Dentoni Litta, School of Information and Communication Technology, KTH Royal Institute of Technology, 16440 Kista, Sweden
  16. M. Dini, Department of Electrical, Electronic and Information Engineering “G. Marconi” and Advanced Research Center on Electronic Systems “E. De Castro”, University of Bologna, Cesena, Via Venezia 52, 47521 Cesena FC, Italy
  17. N. von den Driesch, Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
  18. M. I. Dyakonov, Laboratoire Charles Coulomb, Université Montpellier, CNRS, Montpellier, France
  19. M. Filippi, Department of Electrical, Electronic and Information Engineering “G. Marconi” and Advanced Research Center on Electronic Systems “E. De Castro”, University of Bologna, Cesena, Via Venezia 52, 47521 Cesena FC, Italy
  20. N. C. Frateschi, “Gleb Wataghin” Physics Institute, University of Campinas, Campinas, SP 13083-859, Brazil
  21. F. Gamiz, Department of Electronics, CITIC-UGR, University of Granada, 18071 Granada, Spain
  22. R. Geiger, Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland
  23. M. Goldstein, Raymond and Beverly Sackler School of Physics and Astronomy, Tel-Aviv University, Tel Aviv 69978, Israel
  24. Detlev Grützmacher, Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
  25. A. Haran, Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
  26. J. M. Hartmann, Université Grenoble Alpes and CEA-LETI/MINATEC, 38054 Grenoble, France
  27. P.-E. Hellström, School of Information and Communication Technology, KTH Royal Institute of Technology, 16440 Kista, Sweden
  28. B. H. W. Hendriks, Philips Research, High Tech Campus 34, Eindhoven, The Netherlands
  29. Jinseong Heo, Device Laboratory, Samsung Advanced Institute of Technology, Suwon 443-803, South Korea
  30. R. Hevroni, Raymond and Beverly Sackler School of Physics and Astronomy, Tel-Aviv University, Tel Aviv 69978, Israel
  31. R. Hinchet, IMEP-LAHC/Minatec, CNRS-Grenoble INP, UJF, 38016 Grenoble, France
  32. Sungwoo Hwang, Device Laboratory, Samsung Advanced Institute of Technology, Suwon 443-803, South Korea
  33. Z. Ikonic, Institute of Microwaves and Photonics, University of Leeds, Leeds LS2 9JT, United Kingdom
  34. K.-S. Im, School of Electronics Engineering, Kyungpook National University, 80, Daehak-ro, Buk-gu, Daegu, South Korea
  35. Gitae Jeong, Semiconductor Business Division, Samsung Electronics Co. Ltd., Giheung, Gyeonggi-do, South Korea
  36. Y.-W. Jo, School of Electronics Engineering, Kyungpook National University, 80, Daehak-ro, Buk-gu, Daegu, South Korea
  37. Yu. Kaganovskii, Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
  38. M. Karpovski, Raymond and Beverly Sackler School of Physics and Astronomy, Tel-Aviv University, Tel Aviv 69978, Israel
  39. M. Kaveh, Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
  40. M. J. Kelly, Department of Engineering, Centre for Advanced Photonics and Electronics, University of Cambridge, 9 JJ Thomson Avenue, CB3 0FA Cambridge, United Kingdom and MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington, Wellington 6140, New Zealand
  41. Kinam Kim, Semiconductor Business Division, Samsung Electronics Co. Ltd., Giheung, Gyeonggi-do, South Korea
  42. E. Kogan, Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
  43. J.-R. Kropp, VI Systems GmbH, Hardenbergstraße 7, 10623 Berlin, Germany
  44. N. Ledentsov Jr., VI Systems GmbH, Hardenbergstraße 7, 10623 Berlin, Germany
  45. N. N. Ledentsov, VI Systems GmbH, Hardenbergstraße 7, 10623 Berlin, Germany
  46. J.-H. Lee, School of Electronics Engineering, Kyungpook National University, 80, Daehak-ro, Buk-gu, Daegu, South Korea
  47. Min-Hyun Lee, Device Laboratory, Samsung Advanced Institute of Technology, Suwon 443-803, South Korea
  48. S. Lenk, Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
  49. Y. Li, Department of Electrical Engineering, SUNY at Buffalo, Buffalo, NY 14260, USA
  50. Serge Luryi, Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, NY 11794, USA
  51. A. Makarov, Institute for Microelectronics, TU Wien, 1040 Vienna, Austria
  52. S. Mantl, Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
  53. C. Marquez, Department of Electronics, CITIC-UGR, University of Granada, 18071 Granada, Spain
  54. A. Michard, IMEP-LAHC/Minatec, CNRS-Grenoble INP, UJF, 38016 Grenoble, France
  55. D. Mioni, Philips Research, High Tech Campus 34, Eindhoven, The Netherlands
  56. V. Mitin, Department of Electrical Engineering, SUNY at Buffalo, Buffalo, NY 14260, USA
  57. L. Montès, IMEP-LAHC/Minatec, CNRS-Grenoble INP, UJF, 38016 Grenoble, France
  58. M. Mouis, IMEP-LAHC/Minatec, CNRS-Grenoble INP, UJF, 38016 Grenoble, France
  59. G. Mussler, Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
  60. D. Naveh, Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
  61. Jean-Pierre Nozières, eVaderis, Minatec Entreprises BHT, 7 Parvis Louis Néel, 38040 Grenoble, France and Spintec, Bat. 1005, 17 rue des Martyrs, 38054 Grenoble, France
  62. M. Östling, School of Information and Communication Technology, KTH Royal Institute of Technology, 16440 Kista, Sweden
  63. A. Palevski, Raymond and Beverly Sackler School of Physics and Astronomy, Tel-Aviv University, Tel Aviv 69978, Israel
  64. A. Parihar, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA
  65. Seongjun Park, Device Laboratory, Samsung Advanced Institute of Technology, Suwon 443-803, South Korea
  66. A. Raychowdhury, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA
  67. G. F. M. Rezende, “Gleb Wataghin” Physics Institute, University of Campinas, Campinas, SP 13083-859, Brazil
  68. V. Richter, Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
  69. N. Rodriguez, Department of Electronics, CITIC-UGR, University of Granada, 18071 Granada, Spain
  70. A. Romani, Department of Electrical, Electronic and Information Engineering “G. Marconi” and Advanced Research Center on Electronic Systems “E. De Castro”, University of Bologna, Cesena, Via Venezia 52, 47521 Cesena FC, Italy
  71. R. J. Ruiz, Department of Electronics, CITIC-UGR, University of Granada, 18071 Granada, Spain
  72. K. Sablon, U.S. Army Research Laboratory, Adelphi, MD 20783, USA
  73. E. Sangiorgi, Department of Electrical, Electronic and Information Engineering “G. Marconi” and Advanced Research Center on Electronic Systems “E. De Castro”, University of Bologna, Cesena, Via Venezia 52, 47521 Cesena FC, Italy
  74. F. Schmidt, Zuse Institute Berlin (ZIB), Takustraße 7, 14195 Berlin, Germany and JCMwave GmbH, Bolivarallee 22, 14050 Berlin, Germany
  75. E. Sela, Raymond and Beverly Sackler School of Physics and Astronomy, Tel-Aviv University, Tel Aviv 69978, Israel
  76. S. Selberherr, Institute for Microelectronics, TU Wien, 1040 Vienna, Austria
  77. A. Sergeev, U.S. Army Research Laboratory, Adelphi, MD 20783, USA
  78. A. Sharoni, Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
  79. V. A. Shchukin, VI Systems GmbH, Hardenbergstraße 7, 10623 Berlin, Germany
  80. V. Shelukhin, Raymond and Beverly Sackler School of Physics and Astronomy, Tel-Aviv University, Tel Aviv 69978, Israel
  81. I. Shlimak, Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
  82. Hadas Shtrikman, Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel
  83. N. Shukla, Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802, USA and Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA
  84. H. Sigg, Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland
  85. P. M. Solomon, IBM, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA
  86. D.-H. Son, School of Electronics Engineering, Kyungpook National University, 80, Daehak-ro, Buk-gu, Daegu, South Korea
  87. M. C. M. M. Souza, “Gleb Wataghin” Physics Institute, University of Campinas, Campinas, SP 13083-859, Brazil
  88. Boris Spivak, Department of Physics, University of Washington, Seattle, WA 98195, USA
  89. D. Stange, Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
  90. T. Stoica, Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
  91. V. Sverdlov, Institute for Microelectronics, TU Wien, 1040 Vienna, Austria
  92. R. Tao, IMEP-LAHC/Minatec, CNRS-Grenoble INP, UJF, 38016 Grenoble, France
  93. M. Tartagni, Department of Electrical, Electronic and Information Engineering “G. Marconi” and Advanced Research Center on Electronic Systems “E. De Castro”, University of Bologna, Cesena, Via Venezia 52, 47521 Cesena FC, Italy
  94. G. Thomain, Department of Electrical Engineering, SUNY at Buffalo, Buffalo, NY 14260, USA
  95. H. van Houten, Philips Research, High Tech Campus 34, Eindhoven, The Netherlands
  96. A. A. G. von Zuben, “Gleb Wataghin” Physics Institute, University of Campinas, Campinas, SP 13083-859, Brazil
  97. G. S. Wiederhecker, “Gleb Wataghin” Physics Institute, University of Campinas, Campinas, SP 13083-859, Brazil
  98. T. Windbacher, Institute for Microelectronics, TU Wien, 1040 Vienna, Austria
  99. S. Wirths, Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
  100. L. Wolfson, Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
  101. T. Yore, Department of Electrical Engineering, SUNY at Buffalo, Buffalo, NY 14260, USA
  102. T. Zabel, Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland
  103. X. Zhang, Department of Electrical Engineering, SUNY at Buffalo, Buffalo, NY 14260, USA
  104. E. Zion, Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
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