G. Ardila,IMEP-LAHC/Minatec, CNRS-Grenoble INP, UJF, 38016 Grenoble, France
Francis Balestra,IMEP-LAHC, Minatec, Grenoble-Alpes University, 38016 Grenoble Cedex 1, France
L. A. M. Barea,Department of Electrical Engineering, UFSCAR, São Carlos, SP 13565-905, Brazil
J. P. H. Benschop,ASML, Veldhoven, The Netherlands
D. A. Borton,School of Engineering and the Brown Institute for Brain Science, Brown University, Providence, RI 02912, USA
C. Schulte-Braucks,Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
D. Buca,Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
S. Burger,Zuse Institute Berlin (ZIB), Takustraße 7, 14195 Berlin, Germany and JCMwave GmbH, Bolivarallee 22, 14050 Berlin, Germany
A.V. Butenko,Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
Kyung-Eun Byun,Device Laboratory, Samsung Advanced Institute of Technology, Suwon 443-803, South Korea
Yeonchoo Cho,Device Laboratory, Samsung Advanced Institute of Technology, Suwon 443-803, South Korea
J. K. Choi,Memory R&D Division, SK Hynix, Icheon-si, Gyeonggi-do 467-701, South Korea
W. Crooijmans,Philips Research, High Tech Campus 34, Eindhoven, The Netherlands
S. Datta,Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802, USA and Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA
E. Dentoni Litta,School of Information and Communication Technology, KTH Royal Institute of Technology, 16440 Kista, Sweden
M. Dini,Department of Electrical, Electronic and Information Engineering “G. Marconi” and Advanced Research Center on Electronic Systems “E. De Castro”, University of Bologna, Cesena, Via Venezia 52, 47521 Cesena FC, Italy
N. von den Driesch,Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
M. I. Dyakonov,Laboratoire Charles Coulomb, Université Montpellier, CNRS, Montpellier, France
M. Filippi,Department of Electrical, Electronic and Information Engineering “G. Marconi” and Advanced Research Center on Electronic Systems “E. De Castro”, University of Bologna, Cesena, Via Venezia 52, 47521 Cesena FC, Italy
N. C. Frateschi,“Gleb Wataghin” Physics Institute, University of Campinas, Campinas, SP 13083-859, Brazil
F. Gamiz,Department of Electronics, CITIC-UGR, University of Granada, 18071 Granada, Spain
R. Geiger,Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland
M. Goldstein,Raymond and Beverly Sackler School of Physics and Astronomy, Tel-Aviv University, Tel Aviv 69978, Israel
A. Haran,Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
J. M. Hartmann,Université Grenoble Alpes and CEA-LETI/MINATEC, 38054 Grenoble, France
P.-E. Hellström,School of Information and Communication Technology, KTH Royal Institute of Technology, 16440 Kista, Sweden
B. H. W. Hendriks,Philips Research, High Tech Campus 34, Eindhoven, The Netherlands
Jinseong Heo,Device Laboratory, Samsung Advanced Institute of Technology, Suwon 443-803, South Korea
R. Hevroni,Raymond and Beverly Sackler School of Physics and Astronomy, Tel-Aviv University, Tel Aviv 69978, Israel
R. Hinchet,IMEP-LAHC/Minatec, CNRS-Grenoble INP, UJF, 38016 Grenoble, France
Sungwoo Hwang,Device Laboratory, Samsung Advanced Institute of Technology, Suwon 443-803, South Korea
Z. Ikonic,Institute of Microwaves and Photonics, University of Leeds, Leeds LS2 9JT, United Kingdom
K.-S. Im,School of Electronics Engineering, Kyungpook National University, 80, Daehak-ro, Buk-gu, Daegu, South Korea
Gitae Jeong,Semiconductor Business Division, Samsung Electronics Co. Ltd., Giheung, Gyeonggi-do, South Korea
Y.-W. Jo,School of Electronics Engineering, Kyungpook National University, 80, Daehak-ro, Buk-gu, Daegu, South Korea
Yu. Kaganovskii,Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
M. Karpovski,Raymond and Beverly Sackler School of Physics and Astronomy, Tel-Aviv University, Tel Aviv 69978, Israel
M. Kaveh,Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
M. J. Kelly,Department of Engineering, Centre for Advanced Photonics and Electronics, University of Cambridge, 9 JJ Thomson Avenue, CB3 0FA Cambridge, United Kingdom and MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington, Wellington 6140, New Zealand
Kinam Kim,Semiconductor Business Division, Samsung Electronics Co. Ltd., Giheung, Gyeonggi-do, South Korea
E. Kogan,Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
J.-R. Kropp,VI Systems GmbH, Hardenbergstraße 7, 10623 Berlin, Germany
N. Ledentsov Jr.,VI Systems GmbH, Hardenbergstraße 7, 10623 Berlin, Germany
N. N. Ledentsov,VI Systems GmbH, Hardenbergstraße 7, 10623 Berlin, Germany
J.-H. Lee,School of Electronics Engineering, Kyungpook National University, 80, Daehak-ro, Buk-gu, Daegu, South Korea
Min-Hyun Lee,Device Laboratory, Samsung Advanced Institute of Technology, Suwon 443-803, South Korea
S. Lenk,Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
Y. Li,Department of Electrical Engineering, SUNY at Buffalo, Buffalo, NY 14260, USA
Serge Luryi,Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, NY 11794, USA
A. Makarov,Institute for Microelectronics, TU Wien, 1040 Vienna, Austria
S. Mantl,Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
C. Marquez,Department of Electronics, CITIC-UGR, University of Granada, 18071 Granada, Spain
A. Michard,IMEP-LAHC/Minatec, CNRS-Grenoble INP, UJF, 38016 Grenoble, France
D. Mioni,Philips Research, High Tech Campus 34, Eindhoven, The Netherlands
V. Mitin,Department of Electrical Engineering, SUNY at Buffalo, Buffalo, NY 14260, USA
L. Montès,IMEP-LAHC/Minatec, CNRS-Grenoble INP, UJF, 38016 Grenoble, France
M. Mouis,IMEP-LAHC/Minatec, CNRS-Grenoble INP, UJF, 38016 Grenoble, France
G. Mussler,Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
D. Naveh,Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
Jean-Pierre Nozières,eVaderis, Minatec Entreprises BHT, 7 Parvis Louis Néel, 38040 Grenoble, France and Spintec, Bat. 1005, 17 rue des Martyrs, 38054 Grenoble, France
M. Östling,School of Information and Communication Technology, KTH Royal Institute of Technology, 16440 Kista, Sweden
A. Palevski,Raymond and Beverly Sackler School of Physics and Astronomy, Tel-Aviv University, Tel Aviv 69978, Israel
A. Parihar,School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA
Seongjun Park,Device Laboratory, Samsung Advanced Institute of Technology, Suwon 443-803, South Korea
A. Raychowdhury,School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA
G. F. M. Rezende,“Gleb Wataghin” Physics Institute, University of Campinas, Campinas, SP 13083-859, Brazil
V. Richter,Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
N. Rodriguez,Department of Electronics, CITIC-UGR, University of Granada, 18071 Granada, Spain
A. Romani,Department of Electrical, Electronic and Information Engineering “G. Marconi” and Advanced Research Center on Electronic Systems “E. De Castro”, University of Bologna, Cesena, Via Venezia 52, 47521 Cesena FC, Italy
R. J. Ruiz,Department of Electronics, CITIC-UGR, University of Granada, 18071 Granada, Spain
K. Sablon,U.S. Army Research Laboratory, Adelphi, MD 20783, USA
E. Sangiorgi,Department of Electrical, Electronic and Information Engineering “G. Marconi” and Advanced Research Center on Electronic Systems “E. De Castro”, University of Bologna, Cesena, Via Venezia 52, 47521 Cesena FC, Italy
F. Schmidt,Zuse Institute Berlin (ZIB), Takustraße 7, 14195 Berlin, Germany and JCMwave GmbH, Bolivarallee 22, 14050 Berlin, Germany
E. Sela,Raymond and Beverly Sackler School of Physics and Astronomy, Tel-Aviv University, Tel Aviv 69978, Israel
S. Selberherr,Institute for Microelectronics, TU Wien, 1040 Vienna, Austria
A. Sergeev,U.S. Army Research Laboratory, Adelphi, MD 20783, USA
A. Sharoni,Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
V. A. Shchukin,VI Systems GmbH, Hardenbergstraße 7, 10623 Berlin, Germany
V. Shelukhin,Raymond and Beverly Sackler School of Physics and Astronomy, Tel-Aviv University, Tel Aviv 69978, Israel
I. Shlimak,Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
Hadas Shtrikman,Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel
N. Shukla,Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802, USA and Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA
H. Sigg,Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland
P. M. Solomon,IBM, T. J. Watson Research Center, Yorktown Heights, NY 10598, USA
D.-H. Son,School of Electronics Engineering, Kyungpook National University, 80, Daehak-ro, Buk-gu, Daegu, South Korea
M. C. M. M. Souza,“Gleb Wataghin” Physics Institute, University of Campinas, Campinas, SP 13083-859, Brazil
Boris Spivak,Department of Physics, University of Washington, Seattle, WA 98195, USA
D. Stange,Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
T. Stoica,Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
V. Sverdlov,Institute for Microelectronics, TU Wien, 1040 Vienna, Austria
R. Tao,IMEP-LAHC/Minatec, CNRS-Grenoble INP, UJF, 38016 Grenoble, France
M. Tartagni,Department of Electrical, Electronic and Information Engineering “G. Marconi” and Advanced Research Center on Electronic Systems “E. De Castro”, University of Bologna, Cesena, Via Venezia 52, 47521 Cesena FC, Italy
G. Thomain,Department of Electrical Engineering, SUNY at Buffalo, Buffalo, NY 14260, USA
H. van Houten,Philips Research, High Tech Campus 34, Eindhoven, The Netherlands
A. A. G. von Zuben,“Gleb Wataghin” Physics Institute, University of Campinas, Campinas, SP 13083-859, Brazil
G. S. Wiederhecker,“Gleb Wataghin” Physics Institute, University of Campinas, Campinas, SP 13083-859, Brazil
T. Windbacher,Institute for Microelectronics, TU Wien, 1040 Vienna, Austria
S. Wirths,Peter Grünberg Institut-9 and JARA-FIT, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
L. Wolfson,Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel
T. Yore,Department of Electrical Engineering, SUNY at Buffalo, Buffalo, NY 14260, USA
T. Zabel,Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland
X. Zhang,Department of Electrical Engineering, SUNY at Buffalo, Buffalo, NY 14260, USA
E. Zion,Department of Physics and Faculty of Engineering, Jack and Pearl Institute of Advanced Technology, Bar Ilan University, Ramat Gan 52900, Israel