108 Design of CMOS Millimeter-Wave and Terahertz Integrated Circuits
metho d introduced in [172];
S11 S12
S21 S22
=
"
1+Z
2
0
(Y
0o
cot θ−ωC)(Y
0e
cot θ−ωC)
∆Y
jZ
0
(Y
0o
−Y
0e
) cot θ
∆Y
jZ
0
(Y
0o
−Y
0e
) cot θ
∆Y
1+Z
2
0
(Y
0o
cot θ−ωC)(Y
0e
cot θ−ωC)
∆Y
#
(5.3)
with
∆Y = Z
2
0
[ωC(Y
0o
+ Y
0e
) cot θ − ω
2
C
2
− Y
0o
Y
0e
cot
2
θ]
+ jZ
0
[2ωC − (Y
0o
+ Y
0e
) cot θ] + 1. (5.4)
As such, the coupling phase (φ) can be expressed as:
φ =
π
2
−tan
−1
2ωZ
0
C − Z
0
(Y
0o
+ Y
0e
)cotθ
1 + Z
2
0
[ωC(Y
0o
+ Y
0e
) cot θ − ω
2
C
2
− Y
0o
Y
0e
cot
2
θ]
. (5.5)
When the impedance of both ends are perfectly matched (Z
2
0
Y
0o
Y
0e
= 1), a
zero coupling phase condition (φ = 0) is s atisfied in (5.5) with
cot(βl) −
ωC
Y
0e
cot(βl) −
ωC
Y
0o
= 1. (5.6)
The required physical length l can be derived a s
l =
1
ω
√
µε
cot
−1
ωC(Y
0o
+ Y
0e
)
2Y
0o
Y
0e
+
s
1 +
ωC(Y
0o
− Y
0e
)
2Y
0o
Y
0e
2
. (5.7)
Note that (5.7) is obtained as the minimum p ositive solution of (5.6), which
provides the smallest feature size of zero-phase-coupler in the practical IC
layout.
With an inter-digital configur ation layout, a s shown in Figure 5.1(b), lower
coupling loss can be achieved [173]. The coupling coefficient in zero-phase
mode |S21
ZP
| can be derived from (5.3 ) and (5.6):
|S21
ZP
| =
(Y
0e
cot θ − ωC) − (Y
0o
cot θ − ωC)
(Y
0e
cot θ − ωC) + (Y
0o
cot θ − ωC)
, (5.8 )
which can be optimized for the start-up condition by a higher odd-mode ad-
mittance (Y
0o
) or a lower even-mode admittance (Y
0o
).
Clearly, a low loss can be obta ine d by a much smaller physical length l and
a lower Y
e
for multiple ZPC-based oscillator unit-cells under the zero-phase
condition. Compared to the conventional coupler design with T-line by single
strip on e ach side, the proposed ZPC structure can simultaneously increase
Y
0o
and reduce Y
0e
, which can be further optimized based on the relation of
coupler length l vs. loaded capacita nc es and even-mode admittance as shown
in Figure 5.2. The coupling loss needs to be compensated to start os cillation,
which means |S21
G
m
| · |S21
ZP
| > 1, where S21
G
m
is the equivale nt gain of
shunt negative conductance from active devices.