Coupled Oscillator Network 133
Table 5.3 : Performance Comparison with Recently Published THz
Signal Sources
Parameters
[176] [177] [178] [179] This Work
(Simulated)
Technology
65-nm
CMOS
65-nm
CMOS
65-nm
CMOS
65-nm
CMOS
65-nm
CMOS
Center Fre-
quency (GHz)
290 294 288 256 286
FTR (%)
4.5 1.1 1.7 6.5 10.5
P
OUT
(dBm)
−1.2 −3. 3 −1.5 4.1 2.8
Integrated DC
Bias Network
NO YES NO NO YES
DC Power (mW)
325 258 275 227 288
Power Efficiency
(%)
0.23 0.19 0.25 1.14 0.66
A
CORE
(µm
2
)
600×600 630×330 240×150* 640×470 180×340
P
OUT
/A
CORE
(mw/mm
2
)
2.1 2.3 19.7 8.2 31.1
∗The area of the power combining network is included in the core area calculation.
power efficiency performance. The output power of the proposed design is
slightly lower than [179] due to integration of DC bias network, which will at
least contribute 1.5-dB loss to the output signal. Note that a signal source with
DC Bias Network can be directly us ed for on-chip integration with function
blocks such as a mixer or antenna.
5.4 Conclusion
The CMOS high-output power signal s ources are demonstrated from mm-wave
to THz by coupled oscilla tor network with ZPC-based oscillator unit-cells,
which helps greatly increase the output power and efficiency by the in-phase
power combination. The fabricated 60-GHz VCO in 65-nm CMOS has a com-
pact core chip area of 0.11 mm
2
, and it is meas ured with 2-mW output power,
-116.7-dBc/Hz phase noise at 10MHz offset, and 15.8% frequency tuning range
(FTR) centered at 63.1 GHz. The fabricated 140GHz signal source with in-
jection locking in 65-nm CMOS has a compact core chip area of 0.13 mm
2
,
and it is measured with 3.5-mW peak output power, 2.4% power efficiency,
26.9-mW/mm
2
power density and 9.7% FTR centered at 133.5 GHz. A 280-
GHz high-power signal source is designed by connecting the 2nd harmonic
outputs of two 140GHz CO Ns in parallel, which a re both injection locked
with the same phase and magnitude. It is simulated with an output power of
+2.8 dBm, a power efficiency of 0 .66%, and a frequency tuning range of 10.5%
from 2 72 GHz to 302 GHz. In the fo llowing section, CMOS-based THz signal
detection will be discussed.
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