List of Figures xxi
12.6 Images captured by imaging system with the proposed 135 -
GHz SRX receiver: various types of oil. . . . . . . . . . . . . 266
12.7 Absorption ratio of various types of oil detected at 135 GHz. 267
12.8 Schematic of THz down-conversion mixer at 280 GHz. . . . 269
12.9 Simulation results of proposed mixer. . . . . . . . . . . . . . 270
12.10 Schematic of the thr ee-stage power gain amplifier and the out-
put buffer. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 271
12.11 Simulation results of the three-stage power gain amplifier with
output buffer. . . . . . . . . . . . . . . . . . . . . . . . . . . 272
12.12 Chip micro photograph of the proposed CMOS 280-GHz het-
erodyne receiver with on-chip integra ted circular polarized
SIW antenna. . . . . . . . . . . . . . . . . . . . . . . . . . . 272
12.13 Equipment setup for 280-GHz re ceiver measurement. . . . . 273
12.14 Gain and sensitivity measurement results when sweeping RF
and LO frequencies with F
LO
= F
RF
+ 3GHz. . . . . . . . . 273
12.15 Gain measurement results when sweeping RF and LO frequen-
cies with F
IF
= F
LO
+ 280GHz. . . . . . . . . . . . . . . . . 274
12.16 Receiver sensitivity a t 250 GHz versus receiver resolution
bandwidth. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 274
12.17 Measurement setup of THz image system. . . . . . . . . . . 277
12.18 Captured T Hz image results of Panadol pills and skin samples
under 240 GHz and 280 GHz radiation. . . . . . . . . . . . . 278
12.19 The block diagram of CMOS-based THz reflective imaging
system. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 279
12.20 Schematic of proposed differe ntial down-conversion mixer with
an input network of 90
◦
high-Z
0
T-line. . . . . . . . . . . . . 280
12.21 Post-layout simulation results of the high-Z
0
T-line network
with 90
◦
phase delay. . . . . . . . . . . . . . . . . . . . . . . 281
12.22 Post-layout simulation results. . . . . . . . . . . . . . . . . . 282
12.23 2D LWA array with 2×13 unit cells. . . . . . . . . . . . . . . 283
12.24 HFSS simulated radiation pattern of the 2D LWA array at
280 GHz in (a) 3D plot, and (b) polar plots in ZOX and ZOY
planes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 284
12.25 Simulated antenna input S11 and gain at broadside direction
(Z-axis). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 285
12.26 Cadence layout of the proposed 280 GHz transceiver in CMOS. 287
13.1 Development of data rates in wireline, nomadic and wireless
systems. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 290
13.2 (a) Need of near-field wireless communication classified by
data column; (b) potential appellations of a near-field THz
big data rate wireless link . . . . . . . . . . . . . . . . . . . . 291
13.3 Block diagram of the proposed sub-THz MIMO phased ar ray
transceiver architecture and transceiver (TX) front-end struc-
ture. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 293
xxii List of Figures
14.1 The layout a nd E-field distribution of the on-chip SPP/
conventional T-line in lossy substrate environment. . . . . . 298
14.2 (a) Simulated input reflection coefficient of the designed on-
chip SPP T-line for different groove depth h with d = 15 µm,
a = 2 .4 µm, w = 5 µm. (b–c) The simulated amplitude of
E-field distribution of the designed SPP T-line (a: h = 6 µm,
b: h = 12 µm) evaluated at the xy plane using the CMOS
process. (d–e) E-field distribution on the cross-section of the
corrugated metal strip: h = 6 µm, d: h = 12 µm) at yz pla ne ,
also at 3 THz, a nd (f) the simulated dispersion diagram with
different periodic pitch d and groove depth h ranged from 20
µm to 40 µm. (g ) E-field enhancement along the vertical cut
for h = 6 µm and h = 12 µm, respectively. . . . . . . . . . . 300
14.3 (a) The simulated amplitude of E-field distribution of the con-
ventional transmissio n line evaluated at the xy plane using the
same process, a nd (b) E-field distribution on the cross-section
of the corrugated metal strip (yz plane) also at 3 THz. . . . 30 1
14.4 (a) T he layout of SPP T-line including EM wave to surface
wave (o r vice versa) converter and with M1 as ground, (b)
converter design and conceptual E-field distribution, and (c)
the simulated res ult of reflection coefficient (S
11
). . . . . . . 302
14.5 (a) Simulated transmission coefficient of the SPP guided wave
as a function of the groove depth h with a = 2.4 µm, w =
5 µm, d = 15 µm, (b) comparison of simulated inse rtion loss
for both SPP T-line and conventional T-line with different
length. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 304
14.6 (a and b) The simulated electrical field distribution on the
cross-section for both SPP and T-line coupler in 65 nm CMOS
technology, the parameters configuration is the same as in Fig-
ure 14.2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 306
14.7 (a) The measured a nd simulated results of the input reflection
coefficient (S
11
) for the SPP coupler, and the simulated S
11
of
the T-line coupler. The S parameter extraction fo r the T-line
coupler is perfo rmed after the parameter fitting is done, (b) the
measured and simulated result of the crosstalk (S
41
) for the
SPP coupler, and the simulation result for the conventional T-
line coupler as a comparison, (c) the simulated insertion loss
(S
21
) for both SPP/T-line couplers, and (d) the simulated
near-ended coupling (S
31
) for both SPP/T-line coupler. . . . 308
14.8 The schematic of (a) conve ntional single SRR and (b) stacking
SRR structure; the equivalent circuit of (c) the single SRR, (d)
stacking SRR, and (e) the simplified version of (d). . . . . . 312
14.9 The proposed modulator evolved from the stacked SRR shown
in Figure 1 4.1(b). . . . . . . . . . . . . . . . . . . . . . . . . 313
List of Figures xxii i
14.10 (a) The simulated body current distribution of the single SRR
resonator at magnetic resonanc e frequency (140 GHz), and (b)
the simulated body c urrent distribution of the stacked SRR
resonator at ma gnetic resonance frequency (140 GHz). . . . 314
14.11 (a) The simulated body current distribution of the single SRR
resonator at magnetic resonanc e frequency (140 GHz), and (b)
Figure 14.4: the simulated body current distribution of the
stacked SRR resonator at magnetic resonance frequency (140
GHz). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 316
14.12 (a) The insertion loss (isolation) at on (off) state of the pro-
posed modulator and the resulting extinction ratio, (b) the
transient waveform of the modulated signal after the proposed
modulator. . . . . . . . . . . . . . . . . . . . . . . . . . . . 318
14.13 (a) The insertion loss (isolation) at on (off) state of the pro-
posed modulator and the resulting extinction ratio, (b) the
transient waveform of the modulated signal after the proposed
modulator. . . . . . . . . . . . . . . . . . . . . . . . . . . . 319
14.14 (a) The insertion loss (isolation) at on (off) state of the pro-
posed modulator and the resulting extinction ratio, (b) the
transient waveform of the modulated signal after the proposed
modulator. . . . . . . . . . . . . . . . . . . . . . . . . . . . 320
14.15 The eye diagrams of 25 Gb/ s data rate communication for two
I/O transce ivers. . . . . . . . . . . . . . . . . . . . . . . . . 321
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