294 Design of CMOS Millimeter-Wave and Terahertz Integrated Circuits
Table 13.1: Comparison with Previous Works
[158] [282] [29] Proposed
work
Technology 65nm LP 65nm 40nm 40nm
Freq uency range
(GHz)
116 260 135 280
Data Rate(Gbps) 10 10 10 > 20
Modu lation BPSK
/QPSK
/8QAM
ASK ASK BPQK
/SPSK
Phase-arrayed
MIMO
No No No Yes
DC Power (mW ) 200 688 98 <300
Transmitter Out-
put power (dBm)
-5 5 (EIPR) -9.7∼-8.1 > -9
System integra-
tion
Only Trans-
mitter
Only Trans-
mitter
Transceiver
with em-
bedded
OSC
Transceiver
with embed-
ded antenna
and OSC
LO generation. Bes ide s, the antenna is not integrated with the transmitter.
Thus this approach c onstrains the degree of integration. For work in [29], a
more advanced 40nm CMOS process is utilized. However, the signal gener ator
approach is not efficient for high-power THz signal generation. Besides, the
antenna is not integrated with the transceiver and thus has a limitation de-
gree of integration. For work in [2 82], a transceiver with on-chip approach is
proposed. However, this approach does not contain a beam-forming operation
thus limiting the r ange of communication.
The highlight of our approach, compared to the previous works, is in the
following aspects. The proposed new circuit design technique is based on a
metamaterial device. Metamaterial-based zer o-phase-shift T-line and coupler
will be invented for a high-power THz signal generator and on-chip leaky
wave antenna array design, which can be deployed for compact MIMO design.
Furthermore, the dual-mode massive T Hz MIMO is proposed to enhanc e the
range and capacity of near-field THz big data rate transmission with the
beam-forming control.
13.3 Conclusion
A concept of massive THz MIMO for ultra-high-speed and high-capa city wire-
less communication is introduced in this chapter. In order to fulfill the demand
of the next-generation hig h-volume wireless data transmiss ion application,
communication system working at the THz range with high spectrum resource