288 Design of CMOS Millimeter-Wave and Terahertz Integrated Circuits
12.5 Conclusion
CMOS-based imaging systems are demonstrated in this chapter. The pro-
posed 135-GHz SRX is integrated in a sub-THz imaging system with various
demonstrated imaging diagnosis applications. It has great potential to be uti-
lized for the future large-arrayed trans mis sion-type THz imaging system. In
addition, a wide -band THz imag e system based on direct-conversion receiver is
demonstrated in the CMOS process with wide detection frequency range. The
proposed THz ima ge sy stem is able to capture images in 239 281 GHz with
a resolution bandwidth of 100MHz, which has many a pplications in the de-
tection of tissue with species-specific spectral absorption. An integrated THz
CMOS transceiver is demonstrated for a 280GHz reflection imaging system
with high power transmitter, high sensitivity receiver and high-gain o n-chip
in simulation. The 2D on-chip high-gain LWA array is designed by c onnecting
two 1D LWAs in parallel with 2 × 13 unit-cells, and it is simulated with a
broadside radiation pattern with 9.1-dBi directivity and 41% radiation effi-
ciency at 280 GHz. The differential down-conversion receiver is designed by
integrating a differential sing le-gate mixer with one modified Cher ry–Hooper
amplifier-based variable-gain amplifier with compact size, and it is simulated
with a conversion gain of 46.6 dB, and an NF of 24.6 dB at 280GHz. The en-
tire transceiver has a compact size of 1 mm
2
, and consumes 2 98.6 mW powe r
operating under 1.2V power supply. The transmitter is simulated with an
equivalent isotro pic ally radiated power (EIRP) of 6.3 dBm, an EIRP density
of 4.27 mW/mm
2
; the receiver is simulated with a maximum gain of 51dB
and a sensitivity of -57.6 dBm.
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