258 Design of CMOS Millimeter-Wave and Terahertz Integrated Circuits
-90 -80 -70 -60 -50 -40 -30 -20 -10 0 10
0
20
40
60
80
100
120
140
Output voltage
Output voltage (mV)
Input power (dBm)
Maximum output
voltage 138mV
Sensitivity -84dBm
Figure 11.7: Measured sensitivity of −84 dBm and the maximum
output voltage of 138 mV.
Table 11.1: Performance Comparison with Recent mm-Wave Re-
ceivers
[91] [92] [ 89] [90] [93] This
work
Technology 65-nm
CMOS
65-nm
BiCMOS
65-nm
CMOS
65-nm
CMOS
65-nm
CMOS
65-nm
CMOS
Supply (V) 1.2 1 1.2 1 1.2 1
Frequency (GHz) 94 94 144 183 95.5 131.5
Sensitivity (dBm) -66 -57 -74 -72.5 -78 -84
Noise Figure( dB) N/A 12 10.2 9.9 8.5 7.26
Bandwidth(GHz) 23 26 0.94 1.4 0.56 0.68
NEP (fW/Hz
0.5
) N/A 10.4 1.3 1.51 0.67 0.615
Power (mW) 93 200 2.5 13.5 2.8 8.1
Core Area (mm
2
) 0.31 1.25 0.021 0.013 0.014 0.06
[89, 90, 91, 92, 93]. The proposed receiver achieves better se nsitivity, noise fig-
ure and NEP.
11.4 Conclusion
A CMOS super -regenerative receiver is demonstrated based on ZPS-coupled
oscillator s for 131 GHz. Compared to traditional SRX designs, the receiver
shows an improved sensitivity by 10 dBm due to the additional po sitive feed-
back loop introduced between the two in-phase-coupled oscillators. The chip is
implemented in 65nm CMOS with 0.06-mm
2
area. Measurement results show
that the receiver has a chieved -84-dBm sensitivity, 0.615-fW/Hz0
.5
NEP, 7.26-
dB NF and 8.1-mW power consumption. The compact s ize with improved
sensitivity is ideal for the application of large-arrayed mm-wave imaging ap-
plications.
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