B.7. Collector-Emitter Voltage and Collector Current in the Saturation Region

An equation for VCEsat (VCE in the saturation region) can be obtained using the equations for IB, (B.27) (with leakage components neglected), and IC, (B.23), to eliminate VBE. The approximate equation for IB is again


The equation for IC, (B.23), which neglects the VAF term (well justified at low voltage of the saturation region), and the –1 is

Equation B.33


Eliminating VBE between the approximate form of (B.27) and (B.33) gives

Equation B.34


where

Equation B.35


The subscript comes from “beta forced,” the conventional way to define IC/IB in the saturation region. Note that by definition, βforced < βF, as IC < ICact defines the saturation region.

For example, we compute VCEsat at ICsat = IC/2. Assume that βF = 100 and βR = 1 such that βforced = βF/2 = 50. For this case, VCEsat = 120 mV. Note that this is the midrange for the validity of (B.30).

It should be noted that VCEsat is not defined for βforced → βF. This is because of the neglect of the –1 from the equations. Technically, the maximum VCEsat is VCEsat ≈ VBE, as this is the maximum VCE at which the base – collector junction is forward biased, the condition for the onset of the saturation region. At VCE values very near VBE, the –1 terms in the current equations are not mathematically negligible. On practical grounds, though, (B.34) is valid for when the output characteristic is clearly in the saturation region.

A value for βR can be obtained, using (B.34), from one set of data points, ICsat and VCEsat from a measurement, with βF known. If this proved to vary with the ICsat chosen for the calculation, it would suggest that the discussion at the end of Unit B.5 applies. That is, the leakage current is not negligible and the effective βR, βRleak, is a variable throughout the saturation region.

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