4.5. Output Conductance Parameter

The output conductance accounts for the finite slope of the output characteristic, an example of which is shown in Fig. 4.5. The plot for the SPICE formulation [(3.8)] of the active region is also shown (applicable to the device for VDS > Veffn). Both plots are for VGS = constant (i.e., Vgs = 0 and gmVgs = 0).

Figure 4.5. Output characteristics illustrating nonzero active-region slope. Also shown is the SPICE formulation for the active region. For the plots, λn = 1/10 V. A possible bias point with ID and VDS is included.


In the ideal case, for any vDS in the active region, the current is the same for a given VGS, and the drain current is simply Id = gmVgs. The real case, though, obviously possesses a current dependence on vDS. The linear model treats gm as a constant (calculated at the bias values) and includes the effect of the nonzero slope with the output conductance, gds, such that Id = gmVgs + gdsVds (without or neglecting the body effect). The circuit shown in Fig. 4.6 includes the gds component.

Figure 4.6. Signal circuit that includes addition of the output conductance. The equivalent resistance has magnitude 1/gds.


An expression for the output conductance is obtained from the definition

Equation 4.12


Again using (3.8), the result is

Equation 4.13


where Veffn = VGS – Vtno is constant and where ID is the dc (bias) current. The last term (on the right-hand side) is the form that is generally used in practice for an initial design, as it does not require a value for VDS. Note that gds is not a conductance in the physical sense but has the correct dimensions and behaves in the circuit like a conductance.

We will now obtain the circuit transconductance for the case where the effect of gds is included. Upon application of an input signal, Vg, a signal drain current, Id, will flow in the output circuit. This causes a signal voltage to appear across RS and RD, which is equal to the voltage to Vds. That is,

Equation 4.14


The associated current through the output resistance is thus

Equation 4.15


The effect is to reduce the current through RS and RD and thus reduce the circuit transconductance of the common-source amplifier stage. The output current with the current of (4.15) subtracted from the basic gmVgs is

Equation 4.16


which is, when solved for Vgs,

Equation 4.17


Again using (4.6), which is Vg = Vgs + IdRS, the new circuit transconductance is

Equation 4.18


With a 1 - V drop across RS and a 5 - V drop across RD, and with λn = 1/50 V, the new Gm is gm/5.12, compared with gm/5 when neglecting gds [(4.8)].

In general, the complete circuit includes, in addition, the body-effect transconductance current source of Figs. 4.3 and 4.4. The omission of this current source in Fig. 4.6 implies that Vsb = 0 because the source and body are connected. This connection is possible to implement in special cases such as in some of our MOSFET lab projects where only one transistor on the chip is used or for the case of a differential stage where the source of two transistors is at the same node. It is also possible to eliminate the body-effect current source by bypassing the source resistor with a bypass capacitor. The capacitor places the source at signal ground. However, in this case, the dc threshold voltage is still affected by VSB = IDRS.

In Unit 8, the circuit transconductance equivalent to (4.8) and (4.18), but which includes the body effect [(8.49)], is given as


where η is defined in (4.11). For gds = 0 and η = 0, (4.19) reduces to (4.8). Note that including the body effect will in general have more effect on Gm than including gds, as η can be on the order of 0.2. In all cases where we can calculate the circuit transconductance, Gm, the magnitude of the voltage gain is obtainable from –GmRD (common-source stage) and GmRS(source-follower stage).

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