A
AAO, see Anodically oxidized alumina (AAO)
Ab initio methods, 872
Absolute humidity, 114
AC, see Alternating current (AC)
Acetonitrile (ACN), 448
ACMOMDs, see Antenna-coupled MOM diodes (ACMOMDs)
ACN, see Acetonitrile (ACN)
ACs, see Activated carbons (ACs)
Action potential, 197
Activated carbons (ACs), 446
Activation, 168
duration and resistance, 170–171, 172
integration of SETs using, 173
procedure for series-connected, 168–169
Active-matrix liquid crystal displays (AMLCD), 730
ACT Node of the Australian National Fabrication Facility (ANFF), 612
Adaptive average cell (AD–AVG), 591; see also Adaptive fault-tolerant architecture
crossbar layout view, 598
technology implementation, 597
2-input AD–AVG yield, 599
Adaptive fault-tolerant architecture, 591, 599–600
adaptive averaging cell, 594–596
AD–AVG technology implementation, 597–599
balanced vs. unbalanced AVG, 596–597
MAJ-based voting technique, 592
output error probability vs. output SD, 593
AD–AVG, see Adaptive average cell (AD–AVG)
ADC, see Analog-to-digital converter (ADC)
AFC magnets, see Antiferromagnetically coupled magnets (AFC magnets)
AFM, see Atomic force microscopy (AFM)
After Tube Removal (ATR), 543
Agglomerated single-layer graphene (ASLG), 104
Air substrate, see Ideal substrate
ALD, see Atomic-layer-deposition (ALD)
ALD technique, 85
All-spin logic (ASL), 809
circuit energy vs. overdrive, 822
SITE for, 820
All-spin logic circuit, 811, 823–824; see also CMOS circuit; Graphene nanoribbons (GNRs); Interconnects
delay vs. interconnect length, 821
diffusion coefficient in GNRs, 815–819
electrical current flow, 811
energy dissipation of, 812
energy dissipation vs. interconnect length, 823
energy vs. overdrive, 822
interconnect dynamics, 814–815
nanomagnets in, 809
net delay of, 811
prototype, 811
spin injection and transport efficiency, 820–821
spin-relaxation length in graphene, 819–820
switching schemes, 814
α-Si, see Amorphous-Si (α-Si)
Alternating current (AC), 374
Ambipolar transistors, 328, 330
ambipolar conduction, 330
current-voltage relationship, 331
model of, 331
3-Aminopropyltriethoxysilane (APTES), 505, 511, 526
AMLCD, see Active-matrix liquid crystal displays (AMLCD)
Amorphous-Si (α-Si), 728
field-effect electron mobility of, 685
Analog-to-digital converter (ADC), 440
Analysis in frequency domain, 288
Analytical models, 17
mobility fluctuation-based, 18–19
number fluctuation-based, 17–18
percolation-based, 18
ANB-NOS, see N-5-Azido-2-nitrobenzoyloxysuccinimide (ANB-NOS)
ANC, see Artificial nucleation center (ANC)
ANFF, see ACT Node of the Australian National Fabrication Facility (ANFF)
Anisotropic electron–hole exchange interaction, 835
Anisotropic exchange interaction, 846
ANL, see Argonne National Laboratory (ANL)
Anodically oxidized alumina (AAO), 642
electrodeposition of Ag NWs, 643
pore geometries, 642
Anodizable metals, 91
Anodization, 81
Antenna-coupled MOM diodes (ACMOMDs), 134
Antiferromagnetically coupled magnets (AFC magnets), 766
Antiparallel (AP), 849
to parallel switching, 850, 851, 854; see also Spin-transfer torque random access memory (STT-RAM)
AP, see Antiparallel (AP)
Aprotic solvents, 448
APTES, see 3-Aminopropyltriethoxysilane (APTES)
AR, see Aspect ratio (AR)
Argonne National Laboratory (ANL), 628
Arizona State University (ASU), 17
Artificial nucleation center (ANC), 780
ASL, see All-spin logic (ASL)
ASLG, see Agglomerated single-layer graphene (ASLG)
Aspect ratio (AR), 641
ASU, see Arizona State University (ASU)
ATK, see Atomistix ToolKit® (ATK)
Atomic force microscopy (AFM), 63
Atomic scale defects, 867
Atomic-layer-deposition (ALD), 393
Atomic-scale device structures, 870; see also Atomic-scale modeling of nanoscale devices
electronic structure methods, 872
methodology, 870
system geometry, 870
transmission pathway at Fermi level, 871
transmission spectrum, 871
Atomic-scale modeling of nanoscale devices, 867; see also Atomic-scale device structures
atomistic effects, 868
conductance, 869
effective mass theory, 869
electrical currents on nanoscale, 869–870
electronic structure methods, 872
expression for current, 869
outlook, 876
quantum-mechanical device modeling, 871–876
scattering effect sources, 867
Atomistix ToolKit® (ATK), 874
ATR, see After Tube Removal (ATR)
Autarkic power plants, 133
Averaging cell (AVG), 591
architecture, 592
AVG, see Averaging cell (AVG)
Axon-inspired communication, 204; see also Brain; Interconnects; Single-electron transistor (SET)
biological nano-array, 198
broadcast coverage area, 197, 198
broadcast degradation, 200
communication array, 202
forwarding voltage-gated ion channels, 201
maximized broadcast coverage area, 199
to mimick action potential, 203
neurotransmitters, 194
optimum coverage area, 199, 200, 201
power and energy estimation, 204–206
synaptic clefts, 194; see also Interconnects
transistor delay reduction, 194
voltage-gated ion channel, 197
N-5-Azido-2-nitrobenzoyloxysuccinimide (ANB-NOS), 657
B
Back-end-of-line (BEOL), 43
processes, 641
Ballistic deflection transistor (BDT), 143, 145; see also Ballistic transistor logic; General-purpose gate (GPG)
alternative connection methods, 160
ballistic transport, 145
cascading logic challenge, 147
circuit design methodology, 154–157
circuit design with, 153
current gain, 146
current paths in, 148
drain potential, 150
empirical model of, 147
fabrication, 146
future circuit improvements, 161
integration of BDT cores and conventional Si CMOS, 159
inverting BDT, 148
multicell circuit functionality, 156–157
operating frequency, 148
output response of, 147
resistor variations on output voltage, 160
schematic of, 146
SEM image of, 146
variations, 159
voltage-mode operation of, 160
XOR/XNOR logic cell, 156
Ballistic electronic transport, 447
Ballistic transistor logic, 143; see also Ballistic deflection transistor (BDT)
band-to-band tunneling, 144
conventional devices and circuits, 144
heterojunction bipolar transistor, 144
nonconventional devices and circuits, 144–145
one electron at a time transport, 144
SoI technology, 144
Ballistic transport, 145
Band gap equations, 485–486; see also Energy band gap
Band-to-band tunneling, 144
Barium titanate (BT), 80
Barium–strontium titanates (BST), 81
Batteries, 445; see also Lithium-ion batteries (Li-ion batteries)
progress, 627
BD, see Black diamond (BD)
BDT, see Ballistic deflection transistor (BDT)
Before Tube Removal (BTR), 543
BEOL, see Back-end-of-line (BEOL)
Bias-temperature stress (BTS), 45
Biexcitons, 835
BIST approach, see Built-in self-test approach (BIST approach)
BL’, see Inverse bit line (BL’)
Black diamond (BD), 44
Block under tests (BUTs), 570, 571
Blood oxygen level-dependent MRI (BOLD MRI), 194
BLs, see Bitlines (BLs)
Blue Brain Project, 194
BOLD MRI, see Blood oxygen level-dependent MRI (BOLD MRI)
Bond order potentials, 874
Bottom oxide (BOX), 728
Bottom-up self-assembly, 42
BOX, see Bottom oxide (BOX)
Brain, 194, see Interconnects; Neurons
Blue Brain Project, 194
cortical column, 195
energy consumption, 194
information transfer, 194
neurotransmitters, 194
synaptic clefts, 194
synaptic connections193
Brillouin zone (BZ), 702
BST, see Barium–strontium titanates (BST)
BT, see Barium titanate (BT)
BTR, see Before Tube Removal (BTR)
BTS, see Bias-temperature stress (BTS)
Buckling mechanism of thermal memory, 356–358
Built-in self-test approach (BIST approach), 571, 572
Bulk-limited conduction, 123
BZ, see Brillouin zone (BZ)
C
C, see Capacitors (C); Comparators (C)
CAD, see Computer-aided design (CAD)
CAEN, see Chemically assembled electronic nanotechnology (CAEN)
C-AFM, see Conductive atomic force microscope (C-AFM)
Capacitance
of tunnel junction, 181
Capacitive sensors, 111
Capacitive trans-impedance amplifier (CTIA), 439
aluminum electrolytic capacitors, 80
barium titanate, 80
capacitor technology limitation, 79, 80
gravimetric energy density, 446
gravimetric specific capacitance, 449
Leyden jar, 79
MLCC, 80
planar capacitors, 81
potential vs. time curve, 450
stability, 453
target capacitance enhancement, 80
technology classification, 81
Trench capacitors, 80
Volumetric densities of capacitor technologies, 80
Carbon
based active electrode material oxidation, 450–451
based material graphene, 815
containing precursor gas, 447–448
Carbon nanofibers (CNF), 406
Carbon nanostructures, 93, 106; see also Graphene; Multiwalled carbon nanotubes (MWCNTs)
applications, 93
cyclic voltammetry, 93
energy storage mechanism, 94
field emission, 94
graphene, 93
in layered transition metal oxides, 93
MoO3–MWCNT nanocomposites intercalation, 98
opened-tip nanotubes, 97
surface area enhancement, 93
Carbon nanotube field-effect transistors (CNTFETs), 485, 493; see also CNTFET SRAM design
based cells, 548
challenges, 537
cross section of, 536
current of, 490
current–voltage characteristics, 492
single-walled, 535
Carbon nanotubes (CNTs), 93, 547; see also CNTFET SRAM design; Electrical control of CNT synthesis condition; Spray deposition of CNT; Vertically aligned carbon nanotubes (VACNTs); Yield improvement technique analysis
applications, 535
based IR sensors, 437
based single pixel IR imaging system, 442
challenges, 531
commercial, 525
detector signal monitoring, 438
diameter variations, 551
dielectrophoresis, 472
1D nature, 424
electronic structures, 509
gas sensors, 467
grown in opposite direction, 478
ink preparation, 510
as integrated capacitors, 536
integration in microsystems, 472, 473, 480
m-CNTs, 509
mean free path, 535
misalignment of, 537
on-chip microelectronics and, 471
photovoltaic effect, 438
potential areas for, 423
Ragone plot, 453
random network channel, 514
randomly generated 3D CNT network, 530
resistance of, 529
semiconducting CNTs, 538
solubility in organic solvents, 526
specific surface area, 446
SWeNT, 525
synthesis, 471
synthesis techniques, 552
as vertical interconnects, 423
Carboxymethyl cellulose (CMC), 458
Carrier conduction processes, 122
CBD, see Chemical bath deposition (CBD)
CBM, see Conduction-band minimum (CBM)
C2C, see Chip-to-chip (C2C)
CE, see Counterelectrode (CE)
Cellular automata architectures, 792
Center for Nanoscale Materials (CNM), 628
Central conducting island, 181
Central processing unit (CPU), 751
Ceramic capacitor, 79
CFC, see Complementary ferroelectriccapacitor (CFC)
CFS, see Controlled Full Subtractor (CFS)
Channel mobility, 19
Channel resistance method (CRM), 738
Charge accumulation investigation in dielectric stacks, 119, 128; see also Charge injection; Fowler–Nordheim tunneling (FN tunneling)
bulk-limited conduction, 123
C–V measurements, 120–121, 122
carrier conduction processes, 122
charge accumulation at high bias voltage, 125
Poole–Frenkel conduction, 123
positive stress voltage, 124
sample preparation, 120
WBK approximation, 123
Charge conduction, 181
domination, 126
Chemical bath deposition (CBD), 665, 667
Chemical mechanical polishing (CMP), 401
Chemical vapor deposition (CVD), 81
process, 457
Chemically assembled electronic nanotechnology (CAEN), 570; see also Self-test for nanofabric systems
Chip-to-chip (C2C), 647
Chip-to-wafer (C2W), 647
Circuit design methodology, 154–157
CL, see Clock locality (CL)
CLB, see Configurable logic block (CLB)
Clock locality (CL), 808
Clocking field, 765
of symmetric nanomagnet, 766
CLRCL, see Complementary and Level Restoring Carry Logic (CLRCL)
Cl2 sensor, 617; see also Doped SnO2 NWs synthesis
CMC, see Carboxymethyl cellulose (CMC)
CMOL, see CMOS/nanowire/molecular (CMOL)
CMOS (Complementary metal–oxide–semiconductor), 3; see also Nano-CMOS; N-channel metal oxide semiconductor (NMOS); Single-electron transistor (SET); Tunneling phase logic (TPL); Quantum-dot cellular automata (QCA)
atomic-scale limitations, 143
challenges, 570
classical transistors, 69
CMOS circuit, 809
cortical neurons and, 193
Cu resistivity enhancement, 808
dimensional scaling, 807
electron charge, 807
gates, 4
interconnect capacitance, 808
scaling, 267
SDD vs. ITRS technology year, 809
size, 255
top-down scaling, 41
CMOS circuit, 809, 810, 823–824; see also All-spin logic (ASL); Interconnects
CMOS load, 809
delay evaluation, 810
delay vs. interconnect length, 821
energy dissipation of, 810, 811, 823
net delay of, 810
CMOS scaling, 67, 547; see also Reduced graphene oxide FETs (RGO FETs); Self-assembled monolayers (SAMs); Work function tuning
bottom-up self-assembly, 41
challenges, 67
optimal-sized FAs, 73
porphyrins, 43
reverse sizing scheme, 70
top-down vs. bottom-up self-assembly
CMOS/nanowire/molecular (CMOL), 299
CMP, see Chemical mechanical polishing (CMP)
CNF, see Carbon nanofibers (CNF)
CNM, see Center for Nanoscale Materials (CNM)
CNT, see Carbon nanotube (CNT)
CNTFET SRAM design, 547, 561, 564; see also Carbon nanotube (CNT)
CNT diameter variations, 551
CNTFET SRAM cell performance, 549–551
CNTFET SRAM cell with metallic CNTs, 552–558
delay and static power comparison, 556
eight-transistor SRAM cell, 549
functional memory probability, 560
memory cell probability, 553
memory with spare columns, 560
performance optimization, 558
process parameters, 561
read and write delays, 557
read and write energy comparison, 556
read delay distribution density, 559
short transistor, 558
SNM distribution density, 559
SRAM Cell performance, 557
technology scaling, 561
transistor with series–parallel CNTFETs, 552
write delay distribution density, 559
write failure, 558
CNTFETs, see Carbon nanotube field-effect transistors (CNTFETs)
Coating techniques, 526
Cobalt phthalocyanine (CoPc), 112
Coffee stain, 514
CoMoCAT process, 525
Comparative analysis of mobility and dopant number fluctuation models
analytical models, 17
mobility fluctuation-based model, 18–19
mobility fluctuation vs. trap position, 23
mobility values, 22
number fluctuation-based model, 17
percolation-based model, 18
threshold voltage distribution, 24
threshold voltage fluctuation, 20
threshold voltage fluctuation error bar plot, 25
threshold voltage fluctuation values, 24
threshold voltage fluctuation vs. trap position, 21, 22
threshold voltage values, 23
threshold voltage vs. random dopant configuration, 19
Comparators (C), 570
Complementary and Level Restoring Carry Logic (CLRCL), 68
Complementary ferroelectriccapacitor (CFC), 761
Complementary resistive switch (CRS), 316; see also Linear memristive model; Non-linear memristive model
basic simulation models, 317
memristive models, 317
parasitic current paths, 316
states, 317
Compute magnet, 767
Computer architecture, 591
Computer-aided design (CAD), 4
Conductance, 869
Conducting polymers, 454
Conduction-band minimum (CBM), 702
Conductive atomic force microscope (C-AFM), 139
current densities, 140
Configurable logic block (CLB), 571
Co/Ni multilayers, 789
Constant-type primitive (C type primitive), 270
Continues wave (CW), 839
Controlled Full Subtractor (CFS), 248
CoPc, see Cobalt phthalocyanine (CoPc)
Copper diffusion barriers, 44
Copper silicide (Cu-Si), 628
Core–shell (CS), 609
Core–shell NW (CS-NW), 610
Corrected Coulomb approach, 17; see also Fast multipole method; Particle–particle–particle–mesh coupling method
Coulomb blockade, 181, 186, 187
change in, 189
Counterelectrode (CE), 644
Coupling field, 781, 783; see also Nanomagnet
enhancement, 784
simulation results for, 784, 785
CPU, see Central processing unit (CPU)
Critical buckling load, 357
CRM, see Channel resistance method (CRM)
Crossbar array architectures, 299
Crossbar memory array, 313
vs. flash-based memory arrays, 313
oxide-based resistive switching devices, 313
sensing margin, 313
size, 312
Crossbar memory array reading operations; see also Crossbar memory array writing operation
circuits for different reading voltage, 302
crossbar array equation, 305
crossbar arrayreading operation, 300–301
crossbar array solution, 304
current direction, 307
disturbance and power efficiency, 303–304
half-selected devices, 301
nonlinearity ratio, 307
of nonlinear I–V characteristics, 307
effect of nonlinear memory characteristics, 307
reading operation power efficiency, 306
readout voltage distribution, 306–307
readout voltage distribution comparison, 310
sensing margin, 302–303, 304, 308
sneak paths, 308
voltage configurations for, 301–302
worst-scenario sensing margin, 308–310
Crossbar memory array writing operation, 309, 312; see also Crossbar memory array reading operations
current delivery, 312
flash memory arrays, 311
leakage reduction, 312,
line resistance, 311
maximum disturbance voltage, 311
parasitic leakage paths, 309
resistive switching devices, 310
select devices, 310
voltage distribution, 311
CRS, see Complementary resistive switch (CRS)
CS, see Core–shell (CS)
CS-NW, see Core–shell NW (CS-NW)
CTIA, see Capacitive trans-impedance amplifier (CTIA)
C type IV converter, 439
C type primitive, see Constant-type primitive (C type primitive)
Current-to-voltage converter, 438
C type IV converter, 439
R type IV converter, 438
Current–voltage (I–V), 513
Cu silicide nanowires, 627, 637–638
high-resolution analysis, 633–634
indexed Si[110] zone pattern, 634
as Li-ion anode materials, 636–637
before and after lithiation process, 638
low-angle grain boundary, 633
oblique angle codeposition, 629
self-assembled nanowire, 629–633
on Si substrate, 632
synthesis methods for, 628
XRD patterns of deposited, 637
Cu-Si, see Copper silicide (Cu-Si)
CV, see Cyclic voltammetry (CV)
CVD, see Chemical vapor deposition (CVD)
CW, see Continues wave (CW)
C2W, see Chip-to-wafer (C2W)
Cyclic voltammetry (CV), 93, 448, 644
D
DARPA, see Defense Advanced Research Project Agency (DARPA)
DC, see Direct current (DC)
DD, see Drift-diffusion (DD)
Defect tolerance, 570
Defense Advanced Research Project Agency (DARPA), 406
Defense Microelectronics Activity (DMEA), 406
Deionized (DI), 366
water, 666
Delta-sigma modulation, 439
Dense plasma focus (DPF), 61
Densities of states (DoS), 418
calculating, 486
for conduction-band minimum, 702
Density functional theory (DFT), 48, 870
advantage, 873
band gap of semiconductors, 872
LDA in, 702
Density-gradient ultracentrifugation method (DGU method), 525
Deoxyribonucleic acid (DNA), 287
Department of Homeland Security (DHS), 656
Describing function (DF), 287
analysis in frequency domain, 288
DNA or CNT nanodevices, 291
limit cycle frequency, 288
linear system transfer function, 288
nonlinear static v–i characteristic, 289–290
Device miniaturization, 835
Device parameters, 528
DEZn, see Diethylzinc (DEZn)
DF, see Describing function (DF)
DFT, see Density functional theory (DFT)
DGU method, see Density-gradient ultracentrifugation method (DGU method)
DHS, see Department of Homeland Security (DHS)
DI, see Deionized (DI)
Diamond-like carbon (DLC), 400
DIBL, see Drain induce barrier lowering (DIBL)
Dictator majority gate, 229
constant, 448
films, 83
permittivity, 80
Dielectrophoresis deposition of graphene, 375–376, 381; see also Graphene
Diethylzinc (DEZn), 667
Diffusion tensor MRI (DT-MRI), 194
Digital circuits,nanofabric-based, 571
Digital media object detection, 793
Digital signal processing module (DSP module), 438
Dimensional scaling
Cu resistivity and, 808
limitation, 807
Dimethyl formamide (DMF), 448
Dimethyl octadecylchlorosilane (DMODCS), 43
Diode
contact resistance, 313
resistor logic, 571
Direct bandgap 1D nanostructures, 485
Direct current (DC), 510
Direct diagonalization techniques, 494
Discrete atomic system, 875
Disordered graphene, 103; see also Graphene
current density against electric field, 105
parameters from field emission, 106
Raman spectra of, 104
DIUS, see UK Department for Innovations, Universities and Skills (DIUS)
DLC, see Diamond-like carbon (DLC)
DMEA, see Defense Microelectronics Activity (DMEA)
DMF, see Dimethyl formamide (DMF)
DMODCS, see Dimethyl octadecylchlorosilane (DMODCS)
DNA, see Deoxyribonucleic acid (DNA)
DOE, see U.S. Department of Energy (DOE)
Domain wall (DW), 779
Doped SnO2 NWs synthesis, 615, 625
bulk-scale synthesis, 619
Cl2 sensor fabrication and characterization, 617
depletion regions in NPs and NWs, 624
dynamic sensor testing system, 618
experimental procedure, 616
homo-junction diode sensors, 616
I–V curves, 621
material characterizations, 616
materials, 616
n- and p-type NWs, 616
optical absorption spectra, 623
p-doped, 622
PL spectra, 620
response concentration curve, 624
sensor application of n-doped NWs, 625
surface plasmon resonance frequency, 622
DoS, see Densities of states (DoS)
Double-junction, 182
DP spin-relaxation mechanism, see D’yakonov–Perel’ spin-relaxation mechanism (DP spin-relaxation mechanism)
DPF, see Dense plasma focus (DPF)
Drain induce barrier lowering (DIBL), 728
coefficient, 71
effect, 19
Drain potential, 150
DRAM, see Dynamic random-access memory (DRAM)
Drift-diffusion (DD), 725
transport, 145
Driver magnets, 767
Dry etching, 85
DSP module, see Digital signal processing module (DSP module)
DSSCs, see Dye-sensitized solar cells (DSSCs)
DT-MRI, see Diffusion tensor MRI (DT-MRI)
DW, see Domain wall (DW)
D’yakonov–Perel’ spin-relaxation mechanism (DP spin-relaxation mechanism), 819
Dye-sensitized solar cells (DSSCs), 655
Dynamic random-access memory (DRAM), 85, 751
E
EA, see Easy axis (EA)
Easy axis (EA), 812
E-beam
deposited Ag NPs, 675
growing method, 679
lithography, 135
EBL, see Electron-beam lithography (EBL)
ECM, see Electrochemical metallization (ECM)
Edge-scattering MFP, 817
EDL, see Electrochemical double layer (EDL)
EDLCs, see Electrochemical double-layer capacitors (EDLCs)
EDS, see Energy-dispersive x-ray spectroscopy (EDS or EDX)
EDX, see Energy-dispersive x-ray spectroscopy (EDS or EDX)
EELS, see Electron energy loss spectroscopy (EELS)
Effective cross-points, 582
Effective oxide thickness (EOT), 28
EHT, see Extended Hückel theory (EHT)
8T, see Eight-transistor (8T)
Eight-transistor (8T), 549
memory cell, 549
memory cell probability, 553
read and write delays, 557
write delay distribution density, 551
8T SRAM cell, see Eight-transistor (8T)—memory cell
EIS, see Electrochemical impedance spectroscopy (EIS)
Electrical control of CNT synthesis condition, 471, 481; see also Carbon nanotubes (CNTs)
bridge resistance vs. temperature, 476, 477
calculation and simulation, 474–476
CNT diameter measurement, 479
CNT–microsystem integration, 473
electric field simulation, 478
experimental characterization, 476–477
I–V curve, 479
industrial implementation, 480–481
locally synthesized CNT, 478
polysilicon microbridge temperature distribution, 475
polysilicon microstructures and electrical arrangement, 474
silicon resistivity vs. temperature, 475
synthesized CNT diameter distribution, 479
Electrical currents on nanoscale, 869–870
Electrical energy storage, 445; see also Electrochemical double-layer capacitors (EDLCs)
Electrical field strengths for hole and electron tunneling, 125
Electrical quantum-dot cellular automata (EQCA), 226, see Quantum-dot cellular automata (QCA)
gates and bistable feature of, 227
Electric field-controlled spin interactions, 835, 846
barrier-dependent polarization-resolved spectra, 845
degree of polarization, 839, 844, 845
direct and indirect excitons, 840
electric field-tunable exchange interaction, 839–842
electron–hole exchange interaction, 837–838
exciton fine structure, 837–838
fundamentals, 836
luminescence polarization, 837
polarization signatures, 842
polarization-dependent PL spectra, 840, 841
polarization-resolved photoluminescence, 838–839
polarization-resolved PL measurements, 840
positive trion spin fine structure, 844
singly charged trion state identification, 844
spin effects of charged exciton states, 842–846
Electric-field-induced layer formation method (ELF method), 510
s-CNT purification, 511
Electrochemical capacitors (EC) construction, 447
Electrochemical double layer (EDL), 642
Electrochemical double-layer capacitors (EDLCs), 446; see also Vertically aligned carbon nanotubes (VACNTs)
ACs-based, 446
in charged and discharged states, 446
EDLC−battery hybrid systems, 454
gravimetric energy density, 448
gravimetric specific capacitance, 449
gravimetric-specific double-layer capacitance, 446
stability, 453
Electrochemical impedance spectroscopy (EIS), 644
Electrochemical metallization (ECM), 317, 318
memristive model of, 321
Electromagnetic effect, 673
Electromagnetic fields (EM fields), 494
Electromechanical modeling, 216, 219–220; see also Stress sensor modeling
average distance among GNPs in matrix, 216–217, 219
effective electrical conductivity, 216, 217
relative deformations, 218
Electromigration method, 167
Electron
density, 499
hole exchange interaction, 837
tunneling, 182
Electron energy loss spectroscopy (EELS), 451
Electron-beam lithography (EBL), 168, 402
Electronic structure methods, 872; see also Atomic-scale modeling of nanoscale devices
ab initio methods, 872
DFTB, 873
EHT, 873
germanium band structure, 873
Hubbard model, 873
semiempirical models, 873
Slater–Koster tight-binding models, 873
Electrostatic short-range Coulomb forces, 15
ELF method, see Electric-field-induced layer formation method (ELF method)
Elliott–Yafet spin-relaxation mechanism (EY spin-relaxation mechanism), 819
EM fields, see Electromagnetic fields (EM fields)
EMC, see Ensemble Monte Carlo (EMC)
EMIM-Tf2N, see 3-Methylimidazoliumbis(trifluoromethy lsulfonyl) imide (EMIM-Tf2N)
Energy
minimization co-processor, 793
Energy-band control study, 701, 709–710; see also [110]-SiNWs
cross-sectional shape effects, 703–704
cutoff energy, 702
origins of dependence on cross-sectional shapes, 706–707
radius of rough wire, 702
random fluctuation distribution, 702–703
sidewall roughness effects, 707–709
with defect and temperature, 486–487
with diameter, 486
at different diameters and temperatures, 490
equation implementation, 486
methodology, 486
results, 488
Schrödinger equation, 486
temperature dependent band-gap behavior, 489
Energy-dispersive x-ray spectroscopy (EDS or EDX), 451, 674
Ensemble Monte Carlo (EMC), 18, 713
EOT, see Effective oxide thickness (EOT)
EQCA, see Electrical quantum-dot cellular automata (EQCA)
Equivalent series resistance (ESR), 448
ESR, see Equivalent series resistance (ESR)
Etched-foil Nanocapacitors, 81; see also Particulate capacitors
ALD technique, 85
Al foil micrograph, 84
counter electrode, 82
deposition technique drawbacks, 81
dielectric films, 83
dry-etching, 81
integrated passive device, 89
intrinsically conducting polymers, 83
leakage current reduction, 83
MIM nanocapacitor arrays, 83
oxynitrides, 82
PEDT-based capacitors, 83
reactive ion etcher, 84
wet-etching, 81
Etching; see also Etched-foil Nanocapacitors
Mesa etching, 696
Piranha etch, 183
reactive ion etching, 728
selective chemical etching, 539
wet etching, 85
Exchange-correlation (XC), 718
functionals, 872
Exciton fine structure, 837–838
Exotic elements, 867
Extended Hückel theory (EHT), 873
parameters, 874
EY spin-relaxation mechanism, see Elliott–Yafet spin-relaxation mechanism (EY spin-relaxation mechanism)
F
FA, see Formic acid (FA); Full adder (FA)
Fanout, 766
driver magnetization states, 769
nanomagnet, 767
Faradaic redox reactions, 451
Fast Fourier transform (FFT), 875
Fast multipole method, 17; see also Corrected Coulomb approach; Particle–particle–particle–mesh coupling method
FC magnets, see Ferromagnetically coupled magnets (FC magnets)
FE, see Field emission (FE)
FEM, see Finite element method (FEM)
FENA, see Functional Engineered Nano Architectonics (FENA)
FEOL, see Front-end-of-line (FEOL)
Ferromagnetically coupled magnets (FC magnets), 766
Ferromagnetic material switching speeds, 856
in-plane vs. partially perpendicular materials, 860, 861
in-plane vs. perpendicular materials, 857–860, 861
low vs. high HK in-plane materials, 856–857
FET, see Field effect transistor (FET); Fast Fourier transform (FFT)
Few-layer graphene (FLG), 401; see also Graphene-on-diamond devices
FIB, see Focused ion beam (FIB)
Field effect transistor (FET), 61
Field emission (FE), 93
phenomena, 168
Field emission scanning electron microscope (FE-SEM)
Field programable gate array (FPGA), 570
application-dependent testing of, 571
Field-coupled computing, 792
cellular automata architectures, 792
energy minimization, 793
magnetic coupling, 792
quantum tunneling, 792
Field-coupled nanomagnets, 781
Field-effect mobility, 518
Field-programmable nanowire interconnect (FPNI), 299
Fin field effect transistors (FinFETs), 547, 717; see also CNTFET SRAM design
FinFETs, see Fin field effect transistors (FinFETs)
Finite element method (FEM), 475, 875
Finite-difference solver, 359
FLG, see Few-layer graphene (FLG)
Floating catalyst method, 447
fMRI, see Functional MRI (fMRI)
F–N, see Fowler–Nordheim (F–N)
FN tunneling, see Fowler–Nordheim tunneling (FN tunneling)
Focused ion beam (FIB), 136
irradiation, 780
piranha etch, 183
Formic acid (FA), 448
4-D, see Four-dimension (4-D)
Four-dimension (4-D), 272
Four-layer reliable hardware architecture (4LRA), 592
Fourier transform infrared (FTIR), 616, 657
4LRA, see Four-layer reliable hardware architecture (4LRA)
Fowler–Nordheim (F–N), 168
activation, 168
Fowler–Nordheim tunneling (FN tunneling), 123, 138
barriers, 123
electrical strengths for, 125
modified, 124
parameters, 126
probability, 124
FPGA, see Field programable gate array (FPGA)
FPNI, see Field-programmable nanowire interconnect (FPNI)
Free ferromagnetic layer magnetization, 852
Free layer magnetization dynamics, 853–854; see also Spin-transfer torque random access memory (STT-RAM)
Frequency-limiting skin effect, 647
Front-end-of-line (FEOL), 43
FST switching, see Full-spin torque switching (FST switching)
FTIR, see Fourier transform infrared (FTIR)
Full adder (FA), 67
Full width half maximum (FWHM), 384, 427
Full-spin torque switching (FST switching), 814
Functional Engineered Nano Architectonics (FENA), 406
Functional MRI (fMRI), 194
Functional yield, 539
FWHM, see Full width half maximum (FWHM)
G
GAA, see Gate-all-around (GAA)
GAA multiple-channel nanowire TFT variations, 727, 735
average grain size, 731
experiment, 728
Poisson area scatter model, 728
Poisson distribution probability, 731
subthreshold swing mean, 730, 733
TEM images, 729
threshold voltage, 730, 733, 731
transfer characteristics of, 731, 734
transfer curve comparison, 729
GAA poly-Si NW TFT, 727; see also GAA multiple-channel nanowire TFT variations
GAA Si-NWFET, 737, 746–747; see also Nanowire field-effect transistor (NWFET)
channel resistance, 738
device structure and C–V measurement, 741–742
equivalent circuit diagram of MOSFET, 738
parasitic bottom transistor turning-on effect analysis, 745–746
series resistance extraction procedure, 738–741
SiGe layer roles, 744
Y parameter in planar MOSFET and NWFET, 739
GaAs matrix, 838
AlGaAs shell growth, 606
buffer layer growth, 605, 606–607
core–shell, 611
double GaAs buffer layer structure, 607
grown on Si (111) substrates, 607
growth of III–V nanowires, 604
High-magnification TEM images, 610
HR-TEM images, 610
PL emission peaks, 611
in situ annealing, 607
structure improvement, 608–609
types of, 608
Ga-doped ZnO films (GZO films), 687
GaN nanowires (GaN NWs), 674; see also Surface-enhanced Raman scattering (SERS)
GaN NWs, see GaN nanowires (GaN NWs)
Gas-phase oxidations, 451
Gate length, 687
Gate-all-around (GAA), 737; see also GAA Si-NWFET
nanowire transistor, 720
TEM images of, 729
transfer curves, 729
General-purpose gate (GPG), 143, 151
circuit model of, 152
connections for common logic functions, 153
function, 152
logic function of, 152
SEM image of, 151
XOR and XNOR simulation, 153, 155
Generalized gradient approximation (GGA), 411, 718
meta, 872
Germanium band structure, 873
GGA, see Generalized gradient approximation (GGA)
GIC, see Graphite intercalation compound (GIC)
Glucose, 656
GNPs, see Graphite nanoplatelets (GNPs)
GNRs, see Graphene nanoribbons (GNRs)
Grain boundary, 727
Graphene, 93, 209, 365, 393, 399, 409; see also Disordered graphene; Graphene band gap modification; Graphene nanoribbons (GNRs); Graphene nanotransistors; Graphene-on-diamond devices; Highly oriented pyrolytic graphite (HOPG); Low-stress graphene transfer; Patterned graphene printing
assembly of graphene sheets, 374
based field-effect transistor, 377
bilayer, 409
chemical doping, 373
chemical modification of, 410
controlled modifications of, 106
current–voltage characteristics of, 377
CVD, 383
deposition, 373
device design and fabrication, 374
device fabrication, 374
device output and transfer characteristics, 378
direct transfer method, 366
electrical characteristics, 377–379
electrical resistance of, 370
electrode design, 374
graphene–metal interaction, 413
handling of, 373
large-area monolayer, 94
MA-Gr, 410
material strength, 373
molecular structures of functionalized, 410
solution, 375
testing scheme of deposited, 379
wider strips, 410
Graphene band gap modification, 409, 418; see also Graphene
binding energy, 412
calculated band structures, 414
electronic properties, 413–418
geometrical properties, 412–413
MA-Gr band structures, 416
metal atoms electronic configuration, 413
methods, 411
PFPA-functionalized graphene band gaps, 410
spin-resolved density, 418
synthesis strategy, 412
Graphene nanoribbons (GNRs), 809; see also All-spin logic (ASL); CMOS (Complementary metal–oxide–semiconductor); Interconnects
atomic SOC, 819
diffusion coefficient in, 815
edge-scattering MFP, 817
effective MFP of electrons in, 818
electron diffusion coefficient vs. width, 818
electron MFP, 815
energy-dispersion relation of, 816
low-field 1D conductivity, 817
spin-relaxation length in, 819
Graphene nanotransistors, 393, 397
device electrical measurements, 394–396
graphene preparation and device fabrication, 393–394
I–V characteristics, 395
RF transistor device micrograph, 394
small-signal analysis and discussion, 396–397
top gates, 394
Graphene-on-diamond devices, 399, 406
breakdown current testing of, 405
electrical and thermal characteristics of, 404
graphene device fabrication, 402–403
graphene preparation and characterization, 401
I–V characteristics, 404
micro-Raman spectroscopic analysis, 402
optical microscopy image, 403
SEM images, 404
substrate material selection, 400
synthetic diamond growth, 400–401
two and three-terminal devices, 403
Graphite intercalation compound (GIC), 210
Graphite nanoplatelets (GNPs), 209; see also Graphene; Integrated stress monitoring; Nanocomposites
film fabricated for DC electrical conductivity measurement, 211
fracture surface, 212
Graphone, 366
Ground–signal–ground configuration (G-S-G configuration), 395
G-S-G configuration, see Ground–signal–ground configuration (G-S-G configuration)
GZO films, see Ga-doped ZnO films (GZO films)
H
HA, see Hard axis (HA)
Hafnium-based gate dielectric materials, problems in, 61
Half-selected devices, 301
Hamming distance, 274
HAR, see High-aspect-ratio (HAR)
HAR metallic nanowires, 641, 649–650
AAO templates, 644
application scheme for, 647
characterization, 644
cyclic voltammetry, 644
equivalent electrical circuit diagram, 649
experimental section, 642
frequency-limiting skin effect, 647
kinetic growth curve of Ag NWs, 648
method to fabricate, 642
pulse frequencies, 644
template preparation, 642, 644
Hard axis (HA), 812
HARDI, see High angular resolution diffusion imaging (HARDI)
HBT, see Heterojunction bipolar transistor (HBT)
HCN, see Hydrogen cyanide (HCN)
HDL framework, 230; see also HDLQ; Magnetic Quantum-Dot Cellular Automata (MQCA)
propagation and cell placement, 232
Verilog code for magnetization functions, 232
HDL-based design tool (HDLQ), 226
HDLM, see HDL framework
HDLQ, see HDL-based design tool (HDLQ)
Heat transfer coefficient, 358
HEMTs, see High-electron-mobility transistors (HEMTs)
Heterojunction bipolar transistor (HBT), 144
HEV, see Hybrid electric vehicles (HEV)
Hexamethyldisilazane (HMDS), 515
Hexamethylenetetramine (HMT), 667
HF, see Hydrofluoride (HF)
HFCV, see hydrogen fuel-cell vehicle(HFCV)
High angular resolution diffusion imaging (HARDI), 195
High-aspect-ratio (HAR), 423; see also HAR metallic nanowires
High-electron-mobility transistors (HEMTs), 145
High-energy particle collision, 360–361
High-resistance state (HRS), 300
determination, 301
readout voltage distribution, 306–307
sneak-path, 315
High-resistive tunnel junctions, 190; see also Single-electron transistor (SET)
capacitance of tunnel junction, 181
charge conduction, 181
electron tunneling, 182
tungsten oxide thickness estimation, 184
tungsten oxide tunnel junctions, 187
High-resolution (HR), 605
High-κ/metal-gate (HKMG), 27
Highest occupied molecular orbital (HOMO), 52, 415
Highly oriented pyrolytic graphite (HOPG), 383; see also Graphene; Patterned graphene printing
graphene ~100 nm FWHM line pattern on, 386
micron-scale pattern preparation, 384
nanoscale pattern preparation, 384
pattern generation on, 384
SEM image of TEM grid pattern on, 385
HKMG, see High-κ/metal-gate (HKMG)
HMDS, see Hexamethyldisilazane (HMDS)
HMT, see Hexamethylenetetramine (HMT)
Homo-junction diode sensors, 616
HOPG, see Highly oriented pyrolytic graphite (HOPG)
Hot-spot effect, 677
HR, see High-resolution (HR)
HRS, see High-resistance state (HRS)
HSQ, see Hydrogen silsesquioxane (HSQ)
Hubbard model, 873
Human Brain Project, 194
Humidity, 114
Humidity sensing, 112
capacitance measurement set up, 113
capacitance–humidity relationship, 114
capacitor’s capacitance, 115
device fabrication and characterization, 113
humidity-dependent capacitance, 113
response and recovery times, 115
Hybrid, 327
Hybrid electric vehicles (HEV), 453
Hybrid memory cell, 327, 339; see also Memory cell, proposed; Memristor
memory operations, 328
relationship between circuit elements, 328
Hydrofluoride (HF), 605
Hydrogen cyanide (HCN), 448
Hydrogen fuel-cell vehicle(HFCV), 45
Hydrogen silsesquioxane (HSQ), 44
Hydrogenated SiNWs, 701
5-(4-hydroxyphenyl)-10, 15, 20-tri (p-tolyl) zinc(II) porphyrin (Zn(II) TTPOH), 45
I
IAS, see Institute for Advanced Studies (IAS)
IC, see Integrated circuit (IC)
ICPs, see Intrinsically conducting polymers (ICPs)
Ideal substrate, 818
IDES, see Interdigitated electrode structure (IDES)
IEP, see Isoelectric point (IEP)
IGSSE, see International Graduate School of Science and Engineering (IGSSE)
ILDs, see Inter-layer dielectrics (ILDs)
Indium tin oxide (ITO), 43
Infrared (IR), 437
Inkjet printing, 510
Institute for Advanced Studies (IAS), 531
Insulator properties, 852
Integrated circuit (IC), 3
Integrated passive device (IPD), 89
Integrated stress monitoring, 209; see also Electromechanical modeling; Graphite nanoplatelets (GNPs); Nanocomposites
electromechanical modeling, 216–218
stress sensor modeling, 214–216
thermal interface materials, 209
Integration of SETs using activation, 173–175, 178
Interaural time difference (ITD), 350
Interconnects, 808, 823–824; see also All-spin logic (ASL); Brain; CMOS (Complementary metal–oxide–semiconductor); Graphene nanoribbons (GNRs); Neurons
ASL circuit energy vs. overdrive, 822
brain and, 193
capacitance, 808
challenge associated with, 808
delay vs. interconnect length, 821
electrical and spintronic circuit comparison, 821
electron spin flux, 815
energy dissipation vs. interconnect length, 823
resistance evaluation, 810
spin diffusion time constant through, 815
steady-state carrier concentration in, 815
total transmitter-side resistance, 822
Interdigitated electrode structure (IDES), 467
Interface trap fluctuation (ITF), 27
Interface traps (ITs), 27, 29; see also Random dopants
fluctuations of drain current–gate voltage, 31
and RDs comparison, 34
surface potential and current density, 32
threshold voltage fluctuation, 33
Inter-layer dielectrics (ILDs), 44
International Graduate School of Science and Engineering (IGSSE), 531
International Technology Roadmap for Semiconductors (ITRS), 193
postsilicon innovations, 547
Inter-spike intervals (ISIs), 341
Intrinsically conducting polymers (ICPs), 83
Inverse bit line (BL’), 332
Inverting BDT, 148
Ion sensitivity of graphene, 379–381; see also Graphene
Ionic liquid electrolytes, 454
Ionosorption, 189
IPA, see Isopropyl-alcohol (IPA)
IPD, see Integrated passive device (IPD)
IR, see Infrared (IR)
ISIs, see Inter-spike intervals (ISIs)
Isoelectric point (IEP), 656
Isopropyl-alcohol (IPA), 628
ITD, see Interaural time difference (ITD)
ITF, see Interface trap fluctuation (ITF)
ITO, see Indium tin oxide (ITO)
ITRS, see International Technology Roadmap for Semiconductors (ITRS)
ITs, see Interface traps (ITs)
I–V, see Current–voltage (I–V)
J
Jahn–Teller effect, 413
K
Kaelble’s model, 512
surface free energy estimation, 513
Kelvin probe force microscopy (KPFM), 48
Kohn–Sham
potential, 495
Schrödinger-type equation, 494
KPFM, see Kelvin probe force microscopy (KPFM)
L
Landau–Lifshitz–Gilbert equation (LLG equation), 758, 852
modified, 853
Landauer–Büttiker formalism, 869
Laser ablation, 111
Latch-up, 356
Lateral spin–orbit coupling (LSOC), 827
Lathanum incorporated hafnium, 61, 65; see also Metal–oxide–semiconductor (MOS)
AFM characteristics of, 63
capacitance–voltage characteristics, 64
current–voltage characteristics, 64
electrical parameters of MOS devices, 65
experimental details, 62
results, 63
XRD spectra of, 63
Lattice-based integrated-signal nanocellular automata (LINA), 256, 266
assigning binary value, 257
correct logical output probability, 258–260, 263
design and simulation, 264–265
full adder cell, 265
geometrical layout, 258
integrated signals of, 257
logic structures, 260
majority and fan-out gates, 262
minimum half-pitch and wire design, 264
reliability, 257
theory and advantages, 256
3-wide LINA majority gate, 261
vs. traditional QCA, 257
wire width, 357
Lattice-based integrated-signal nanocellular automata-type QCA (LINA-QCA), 256
Lazy AND gate, 229
LDA, see Local density approximation (LDA)
LDoS, see Local density of states (LDoS)
Leakage current reduction, 83
LEDs, see Light emitting diodes (LEDs)
Leyden jar, 79
LFSR, see Linear feedback shift registers (LFSR)
Liénard equation, 291
conditions for limit cycle, 292
Light emitting diodes (LEDs), 655
Light microscopy (LM), 385
Li-ion batteries, see Lithium-ion batteries (Li-ion batteries)
conditions for, 292
LINA, see Lattice-based integrated-signal nanocellular automata (LINA)
LINA-QCA, see Lattice-based integrated-signal nanocellular automata-type QCA (LINA-QCA)
Linear feedback shift registers (LFSR), 571
Linear memristive model, 318–320; see also Non-linear memristive model
filament length range limitation, 318
memristive elements connected antiserially, 319
Spice simulation, 319
Lithium-ion batteries (Li-ion batteries), 627; see also Batteries
LLG equation, see Landau–Lifshitz–Gilbert equation (LLG equation)
LM, see Light microscopy (LM)
LNA, see Low-noise amplifiers (LNA)
Local density approximation (LDA), 411
for electron–ion interaction, 702
for XC potential, 718
Local density of states (LDoS), 722, 723
Logic computation basic operations, 757
read circuit, 759
STT clocking, 759
writing inputs, 758
Logic gates, 228; see also Majority gates (MAJ); Yield improvement technique analysis
CFC, 761
dictator majority gate, 229
lazy AND gate, 229
MOSFET gate, 47
n-input AND gate, 236
novel n-input AND gate in MQCA, 235–236
in QCA, 240
TGs, 68
Logic-in-memory design, 753; see also Nonvolatile logic-in-memory architecture
Low-field 1D conductivity, 817
Low-noise amplifiers (LNA), 536
Low-pass filter (LPF), 440
Low-power reliable nano adders, 67; see also CMOS scaling
CLRCL, 68
low-power FA, 68
measuring power consumption and delay of FA, 72
mirrored FA, 71
power dissipation, 70
sizing simulations, 71
threshold voltage variation effects, 68–69
transistor dimensions, 73
Low-pressure CVD method (LPCVD method), 448, 728
Low-resistance state (LRS), 300
determination, 301
readout voltage distribution, 306–307
sneak-path, 315
Low-stress graphene transfer, 365, 367, 371
graphene to graphane, 366, 371
hydrogen-plasma-treated single-layer graphene, 369, 370
remote hydrogenation plasma, 368
transferred, 369
Lowest unoccupied molecular level (LUMO), 415
LPCVD method, see Low-pressure CVD method (LPCVD method)
LPF, see Low-pass filter (LPF)
LRS, see Low-resistance state (LRS)
LSOC, see Lateral spin–orbit coupling (LSOC)
LUMO, see Lowest unoccupied molecular level (LUMO)
M
MA, see Metal-arene (MA)
Macropores, 446
MA-functionalized graphene (MA-Gr), 410; see also Graphene
ball-and-stick presentation, 412
band structures, 416
geometrical parameters of, 414
MAG, see Maximum available gain (MAG)
Magnetic core memories, 751
Magnetic coupling, 792
Magnetic field-based computing systems (MFC systems), 797, 801
Magnetic force microscope (MFM), 766
image of second full adder design, 774
images of programmable majority gate, 768
Magnetic Quantum-Dot Cellular Automata (MQCA), 225, 236, 811; see also HDL model of MQCA; Quantum-dot cellular automata (QCA)
basic logic gate for, 228
binary wire, 233
bistable feature and binary wire of, 228
cascade propagation failure, 228
dictator majority gate, 229
layout and waveform, 234.
lazy AND gate, 229
logic operation and signal propagation, 227
majority gate, 233
MQCA majority gate, 228
n-input AND gate, 236
novel n-input AND gate in MQCA, 235–236
truth table, 229
Verilog code of MQCA wire, 233
waveform of MQCA wire., 233
Magnetic resonance imaging (MRI), 194
Magnetic toroids, 751
Magnetic tunnel junctions (MTJs), 752, 811, 849, 850; see also Spin-transfer torque random access memory (STT-RAM)
with access transistor, 753
column inside logic-in-memory architecture, 757
dipolar magnetic coupling, 755
electrical resistance of, 752
inside MRAM, 752
MTJ-CMOS unit, 752
placement in logic-in-memory architecture, 755
STT-clocking phases in, 758
TMR, 752
Magnetoresistive RAMs (MRAMs), 752
layout, 753
logic states in, 752
MTJ, 752
MA-Gr, see MA-functionalized graphene (MA-Gr)
MAJ, see Majority gates (MAJ)
Majority gates (MAJ), 591, 766; see also Majority logic synthesis
based voting technique, 592
with driver magnets, 768
full adder design constructed from, 771
MFM images of programmable, 768
Majority logic synthesis, 268, 275, 278; see also Minimal majority gate mapping
benchmark circuit synthesis comparisons, 283
conversion to majority gates, 279–280
logic function of benchmark circuit majority, 281
MALS implementation, 282
remove repeated terms, 281
simplifying and decomposing, 276
standard functions, 277
Maskless printing, 510
Mason’s power gain (MSG), 395
Maximum available gain (MAG), 693
MBE, see Molecular beam epitaxy (MBE)
MCAM, see Memristor-based content addressable memory (MCAM)
MCD, see Microcrystalline diamond (MCD)
MD, see Molecular dynamics (MD)
MDS, see Multidimensional scaling (MDS)
Mean free path (MFP), 535, 815
Memory; see also Crossbar memory array; CMOS; Eight-transistor (8T); Memory cell, proposed; QCA
devices, 548
MCAM, 330
modules, 548
thermal memory buckling mechanism of, 356–358
Memory cell, proposed, 332, 339; see also Hybrid memory cell; Memristor
comparison with CMOS, 337, 338–339
driver circuit for WRITE operation, 334
power dissipation, 338
refresh operation simulation, 337
transistor sizing simulation, 337
WRITE /READ times and voltages, 338
WRITE time vs. memristance range, 335, 336
Memristor, 290–291, 327, 328–330; see also Hybrid memory cell; Memory cell, proposed; Resistive switches
current–voltage relationship, 329
doped region width, 329
electric charge, 328
as memory element, 329
as switching resistance device, 329
TiO2 film between Pt electrodes, 329
as variable resistor, 328
Memristor-based content addressable memory (MCAM), 330
MEMS, see Micro-electromechanical systems (MEMS)
Mesa etching, 696
Mesopores, 446
Metal-arene (MA), 410
metal atoms electronic configuration, 413
Metal-bis-arene, 411
Metal–insulator–metal (MIM), 83
capacitors, 535
nanocapacitor arrays, 83
Metal-nitride-oxide-semiconductor (MNOS), 120
Metal–organic chemical vapor deposition (MOCVD), 604
Metal–oxide–metal tunneling diodes. (MOM tunneling diodes), 134, 136
direct tunneling, 138
electrical characterization and simulations, 138
fabrication, 137
implementation challenges, 140
morphological characterization, 139
Metal–oxide–semiconductor (MOS), 64, 84; see also CMOS; Lathanum incorporated hafnium
capacitors, 535
electrical parameters of, 65
Metal–oxide–semiconductor field effect transistor (MOSFET), 3, 27, 143
based memory industry, 849
gate, 47
Metallic carbon nanotubes, 535; see also Carbon nanotubes (CNTs)
Metallic single-walled CNT (m-SWCNT), 493
Metallic–metallic junction points (MM junction points), 529
Metallic–semiconducting junction points (MS junction points), 529
Metallocenes, 411
3-Methylimidazoliumbis(trifluoromethylsulfonyl) imide (EMIM-Tf2N), 454
Methyl-silsesquioxane (MSQ), 44
MFC systems, see Magnetic field-based computing systems (MFC systems)
MFM, see Magnetic force microscope (MFM)
MFP, see Mean free path (MFP)
MFS, see Minimum feature size (MFS)
Microcrystalline diamond (MCD), 400; see also Graphene-on-diamond devices
Micro-electromechanical systems (MEMS), 119, 423, 471
technology, 42
Microwave plasma chemical vapor deposition (MPCVD), 400
MIM, see Metal–insulator–metal (MIM)
MIMD, see Multiple-instruction-multiple-data (MIMD)
Minimal majority gate mapping, 267, 283; see also Majority logic synthesis
Hamming distance, 274
majority expression, 272
QCA cell, 268
QCA clock, 269
standard functions, 274–275, 276
Minimum feature size (MFS), 807
edge-scattering, 817
electron, 815
of electrons in GNR, 818
Mixed-mode switching (MM switching), 814
ML, see Multilayers (ML)
MLA, see Molecular logic array (MLA)
MLCC, see Multilayer ceramic capacitor (MLCC)
MLG, see Multilayer graphene (MLG)
MM junction points, see Metallic–metallic junction points (MM junction points)
MM switching, see Mixed-mode switching (MM switching)
MNOS, see Metal-nitride-oxide-semiconductor (MNOS)
Mobility fluctuation-based analytical model, 18–19; see also Analytical models
MOCVD, see Metal–organic chemical vapor deposition (MOCVD)
Modified array model, 527, 528
Molecular beam epitaxy (MBE), 135
Molecular dynamics (MD), 711
Molecular logic array (MLA), 571
MOM tunneling diodes, see Metal–oxide–metal tunneling diodes. (MOM tunneling diodes)
Monolayer systems, 42
Monte Carlo
free-flight scatter, 713
molecular dynamics–3D Poisson–3D thermal solver, 712
MoO3–MWCNT composites, 94; see also Nanocomposites
cathodic half-cycle, 99
electrochemical responses, 99
low equivalent series resistance, 103
nanowire crystallinity, 103
redox kinetics, 103
specific capacitance, 100, 101
structural changes, 101
Moore’s law, 570
MOS, see Metal–oxide–semiconductor (MOS)
MPCVD, see Microwave plasma chemical vapor deposition (MPCVD)
MQCA, see Magnetic Quantum-Dot Cellular Automata (MQCA)
MRAMs, see Magnetoresistive RAMs (MRAMs)
MRI, see Magnetic resonance imaging (MRI)
MSG, see Mason’s power gain (MSG)
MS junction points, see Metallic–semiconducting junction points (MS junction points)
MSQ, see Methyl-silsesquioxane (MSQ)
m-SWCNT, see Metallic single-walled CNT (m-SWCNT)
MTJs, see Magnetic tunnel junctions (MTJs)
Multicell circuit functionality, 156–157
Multidimensional scaling (MDS), 795
Multigrid method, 875
Multijunction SET device, 184, 186
Multilayer ceramic capacitor (MLCC), 80
Multilayer graphene (MLG), 384
pattern on glass slide, 387
Multilayers (ML), 784
Multiple-instruction-multiple-data (MIMD), 793
Multiwalled carbon nanotubes (MWCNTs), 93, 424; see also Carbon nanotubes (CNTs); MoO3–MWCNT composites; MWCNT IR sensor readout circuit
capacitance reduction, 98
controlled modifications of, 106
defect creation, 97
electrochemical performance of, 96, 97
ion irradiation of, 106
knock-on atomic displacement, 97–98
pristine MWCNT, 95
Raman analysis, 96
MUX, see Multiplexer (MUX)
MWCNT IR sensor readout circuit, 437, 442; see also Infrared (IR)—sensors
ADC PCB board, 440
CNT detector signal monitoring, 438
C type IV converter, 439
current-to-voltage conversion, 438, 439
readout in single pixel camera, 441
readout test on CNT-based IR detector, 441
recovery image, 442
requirements of readout circuits, 438
R type IV converter, 438
single pixel IR imaging, 442
testing system hardware setup, 440
MWCNTs, see Multiwalled carbon nanotubes (MWCNTs)
N
Nano antennas for energy conversion, 133; see also Metal–oxide–metal tunneling diodes. (MOM tunneling diodes)
antenna length, 133
antenna-coupled MOM diodes, 134
autarkic power plants, 133
current density, 138
F–N tunneling, 138
nano antenna fabrication, 135–136, 137
nanotransfer printing, 134–135
photovoltaics, 133
renewable energy sources, 133
Schottky diodes, 134
stamp, 134
transfer-printing process, 137
nanowires in, 572
Nanocapacitor with copper nano-electrode, 88
Nano-CMOS, see Nanometer scale complementary metal–oxide semiconductor (Nano-CMOS)
Nanocomposites; see also Graphite nanoplatelets (GNPs); Integrated stress monitoring; MoO3–MWCNT composites
DC effective conductivity of, 212
tensile properties, 213
tensile stress–strain characteristic of, 214
tensile test setup, 213
Nano-crystalline silicon (nc-Si), 342
Nanocrystalline ZnO (nc-ZnO), 686
Nanodevices, 287, 296–297; see also Describing function (DF); Liénard equation
v–i characteristics plot, 287
Nanoelectromechanical systems (NEMS), 119, 471
Nanofabric, 571
Nanogaps
charging energy of activated SETs, 176, 177
current–voltage curves, 169–170, 171–172, 173, 177
EB lithography, 168
electromigration method, 167
field emission phenomena, 168
integration of SETs using activation, 173–175, 178
resistance and activation duration, 170–171, 172, 176, 178
resistance dependence, 174
structural and electrical property tuning, 169
NanoHUB. org, 4; see also Nanometer scale complementary metal–oxide semiconductor (Nano-CMOS)
Nanoislands
tungsten, 185
tungsten oxidation, 183–184, 185
Nanomagnet, see Magnetic Quantum-Dot Cellular Automata (MQCA); Nanomagnetic logic (NML)
correspondence between nanomagnets and vision problem formulation, 796
dipole field, 783
dipole moment, 783
easy axis, 754
energy landscape and clocking process, 766
FIB irradiation and, 780
field-coupled, 781
hard axis, 754
magnetic interaction, 754
NML wires, 766
for quadratic minimization problems, 791
saddle point, 754
simplified physical model for, 781
single domain behavior and, 794
switching field of, 783
Nanomagnet dynamics, 812; see also All-spin logic (ASL)
elliptical, 813
magnetic moment, 812
material and design parameters for, 813
shape anisotropy energy of, 812
Nanomagnet full adder circuit, 765, 775–776; see also Nanomagnetic logic components of full adder; Nanomagnetic logic full adder
design flaw, 773
fabrication and characterization, 771–773
fanout, 766
NML components, 765
OOMMF simulations, 773
proposed designs, 773–775, 776
reduced footprint design, 776
reduced footprint NML full adder design, 774
SEM and MFM images, 773
simulated switching field vs. dot length, 772
including three-input majority gates, 772
Nanomagnetic compact model, 785, 786
Nanomagnetic logic (NML), 779, 788–789; see also Nanomagnet full adder circuit; Nanomagnet
applications for, 789
basic unit of, 765
benefits, 765
bit representation, 754
building blocks for, 780
circuits, 766
clocked single-layer nanomagnet in, 754
components, 765
Co/Ni multilayers, 789
devices, 766
experiments, 782
fabrication, 782
FIB irradiation, 780
Gaussian distribution in, 788
logic behavior and performance, 762
logic execution, 753
majority gate, 766
nanomagnetic 1-bit full adder, 787–788
nanomagnetic compact model, 785, 786
nulled condition, 765
perpendicular, 780
with PMA, 779
simulations, 786
working principles of, 753
Nanomagnetic logic components of full adder, 766
compute magnet, 767
driver magnets, 767
five-nanomagnet-long vertical wire, 767
nanomagnet wires, 766
programmability and majority gate, 766–767
Nanomagnetic logic full adder, 770; see also Nanomagnet full adder circuit
constructed from majority gates, 771
functionality, 771
Nanomechanical memory, 356, 357
Nanometer (nm), 641
Nanometer scale complementary metal–oxide semiconductor (Nano-CMOS), 3, 12–13, 27; see also CMOS (Complementary metal–oxide–semiconductor)
bulk-CMOS model files, 5
characteristics, 5
model parameters, 5
nine-stage inverter circuit, 6
tool, 4
Nanoparticle memory TFT (NP-TFT), 342, 343; see also Simulation program with integrated circuit emphasis (SPICE)
threshold voltage shift, 343, 344
transfer characteristics of, 344
Nanoparticles (NPs), 616
NanoPLA, see Nanoscale programmable logic array (NanoPLA)
Nanoscale application-specific integrated circuit (NASIC), 299
Nano-scale capacitors with conformal nano-dielectrics, 79, 89; see also Etched-foil Nanocapacitors
aluminum electrolytic capacitors, 80
capacitor technology limitation, 79, 80
ceramic capacitor, 79
passive components, 79
silicon trench capacitors, 84–85
tantalum capacitors, 82
target capacitance enhancement, 80
trench capacitors, 80
Nanoscale Integration and Modeling Group (NIMO Group), 4
Nanoscale programmable logic array (NanoPLA), 299
Nanoscale structures, 870
Nanotechnology, 287
benefits and challenges of, 570
Nanotubes (NTs), 615; see also Carbon nanotubes (CNTs)
Nanowire capacitor (NWCAP), 742
Nanowire field-effect transistor (NWFET), 737, 746; see also GAA Si-NWFET
capacitance components, 747
charge distribution in n-type, 743, 745, 746
C–V characterization in, 741–742
extracted series resistance values, 741
measured current, 741
with nanowire channels, 744
single dopant effect on, 721
with twin Si nanowires, 742
Nanowires (NWs), 603; see also Cu silicide nanowires; Doped SnO2 NWs synthesis
defects, 603
detection, 657
interconnecting incorporation of nanoparticles, 641
poly-Si NWs, 728
synthesis method, 615
NASIC, see Nanoscale application-specific integrated circuit (NASIC)
National Institutes of Health (NIH), 656
N-channel metal oxide semiconductor (NMOS), 47, 330, 536
transistors, 332
WRITE and READ times vs. transistor size, 337
nc-Si, see Nano-crystalline silicon (nc-Si)
nc-ZnO, see Nanocrystalline ZnO (nc-ZnO)
nc-ZnO TFTs, 685, 698–699; see also Thin film transistor (TFT); Transparent thin film transistor (TTFT)
baseline nc-ZnO thin film transistor, 687
current–voltage characteristics of, 697
field-effect mobility for, 691, 692
growth temperature influence, 687–689
high-speed transistors, 692–694
indium-free TTFT, 695
I–V characteristics of, 689, 690
parasitic capacitance, 692, 693
PLD-grown ZnO thin films, 698
small-signal microwave characteristics of, 694, 695
small-signal microwave performances, 693, 694
thin film analysis, 687
thin film deposition and device fabrication, 686–687
thin film transistors, 689
transconductance dependence on gate length, 691
transfer characteristics of, 691, 697
transparent, 696
transparent transistors, 694
x-ray diffraction patterns, 689
ZnO film over gate metal, 688
NDR, see Negative differential resistance region (NDR)
Near-edge x-ray absorption fine-structure spectroscopy (NEXAFS), 401
NEB, see Nudged elastic bands (NEB)
NEDO, see New Energy and Industrial Technology Development Organization (NEDO)
Negative differential resistance region (NDR), 829
NEGF, see Nonequilibrium Green’s function (NEGF)
NEMS, see Nanoelectromechanical systems (NEMS)
Neurons, 195; see also Brain; Interconnects
action potential, 197
impulse propagation, 195
myelinated, 196
refractory period, 197
Neurotransmitters, 194
New Energy and Industrial Technology Development Organization (NEDO), 520
NEXAFS, see Near-edge x-ray absorption fine-structure spectroscopy (NEXAFS)
NIH, see National Institutes of Health (NIH)
NIMO Group, see Nanoscale Integration and Modeling Group (NIMO Group)
n-input AND gate, 236
Nitrophenols, 661
nm, see Nanometer (nm)
N-methylpyrrolidinone (NMP), 425, 526
NML, see Nanomagnetic logic (NML)
n-NWFET, see n-type NWFET (n-NWFET)
Nonconventional devices, 144–145
Nonequilibrium Green’s function (NEGF), 717, 872
formalism, 718
Hamiltonian of, 718
implementations, 874
simulations, 717
Non-linear memristive model, 320; see also Linear memristive model
applied equivalent circuit, 320, 321
ionic current, 322
series resistor on I–V characteristics, 322–323
Nonlinearity ratio, 307
Nonvolatile logic-in-memory architecture, 751
benefits of, 761
cell types, 756
CMOS and MTJs interaction, 756
comparison with logic-in-memory architectures, 760–761
comparison with NML, 761
logic behavior and performance, 762
logic built with multilayer STT-MTJs, 761
logic computation basic operations, 757
logic inside architecture operating principles, 753–755
MTJ column, 757
MTJ placement, 755
performance analysis, 760
salient features, 756
STT current-driven clock, 755
two-input AND, 758
NP-TFT, see Nanoparticle memory TFT (NP-TFT)
NPs, see Nanoparticles (NPs)
n-/p-type ZnO nanorod synthesis, 665, 671
N-doped ZnO nanorods, 668
seed layer, 666
SEM images, 669
on Si wafers, 668
XRD and PL spectra, 667–669, 670
XRD patterns, 669
Zn solution concentration effect, 667
NTs, see Nanotubes (NTs)
n-type NWFET (n-NWFET), 743; see also Nanowire field-effect transistor (NWFET)
charge distribution in, 743, 745, 746
C–V curves of, 743
n-type TFTs fabrication, 505, 507–508
Cs @ SWNTs formation process, 506
Cs atom encapsulation, 505
current–voltage curves, 507
experimental, 505
soaking time dependence, 507
Nudged elastic bands (NEB), 873
Nulled condition, 765
Number fluctuation-based model, 17; see also Analytical models
NWCAP, see Nanowire capacitor (NWCAP)
n-wide, see Wire width
NWs, see Nanowires (NWs)
O
OAD, see Oblique angle deposition (OAD)
Object-oriented micromagnetic framework (OOMMF), 780
Oblique angle deposition (OAD), 628
O/C ratio, see Oxygen/carbon atomic ratio (O/C ratio)
Octadecylphosphonic acid (ODPA), 42
Octadecyltrichlorosilane (OTS), 43
ODPA, see Octadecylphosphonic acid (ODPA)
Office of Naval Research (ONR), 406
Oleic acid, 657
FT-IR spectra, 660
ON current degradation simulation results, 711
energy loss paths, 713
incorporation of self-heating effects, 712
Monte Carlo free-flight scatter, 713
Monte Carlo–molecular dynamics–3D Poisson–3D thermal solver, 712
simulated nanowire MOSFET device, 711
single negative impurity impact, 714
solving energy balance equations, 713
On-chip capacitors, 535
1D, see One-dimension (1D)
One-dimension (1D), 27
nanostructure materials, 615
Ostwald ripening mechanism, 619
One electron at a time transport, 144
One-electron Schrödinger equation, 718
ONO, see Oxide-nitride-oxide (ONO)
ONR, see Office of Naval Research (ONR)
OOMMF, see Object-oriented micromagnetic framework (OOMMF)
OPs, see Organophosphorus compounds (OPs)
Optoelectronic device, 437
OR-2 gate, see Two-input OR gate (OR-2 gate)
OR-3 gate, see Three-input OR gate (OR-3 gate)
ORAs, see Output response analyzers (ORAs)
Organic semiconductors, 110; see also Humidity sensing
capacitive sensors, 111
humidity measurement and control, 110
nanoparticle generation, 111
phthalocyanines, 111
sensor materials, 110
sensors based on, 111
synthesis and characterization of, 109, 110
Organophosphorus compounds (OPs), 661
Orthodox theory, 188
OTF, see Oxide thickness fluctuation (OTF)
OTS, see Octadecyltrichlorosilane (OTS)
Output response analyzers (ORAs), 571
Output-node capacitance, 807
Overdrive at receiver nanomagnet, 812
Oxidation processes, 450
Oxide thickness fluctuation (OTF), 30
Oxide-nitride-oxide (ONO), 728
Oxygen/carbon atomic ratio (O/C ratio), 451
Oxynitrides, 82
P
P, see Parallel (P)
Palladium nanoparticles (Pd nanoparticles), 625
PANI, see Polyaniline (PANI)
Parallel (P), 849
plate model, 527
Parallel energy minimizing computation, 791, 801–802
correspondence between vision and magnets, 795–796
digital media object detection, 793
energy minimization co-processor, 793
fabricated nanomagnets, 800
field-coupled computational technologies, 792–793
intricate system of nanomagnets, 801
single domain magnet, 798, 799
Parasitic current paths, 316
Parasitic leakage paths, 300
Partial bias schemes, 310
Particle-based device simulation, 16–17
Particle–mesh coupling (PM coupling), 16
Particle–particle–particle–mesh coupling method, 17; see also Corrected Coulomb approach; Fast multipole method
Particulate capacitors, 85; see also Etched-foil Nanocapacitors
high K ferroelectrics, 87
nanocapacitor with copper nano-electrode, 88
stable dielectric, 86
Tantalum capacitors, 86, 87, 88
three-dimensional trench structure, 86
valve metal challenges, 87
Patterned graphene printing, 384; see also Graphene; Highly oriented pyrolytic graphite (HOPG)
FLG pattern on PDMS, 388
graphene nanowire printing, 388
MLG pattern on glass slide, 387
process for, 386
Pattern generator (PG), 572
Patterning processes, 520
PC, see Propylene carbonate (PC)
PCLO, see Probability of correct logical output (PCLO)
PDF, see Probability density function (PDF)
PDMS, see Polydimethylsiloxane (PDMS)
Pd nanoparticles, see Palladium nanoparticles (Pd nanoparticles)
PDP, see Power-delay product (PDP)
PECVD, see Plasma-enhanced chemical vapor deposition (PECVD)
PEDT, see Polyethylenedioxythiophene (PEDT)
PEDT-based capacitors, 83
PEO, see Polyethylene oxide (PEO)
Percolation-based analytical model, 18; see also Analytical models
Perfluorophenylazide (PFPA), 410
Performance metrics, 528
Perpendicular magnetic anisotropy (PMA), 779
PET, see Positron emission tomography (PET)
Petrick’s method, 582
PFPA, see Perfluorophenylazide (PFPA)
PG, see Pattern generator (PG); Polarity gate (PG)
Phase-change memory, 300
Phonon scattering impact on Si GAA NFETs, 717, 725–726
current reduction in NFET, 722
current spectra, 724
DD multi-subband Silvaco simulations, 725
electron–electron interaction model, 718–720
GAA nanowire transistor, 720
ID–VG characteristics, 721, 722, 724, 725
LDoS along axis of nanowire, 723
NEGF model, 718
one-electron Schrödinger equation, 718
potential energy across channel, 720
Photoluminescence (PL), 657
doping state evaluation, 667
GaAs NWs optical property characterization, 609–610
neutral exciton state identification, 836
Photovoltaics, 133
P3HT, see Poly(3-hexylthiophene) (P3HT)
Phthalocyanines, 111
Physical vapor deposition technique (VPD technique), 629
p-Backbonding process, 418
Piezoelectric effects, 838
PI film, see Polyimide film (PI film)
Piranha etch, 183
Planar single-layer graphene (PSLG), 103–104
Plasma-enhanced chemical vapor deposition (PECVD), 120
silicon oxide and nitride to cover CNT, 425
SiO2 films growth, 686
PLD, see Pulsed laser deposition (PLD)
PLL, see Poly-L-lysine (PLL)
PM coupling, see Particle–mesh coupling (PM coupling)
PMA, see Perpendicular magnetic anisotropy (PMA)
PMMA, see Poly(methyl methacrylate) (PMMA)
PMOS, see p-type metal-oxide-semiconductor (PMOS)
Poisson
area scatter model, 728
distribution probability, 731
Polarity gate (PG), 330
Polyaniline (PANI), 454
Polydimethylsiloxane (PDMS), 383
Polyethylene oxide (PEO), 82
Polyethylenedioxythiophene (PEDT), 82
Poly(3-hexylthiophene) (P3HT), 43, 82
Polyimide film (PI film), 510; see also Printing fabrication technology
I–V and C–V characteristics, 514
thickness and conductance, 514
Poly-L-lysine (PLL), 606
Poly(methyl methacrylate) (PMMA), 94, 796
based transfer, 365
Polynomial VCCS (PVCCS), 147
Polypyrrole (PPy), 454
Poly-Si, 727
Polysilicon thin-film transistors (Poly-Si TFTs), 727
Poly-Si TFTs, see Polysilicon thin-film transistors (Poly-Si TFTs)
Poly(sodium 4-styrenesulfonate) (PSS), 657
Polythiophene (PT), 454
Porous silicon (PS), 665–666; see also n-/p-type ZnO nanorod synthesis
Porphyrins, 43; see also Copper diffusion barriers; Work function tuning; Ultra-large scale integration (ULSI)
with different central metal ions, 49
MOSFET gate, 47
POS, see Product of sums (POS)
Positive stress voltage, 124
Positron emission tomography (PET), 194
Power dissipation comparison, 349
Power supply rejection ratio (PSRR), 439
Power-delay product (PDP), 73
PPy, see Polypyrrole (PPy)
Predictive technology model (PTM), 4
Printed CNT transistors, 515
AFM phase image, 519
field-effect mobility, 518
field-effect mobility and on/off ratio, 519
Ion dependence of Ioff, 518
Ion dependence of on/off ratio, 517
morphology test results, 518
results and discussion, 516–520
transfer characteristics, 516
flow, 512
Printed TFTs fabrication, 510
Printing fabrication technology, 510; see also Polyimide film (PI film)
Ag dot patterns printed on PI surfaces, 513
CNT random network channel, 514–515
C–V characteristics of PI films, 514
device fabrication flow, 510–512
I–V characteristics of PI films, 514
Kaelble’s model, 512
surface treatment methods, 514
wettability, 512
Printing technology and CNTs, 509, 520; see also Printed CNT transistors; Printing fabrication technology
CNT ink preparation, 510
CNT random network channel, 514–515
printed TFTs fabrication, 510
Probability density function (PDF), 592
Probability of correct logical output (PCLO), 258–259
for room temperature operation, 263
Process variation effect (PVE), 27
Product of sums (POS), 572
Propylene carbonate (PC), 448
Prostate-specific antigen (PSA), 656
Protic solvents, 448
PS, see Porous silicon (PS)
PSA, see Prostate-specific antigen (PSA)
PSLG, see Planar single-layer graphene (PSLG)
PSRR, see Power supply rejection ratio (PSRR)
PSS, see Poly (sodium 4-styrenesulfonate) (PSS)
PT, see Parallel tube (PT); Polythiophene (PT)
PTM, see Predictive technology model (PTM)
P to AP switching, 850; see also Spin-transfer torque random access memory (STT-RAM)
at −0.4 V applied to free layer, 851
in in-plane CoFeB/MgO/CoFeB MTJ, 854
p-type metal-oxide-semiconductor (PMOS), 47, 330, 536
Pulse frequencies, 644
Pulsed deposition processes, 642
Pulsed laser deposition (PLD), 686
PVCCS, see Polynomial VCCS (PVCCS)
PVE, see Process variation effect (PVE)
PyBA, see 1-Pyrenebutyric acid (PyBA)
1-Pyrenebutyric acid (PyBA), 661
Q
QCA, see Quantum-dot cellular automata (QCA)
QCADesigner, 226
QCMs, see Quartz crystal microbalances (QCMs)
QDMs, see Quantum dot molecules (QDMs)
QDs, see Quantum dots (QDs)
QPCs, see Quantum point contacts (QPCs)
Quantum
conductance unit, 869
effects, 717
information processing, 835
mechanical software packages, 874
tunneling, 792
Quantum bits (Qubits), 835
Quantum-dot cellular automata (QCA), 225, 226, 239, 266; see also Interconnects; Magnetic Quantum-Dot Cellular Automata (MQCA); Minimal majority gate mapping; Restoring divider
alternate computing structures, 255
challenge of room temperature electric, 256
circuit design guidelines, 245
circuit unit for, 267
clock, 269
clock signals, 242
as clock zones, 242
coplanar wire crossings, 242, 243
functional paradigm, 227
inverters in, 241
logic gates in, 240
magnetization direction, 227
majority logic for, 268
molecule deposition of required size scale, 256–257
QCADesigner, 226
single nanometer-sized molecules, 256
3-input majority gate in, 342
traditional QCA logic design, 260
wire with clock zones, 242
Quantum dot molecules (QDMs), 835
anisotropic electron–hole exchange interaction, 835
band edge diagram, 839
direct band gap semiconductor, 836
electron–hole exchange interaction, 837
embedded in Schottky diode structure, 839
n-doped, 840
optical excitation of, 837
spins in, 835
Quantum dots (QDs), 836
Quantum-mechanical device modeling, 871; see also Atomic-scale modeling of nanoscale devices
basic ingredients, 871
boundary conditions, 875
Dirichlet boundary conditions, 875
electronic structure methods, 872–874
electrostatics, 874
multigrid method, 875
self-consistent electrostatic potential, 875
Quantum point contacts (QPCs), 827; see also Side-gated QPC conductance anomalies
configuration in numerical simulations, 828
Quartz crystal microbalances (QCMs), 629
Quasi-1D
systems, 655
Qubits, see Quantum bits (Qubits)